Star-Hspice Quick Reference Guide

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Diodes Name (Alias) Unit Default Description JSGGR Am -2 1.0E-3 Gate edge saturation current due to electron hole JSDGR Am -2 1.0E-3 Gate edge saturation current due to back contact NB 1.0 Emission coefficient of bottom forward current NS 1.0 Emission coefficient of sidewall forward current NG 1.0 Emission coefficient of gate edge forward current VB V 0.9 Reverse breakdown voltage CJBR Fm -2 1.0E-12 Bottom junction capacitance CJSR Fm -2 1.0E-12 Sidewall junction capacitance CJGR Fm -2 1.0E-12 Gate edge junction capacitance VDBR V 1.00 Diffusion voltage of bottom junction 6-10 Star-Hspice Quick Reference Guide
Junction Cap Model Name (Alias) Unit Default Description VDSR V 1.00 Diffusion voltage of sidewall junction VDGR V 1.00 Diffusion voltage of gate edge junction PB 0.40 Bottom junction grading coefficient PS 0.40 Sidewall junction grading coefficient PG 0.40 Gate edge junction grading coefficient See “Juncap Model Parameters” in the Star-Hspice manual. Metal and Poly Parameters Level 3 Name (Alias) Unit Default Description LM m 0.0 Default length of metal LP m 0.0 Default length of polysilicon. WM m 0.0 Default width of metal. WP m 0.0 Default width of polysilicon. XM m 0.0 Accounts for masking and etching effects in metal layer. Star-Hspice Quick Reference Guide 6-11
Page 1 and 2: Star-Hspice Quick Reference Guide R
Page 3 and 4: AGREEMENT WITH AVANT! CORPORATION O
Page 5 and 6: 1- Chapter 1 Introduction This Quic
Page 7 and 8: Input and Output Files Input and Ou
Page 9 and 10: .PARAMETER .END Input and Output Fi
Page 11 and 12: Input and Output Files tnom vt(t) v
Page 13 and 14: 2- Chapter 2 Discrete Device Librar
Page 15 and 16: 3- Chapter 3 Passive Devices and In
Page 17 and 18: n1 n2 R Rxxx SCALE TC1 TC2 user-def
Page 19 and 20: Capacitors M W L DTEMP C=‘equatio
Page 21 and 22: IC L=inductance L=‘equation’ LT
Page 23 and 24: Independent Source Element Lzzz Nam
Page 25 and 26: Pulse Source Function General Form
Page 27 and 28: Single-Frequency FM Source Function
Page 29 and 30: Independent Sources TIME tr v1 v2
Page 31 and 32: 4- Chapter 4 Transmission Lines Sta
Page 33 and 34: 5- Chapter 5 IBIS Conventions The t
Page 35 and 36: Buffers + [interpol={1|2}] + [ramp_
Page 37 and 38: Buffers I/O Open Drain, I/O Open Si
Page 39 and 40: Differential Pins + [buffer={13|io_
Page 41 and 42: 6- Chapter 6 Diodes The topics cove
Page 43 and 44: Junction Model Statement WP Width o
Page 45 and 46: Junction Model Parameters Name (Ali
Page 47 and 48: Junction Cap Model nodeplus nminus
Page 49: Junction Cap Model Name (Alias) Uni
Page 53 and 54: Temperature Effects Temperature Eff
Page 55 and 56: Fowler-Nordheim Diode Name (Alias)
Page 57 and 58: Fowler-Nordheim Diode Name (Alias)
Page 59 and 60: 7- Chapter 7 BJT Element The topics
Page 61 and 62: BJT Model Parameters mname NPN pnam
Page 63 and 64: BJT Model Parameters Low-Current Be
Page 65 and 66: See “Using Parasitic Resistance P
Page 67 and 68: BJT Model Parameters Transit Time P
Page 69 and 70: LEVEL 6 Philips Bipolar Model LEVEL
Page 71 and 72: LEVEL 6 Philips Bipolar Model Param
Page 77 and 78: LEVEL 6 Philips Bipolar Model Flags
Page 79 and 80: Avalanche Model Parameters - Level
Page 81 and 82: Base-Emitter Capacitances - Level 5
Page 83 and 84: Transit Time Parameters - Level 504
Page 85 and 86: LEVEL 6 Philips Bipolar Model Noise
Page 87 and 88: LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
Page 89 and 90: LEVEL 8 HiCUM Model BE Depletion Ca
Page 91 and 92: LEVEL 8 HiCUM Model Critical Curren
Page 93 and 94: LEVEL 8 HiCUM Model Parameter Unit
Page 95 and 96: LEVEL 8 HiCUM Model BE Tunneling Pa
Page 97 and 98: LEVEL 8 HiCUM Model Substrate Trans
Page 99 and 100: LEVEL 8 HiCUM Model Parameter Unit
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LEVEL 8 HiCUM Model Parameter Unit
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8- Chapter 8 Elements This chapter
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JFET and MESFET Model Statements JF
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JFET Model Parameters Name (Alias)
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9- Chapter 9 MOSFET Introduction Th
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MOSFET Element Statement RDC RSC W
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MOSFET Element Statement Capacitanc
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MOSFET Element Statement Name (Alia
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Charge Conservation Parameters (CAP
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10- Chapter 10 MOSFET Models This c
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Model Table LEVEL MOSFET Model Desc
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Model Table LEVEL MOSFET Model Desc
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LEVEL 47 BSIM3 Version 2 MOS Model
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LEVELs 49 and 53 BSIM3v3 MOS Models
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LEVEL 54 BSIM 4.0 Model • Since d
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LEVEL 55 EPFL-EKV MOSFET Model LEVE
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LEVEL 57 UC Berkeley BSIM3-SOI Mode
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LEVEL 58 University of Florida SOI
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LEVEL 59 UC Berkeley BSIM3-SOI FD M
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LEVEL 60 UC Berkeley BSIM3-SOI DD M
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LEVEL 62 RPI Poli-Si TFT Model •
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11- Chapter 11 Behavior Macromodeli
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G Elements Voltage Controlled Curre
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Voltage and Current Controlled Elem
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F Element Parameters Voltage and Cu
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12- Chapter 12 Controlling Input Th
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General Control Options Option NOEL
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General Control Options Interface O
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General Control Options Error Optio
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Model Analysis Options Option DEFNR
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Model Analysis Options Option RELMO
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Model Analysis Options Option DCSTE
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Model Analysis Options Option PZTOL
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Model Analysis Options Option RELTO
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Model Analysis Options Option RELVA
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Statements Statements Star-Hspice s
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Statements pnami colnum fileout pva
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Statements elname Element name that
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.LIB Library File Definition Statem
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Statements VERSION Star-Hspice vers
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.TITLE Statement See “Title of Si
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13- Chapter 13 Analyzing Data You c
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DC Analysis incr1 … MODEL MONTE=v
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AC Analysis See “.TF Statement
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stop SWEEP TEMP type var .DISTO Sta
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Small-Signal Network Analysis .NET
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Double-Point Analysis General Form
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tstop1… type UIC var FFT Analysis
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Worst Case Analysis Numerical Integ
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Worst Case Analysis AC Sweep Genera
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14- Chapter 14 Optimizing Data This
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.MODEL Statement Syntax General For
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Laplace Transforms Voltage Gain H(s
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15- Chapter 15 Output Format The to
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Graphing Results in AvanWaves Setup
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Print Commands Graph Commands A, D
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See “.GRAPH Statement” in the S
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Print Commands Target General Form
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Print Commands out_var result TO WE
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Print Commands YMAX If the absolute
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DC and Transient Output out_var(1,2
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AC Analysis Output AC Analysis Outp
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Element Template Output ZIN ZOUT In
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Element Template Listings Name Alia
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Element Template Listings Independe
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Star-Hspice Quick Reference Guide

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