Star-Hspice Quick Reference Guide

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Passive Devices and Independent Sources AC AC source keyword for use in AC smallsignal analysis. acmag Magnitude (RMS) of the AC source in volts. acphase Phase of the AC source in degrees. DC=dcval DC source keyword and value in volts. Iyyy Independent current source element name. M Multiplier used for simulating multiple parallel current sources. n+ Positive node. n- Negative node. tranfun Transient source function (one or more of: AM, DC, EXP, PE, PL, PU, PULSE, PWL, SFFM, SIN). Vxxx Independent voltage source element name. See “Independent Source Element” in the Star-Hspice Manual. Independent Sources All arguments for the sources in this section follow “Amplitude Modulation Source Function” on pages 3-13. 3-10 Star-Hspice Quick Reference Guide
Pulse Source Function General Form Or Independent Sources Vxxx n+ n- PU v1 v2 Ixxx n+ n- PU v1 v2 See “Pulse Source Function” in the Star-Hspice Manual. Sinusoidal Source Function General Form Vxxx n+ n- SIN vo va Or Ixxx n+ n- SIN vo va See “Sinusoidal Source Function” in the Star-Hspice Manual. Exponential Source Function General Form Or Vxxx n+ n- EXP v1 v2 Ixxx n+ n- EXP v1 v2 See “Exponential Source Function” in the Star-Hspice Manual. Star-Hspice Quick Reference Guide 3-11
Page 1 and 2: Star-Hspice Quick Reference Guide R
Page 3 and 4: AGREEMENT WITH AVANT! CORPORATION O
Page 5 and 6: 1- Chapter 1 Introduction This Quic
Page 7 and 8: Input and Output Files Input and Ou
Page 9 and 10: .PARAMETER .END Input and Output Fi
Page 11 and 12: Input and Output Files tnom vt(t) v
Page 13 and 14: 2- Chapter 2 Discrete Device Librar
Page 15 and 16: 3- Chapter 3 Passive Devices and In
Page 17 and 18: n1 n2 R Rxxx SCALE TC1 TC2 user-def
Page 19 and 20: Capacitors M W L DTEMP C=‘equatio
Page 21 and 22: IC L=inductance L=‘equation’ LT
Page 23: Independent Source Element Lzzz Nam
Page 27 and 28: Single-Frequency FM Source Function
Page 29 and 30: Independent Sources TIME tr v1 v2
Page 31 and 32: 4- Chapter 4 Transmission Lines Sta
Page 33 and 34: 5- Chapter 5 IBIS Conventions The t
Page 35 and 36: Buffers + [interpol={1|2}] + [ramp_
Page 37 and 38: Buffers I/O Open Drain, I/O Open Si
Page 39 and 40: Differential Pins + [buffer={13|io_
Page 41 and 42: 6- Chapter 6 Diodes The topics cove
Page 43 and 44: Junction Model Statement WP Width o
Page 45 and 46: Junction Model Parameters Name (Ali
Page 47 and 48: Junction Cap Model nodeplus nminus
Page 49 and 50: Junction Cap Model Name (Alias) Uni
Page 51 and 52: Junction Cap Model Name (Alias) Uni
Page 53 and 54: Temperature Effects Temperature Eff
Page 55 and 56: Fowler-Nordheim Diode Name (Alias)
Page 57 and 58: Fowler-Nordheim Diode Name (Alias)
Page 59 and 60: 7- Chapter 7 BJT Element The topics
Page 61 and 62: BJT Model Parameters mname NPN pnam
Page 63 and 64: BJT Model Parameters Low-Current Be
Page 65 and 66: See “Using Parasitic Resistance P
Page 67 and 68: BJT Model Parameters Transit Time P
Page 69 and 70: LEVEL 6 Philips Bipolar Model LEVEL
Page 71 and 72: LEVEL 6 Philips Bipolar Model Param
Page 73 and 74: LEVEL 6 Philips Bipolar Model Param
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LEVEL 6 Philips Bipolar Model Param
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LEVEL 6 Philips Bipolar Model Flags
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Avalanche Model Parameters - Level
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Base-Emitter Capacitances - Level 5
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Transit Time Parameters - Level 504
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LEVEL 6 Philips Bipolar Model Noise
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LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
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LEVEL 8 HiCUM Model BE Depletion Ca
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LEVEL 8 HiCUM Model Critical Curren
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LEVEL 8 HiCUM Model Parameter Unit
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LEVEL 8 HiCUM Model BE Tunneling Pa
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LEVEL 8 HiCUM Model Substrate Trans
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8- Chapter 8 Elements This chapter
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JFET and MESFET Model Statements JF
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JFET Model Parameters Name (Alias)
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9- Chapter 9 MOSFET Introduction Th
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MOSFET Element Statement RDC RSC W
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MOSFET Element Statement Capacitanc
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MOSFET Element Statement Name (Alia
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Charge Conservation Parameters (CAP
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10- Chapter 10 MOSFET Models This c
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Model Table LEVEL MOSFET Model Desc
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Model Table LEVEL MOSFET Model Desc
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LEVEL 47 BSIM3 Version 2 MOS Model
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LEVELs 49 and 53 BSIM3v3 MOS Models
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LEVEL 54 BSIM 4.0 Model • Since d
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LEVEL 55 EPFL-EKV MOSFET Model LEVE
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LEVEL 57 UC Berkeley BSIM3-SOI Mode
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LEVEL 58 University of Florida SOI
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LEVEL 59 UC Berkeley BSIM3-SOI FD M
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LEVEL 60 UC Berkeley BSIM3-SOI DD M
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LEVEL 62 RPI Poli-Si TFT Model •
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11- Chapter 11 Behavior Macromodeli
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G Elements Voltage Controlled Curre
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Voltage and Current Controlled Elem
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F Element Parameters Voltage and Cu
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12- Chapter 12 Controlling Input Th
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General Control Options Option NOEL
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General Control Options Interface O
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General Control Options Error Optio
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Model Analysis Options Option DEFNR
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Model Analysis Options Option RELMO
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Model Analysis Options Option DCSTE
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Model Analysis Options Option PZTOL
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Model Analysis Options Option RELTO
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Model Analysis Options Option RELVA
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Statements Statements Star-Hspice s
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Statements pnami colnum fileout pva
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Statements elname Element name that
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.LIB Library File Definition Statem
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Statements VERSION Star-Hspice vers
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.TITLE Statement See “Title of Si
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13- Chapter 13 Analyzing Data You c
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DC Analysis incr1 … MODEL MONTE=v
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AC Analysis See “.TF Statement
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stop SWEEP TEMP type var .DISTO Sta
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Small-Signal Network Analysis .NET
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Double-Point Analysis General Form
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tstop1… type UIC var FFT Analysis
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Worst Case Analysis Numerical Integ
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Worst Case Analysis AC Sweep Genera
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14- Chapter 14 Optimizing Data This
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.MODEL Statement Syntax General For
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Laplace Transforms Voltage Gain H(s
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15- Chapter 15 Output Format The to
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Graphing Results in AvanWaves Setup
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Print Commands Graph Commands A, D
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See “.GRAPH Statement” in the S
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Print Commands Target General Form
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Print Commands out_var result TO WE
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Print Commands YMAX If the absolute
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DC and Transient Output out_var(1,2
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AC Analysis Output AC Analysis Outp
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Element Template Output ZIN ZOUT In
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Element Template Listings Name Alia
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Element Template Listings Independe
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