Star-Hspice Quick Reference Guide

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Analyzing Data Type Param Slow Fast PMOS XL + - RSH + - DELVTO - + TOX + - XW - + See “Sigma Deviations” in the Star-Hspice Manual. Monte Carlo Analysis HSPICE statements needed to set up a Monte Carlo analysis are: • .PARAM statement. • .DC, .AC, or .TRAN analysis—enable MONTE. • .MEASURE statement. See “Performing Monte Carlo Analysis” in the Star-Hspice Manual. For details about the syntax for these statements, see “Analysis Syntax” in the Star-Hspice Manual. Operating Point General Form .DC MONTE=val DC Sweep General Form .DC vin 1 5 .25 SWEEP MONTE=val 13-16 Star-Hspice Quick Reference Guide
Worst Case Analysis AC Sweep General Form TRAN Sweep General Form .AC dec 10 100 10meg SWEEP + MONTE=val .TRAN 1n 10n SWEEP MONTE=val .PARAM Distribution Function Syntax General Form Or Or Or Or abs_variation AGAUSS AUNIF GAUSS .PARAM xx=UNIF(nominal_val, + rel_variation ) .PARAM xx=AUNIF(nominal_val, + abs_variation ) .PARAM xx=GAUSS(nominal_val, + rel_variation, sigma ) .PARAM xx=AGAUSS(nominal_val, + abs_variation, sigma ) .PARAM xx=LIMIT(nominal_val, + abs_variation) The AUNIF and AGAUSS vary the nominal_val by +/- abs_variation. Gaussian distribution function using absolute variation. Uniform distribution function using absolute variation. Gaussian distribution function using relative variation. Star-Hspice Quick Reference Guide 13-17
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Star-Hspice Quick Reference Guide R
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AGREEMENT WITH AVANT! CORPORATION O
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1- Chapter 1 Introduction This Quic
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Input and Output Files Input and Ou
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.PARAMETER .END Input and Output Fi
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Input and Output Files tnom vt(t) v
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2- Chapter 2 Discrete Device Librar
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3- Chapter 3 Passive Devices and In
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n1 n2 R Rxxx SCALE TC1 TC2 user-def
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Capacitors M W L DTEMP C=‘equatio
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IC L=inductance L=‘equation’ LT
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Independent Source Element Lzzz Nam
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Pulse Source Function General Form
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Single-Frequency FM Source Function
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Independent Sources TIME tr v1 v2
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4- Chapter 4 Transmission Lines Sta
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5- Chapter 5 IBIS Conventions The t
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Buffers + [interpol={1|2}] + [ramp_
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Buffers I/O Open Drain, I/O Open Si
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Differential Pins + [buffer={13|io_
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6- Chapter 6 Diodes The topics cove
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Junction Model Statement WP Width o
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Junction Model Parameters Name (Ali
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Junction Cap Model nodeplus nminus
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Junction Cap Model Name (Alias) Uni
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Junction Cap Model Name (Alias) Uni
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Temperature Effects Temperature Eff
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Fowler-Nordheim Diode Name (Alias)
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Fowler-Nordheim Diode Name (Alias)
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7- Chapter 7 BJT Element The topics
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BJT Model Parameters mname NPN pnam
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BJT Model Parameters Low-Current Be
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See “Using Parasitic Resistance P
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BJT Model Parameters Transit Time P
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LEVEL 6 Philips Bipolar Model LEVEL
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LEVEL 6 Philips Bipolar Model Param
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LEVEL 6 Philips Bipolar Model Flags
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Avalanche Model Parameters - Level
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Base-Emitter Capacitances - Level 5
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Transit Time Parameters - Level 504
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LEVEL 6 Philips Bipolar Model Noise
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LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
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LEVEL 8 HiCUM Model BE Depletion Ca
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LEVEL 8 HiCUM Model Critical Curren
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LEVEL 8 HiCUM Model Parameter Unit
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LEVEL 8 HiCUM Model BE Tunneling Pa
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LEVEL 8 HiCUM Model Substrate Trans
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8- Chapter 8 Elements This chapter
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JFET and MESFET Model Statements JF
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JFET Model Parameters Name (Alias)
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9- Chapter 9 MOSFET Introduction Th
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MOSFET Element Statement RDC RSC W
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MOSFET Element Statement Capacitanc
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MOSFET Element Statement Name (Alia
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Charge Conservation Parameters (CAP
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10- Chapter 10 MOSFET Models This c
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Model Table LEVEL MOSFET Model Desc
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Model Table LEVEL MOSFET Model Desc
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LEVEL 47 BSIM3 Version 2 MOS Model
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LEVELs 49 and 53 BSIM3v3 MOS Models
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LEVEL 54 BSIM 4.0 Model • Since d
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LEVEL 55 EPFL-EKV MOSFET Model LEVE
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LEVEL 57 UC Berkeley BSIM3-SOI Mode
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LEVEL 58 University of Florida SOI
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LEVEL 59 UC Berkeley BSIM3-SOI FD M
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LEVEL 60 UC Berkeley BSIM3-SOI DD M
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LEVEL 62 RPI Poli-Si TFT Model •
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11- Chapter 11 Behavior Macromodeli
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G Elements Voltage Controlled Curre
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Voltage and Current Controlled Elem
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F Element Parameters Voltage and Cu
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Page 181 and 182: General Control Options Interface O
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Page 187 and 188: Model Analysis Options Option RELMO
Page 189 and 190: Model Analysis Options Option DCSTE
Page 191 and 192: Model Analysis Options Option PZTOL
Page 193 and 194: Model Analysis Options Option RELTO
Page 195 and 196: Model Analysis Options Option RELVA
Page 197 and 198: Statements Statements Star-Hspice s
Page 199 and 200: Statements pnami colnum fileout pva
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Page 211 and 212: DC Analysis incr1 … MODEL MONTE=v
Page 213 and 214: AC Analysis See “.TF Statement
Page 215 and 216: stop SWEEP TEMP type var .DISTO Sta
Page 217 and 218: Small-Signal Network Analysis .NET
Page 219 and 220: Double-Point Analysis General Form
Page 221 and 222: tstop1… type UIC var FFT Analysis
Page 223: Worst Case Analysis Numerical Integ
Page 227 and 228: 14- Chapter 14 Optimizing Data This
Page 229 and 230: .MODEL Statement Syntax General For
Page 231 and 232: Laplace Transforms Voltage Gain H(s
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Page 235 and 236: Graphing Results in AvanWaves Setup
Page 237 and 238: Print Commands Graph Commands A, D
Page 239 and 240: See “.GRAPH Statement” in the S
Page 241 and 242: Print Commands Target General Form
Page 243 and 244: Print Commands out_var result TO WE
Page 245 and 246: Print Commands YMAX If the absolute
Page 247 and 248: DC and Transient Output out_var(1,2
Page 249 and 250: AC Analysis Output AC Analysis Outp
Page 251 and 252: Element Template Output ZIN ZOUT In
Page 253 and 254: Element Template Listings Name Alia
Page 255 and 256: Element Template Listings Independe
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