Star-Hspice Quick Reference Guide

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Analyzing Data .NOISE Statement—AC Noise Analysis General Form .NOISE ovv srcnam inter inter Interval at which a noise analysis summary is to be printed; inter specifies a number of frequency points summary in the AC sweep. ovv Nodal voltage output variable defining the node at which the noise is summed. srcnam Name of the independent voltage or current source used as the noise input reference. See “.NOISE Statement — AC Noise Analysis” in the Star-Hspice Manual. .SAMPLE Statement—Noise Folding Analysis General Form BETA FS = freq MAXFLD NUMF TOL .SAMPLE FS = freq + + Integrator duty cycle; specifies an optional noise integrator at the sampling node. Sample frequency, in Hertz. Maximum allowed number of folding intervals. Maximum allowed number of userspecified frequencies. Sampling error tolerance. See “.SAMPLE Statement — Noise Folding Analysis” in the Star-Hspice Manual. 13-8 Star-Hspice Quick Reference Guide
Small-Signal Network Analysis .NET Statement—AC Network Analysis One-port network General Form .NET input Or .NET input Two-port network General Form input output RIN ROUT Small-Signal Network Analysis .NET output input + AC input voltage or current source name. Output port. Input or source resistance keyword. Output or load resistance keyword. See “.NET Statement - AC Network Analysis” in the Star-Hspice Manual. AC Network Analysis—Output Specification General Form Xij(z), ZIN(z), ZOUT(z), YIN(z), YOUT(z) ij Identifies which matrix parameter to print. X Specifies Z for impedance, Y for admittance, H for hybrid, and S for scattering. YIN Input admittance. YOUT Output admittance. Star-Hspice Quick Reference Guide 13-9
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Star-Hspice Quick Reference Guide R
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AGREEMENT WITH AVANT! CORPORATION O
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1- Chapter 1 Introduction This Quic
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Input and Output Files Input and Ou
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.PARAMETER .END Input and Output Fi
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Input and Output Files tnom vt(t) v
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2- Chapter 2 Discrete Device Librar
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3- Chapter 3 Passive Devices and In
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n1 n2 R Rxxx SCALE TC1 TC2 user-def
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Capacitors M W L DTEMP C=‘equatio
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IC L=inductance L=‘equation’ LT
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Independent Source Element Lzzz Nam
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Pulse Source Function General Form
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Single-Frequency FM Source Function
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Independent Sources TIME tr v1 v2
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4- Chapter 4 Transmission Lines Sta
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5- Chapter 5 IBIS Conventions The t
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Buffers + [interpol={1|2}] + [ramp_
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Buffers I/O Open Drain, I/O Open Si
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Differential Pins + [buffer={13|io_
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6- Chapter 6 Diodes The topics cove
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Junction Model Statement WP Width o
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Junction Model Parameters Name (Ali
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Junction Cap Model nodeplus nminus
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Junction Cap Model Name (Alias) Uni
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Junction Cap Model Name (Alias) Uni
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Temperature Effects Temperature Eff
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Fowler-Nordheim Diode Name (Alias)
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Fowler-Nordheim Diode Name (Alias)
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7- Chapter 7 BJT Element The topics
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BJT Model Parameters mname NPN pnam
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BJT Model Parameters Low-Current Be
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See “Using Parasitic Resistance P
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BJT Model Parameters Transit Time P
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LEVEL 6 Philips Bipolar Model LEVEL
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LEVEL 6 Philips Bipolar Model Param
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LEVEL 6 Philips Bipolar Model Flags
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Avalanche Model Parameters - Level
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Base-Emitter Capacitances - Level 5
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Transit Time Parameters - Level 504
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LEVEL 6 Philips Bipolar Model Noise
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LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
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LEVEL 8 HiCUM Model BE Depletion Ca
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LEVEL 8 HiCUM Model Critical Curren
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LEVEL 8 HiCUM Model Parameter Unit
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LEVEL 8 HiCUM Model BE Tunneling Pa
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LEVEL 8 HiCUM Model Substrate Trans
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8- Chapter 8 Elements This chapter
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JFET and MESFET Model Statements JF
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JFET Model Parameters Name (Alias)
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9- Chapter 9 MOSFET Introduction Th
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MOSFET Element Statement RDC RSC W
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MOSFET Element Statement Capacitanc
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MOSFET Element Statement Name (Alia
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Charge Conservation Parameters (CAP
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10- Chapter 10 MOSFET Models This c
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Model Table LEVEL MOSFET Model Desc
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Model Table LEVEL MOSFET Model Desc
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LEVEL 47 BSIM3 Version 2 MOS Model
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LEVELs 49 and 53 BSIM3v3 MOS Models
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LEVEL 54 BSIM 4.0 Model • Since d
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LEVEL 55 EPFL-EKV MOSFET Model LEVE
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LEVEL 57 UC Berkeley BSIM3-SOI Mode
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LEVEL 58 University of Florida SOI
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LEVEL 59 UC Berkeley BSIM3-SOI FD M
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LEVEL 60 UC Berkeley BSIM3-SOI DD M
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LEVEL 62 RPI Poli-Si TFT Model •
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11- Chapter 11 Behavior Macromodeli
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G Elements Voltage Controlled Curre
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Voltage and Current Controlled Elem
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Page 171 and 172: F Element Parameters Voltage and Cu
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Page 179 and 180: General Control Options Option NOEL
Page 181 and 182: General Control Options Interface O
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Page 185 and 186: Model Analysis Options Option DEFNR
Page 187 and 188: Model Analysis Options Option RELMO
Page 189 and 190: Model Analysis Options Option DCSTE
Page 191 and 192: Model Analysis Options Option PZTOL
Page 193 and 194: Model Analysis Options Option RELTO
Page 195 and 196: Model Analysis Options Option RELVA
Page 197 and 198: Statements Statements Star-Hspice s
Page 199 and 200: Statements pnami colnum fileout pva
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Page 203 and 204: .LIB Library File Definition Statem
Page 205 and 206: Statements VERSION Star-Hspice vers
Page 207 and 208: .TITLE Statement See “Title of Si
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Page 211 and 212: DC Analysis incr1 … MODEL MONTE=v
Page 213 and 214: AC Analysis See “.TF Statement
Page 215: stop SWEEP TEMP type var .DISTO Sta
Page 219 and 220: Double-Point Analysis General Form
Page 221 and 222: tstop1… type UIC var FFT Analysis
Page 223 and 224: Worst Case Analysis Numerical Integ
Page 225 and 226: Worst Case Analysis AC Sweep Genera
Page 227 and 228: 14- Chapter 14 Optimizing Data This
Page 229 and 230: .MODEL Statement Syntax General For
Page 231 and 232: Laplace Transforms Voltage Gain H(s
Page 233 and 234: 15- Chapter 15 Output Format The to
Page 235 and 236: Graphing Results in AvanWaves Setup
Page 237 and 238: Print Commands Graph Commands A, D
Page 239 and 240: See “.GRAPH Statement” in the S
Page 241 and 242: Print Commands Target General Form
Page 243 and 244: Print Commands out_var result TO WE
Page 245 and 246: Print Commands YMAX If the absolute
Page 247 and 248: DC and Transient Output out_var(1,2
Page 249 and 250: AC Analysis Output AC Analysis Outp
Page 251 and 252: Element Template Output ZIN ZOUT In
Page 253 and 254: Element Template Listings Name Alia
Page 255 and 256: Element Template Listings Independe
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