Star-Hspice Quick Reference Guide

MOSFET Models
channel effect defined by LRSCE (and NBH or NHALO);
the latter effect is also turned off when WKF is specified.
• For floating-body devices, set CGFBO=0.
• JRO and SEFF influence the gain of the BJT, but LDIFF
affects only bipolar charge storage in the source/drain. The
BJT gain is influenced by NBH and NHALO (if THALO is
specified) as well.
• The (non-local) impact-ionization model is physical, and its
parameters should not be varied arbitrarily.
• The LDD option intensifies the model; set LLDD=0 for
large-scale circuit simulation, and add the unbiased LDD
resistance to RD. This simplification will stop if NLDD >
1e19.
LEVEL 59 UC Berkeley BSIM3-SOI FD Model
General Form Mxxx nd ng ns ne mname
+
+
+
+
+
AD
Drain diffusion area
AS
Source diffusion area
BJTOFF Turning off BJT if equal to 1
CTH0 Thermal capacitance per unit width
IC
Initial guess in the order
10-24 Star-Hspice Quick Reference Guide