Star-Hspice Quick Reference Guide

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MOSFET Models nb NBC nd ne ng np NRB NRD NRS ns NSEG nT OFF PD PDBCP PS Internal body node name or number Number of body contact isolation edge Drain terminal node name or number Back gate (or substrate) node name or number Front gate node name or number External body contact node name or number Number of squares for body series resistance Number of squares of drain diffusion for drain series resistance Number of squares of source diffusion for source series resistance Source terminal node name or number Number of segments for channel width partitioning Temperature node name or number Sets initial condition to OFF in DC analysis Perimeter of the drain junction, including the channel edge Parasitic perimeter length for body contact at drain side Perimeter of the source junction, including the channel edge 10-16 Star-Hspice Quick Reference Guide
LEVEL 57 UC Berkeley BSIM3-SOI Model PSBCP RDC RSC RTH0 TNODEOUT VBSUSR W Parasitic perimeter length for body contact at source side Additional drain resistance due to contact resistance with units of ohms Additional source resistance due to contact resistance with units of ohms Thermal resistance per unit width Temperature node flag indicating the use of T node Optional initial value of Vbs specified by user for transient analysis MOSFET channel width in meters The UC Berkeley SOI model (BSIM3 SOI) supports Fully Depleted (FD), Partially Depleted (PD), and Dynamically Depleted (DD) SOI devices, of which BSIM3PD2.0.1 for PD SOI devices is Star-Hspice LEVEL 57. This model is described in the “BSIM3PD2.0 MOSFET MODEL User’s Manual,” which can be found at “http://wwwdevice.eecs.berkeley.edu/~bsim3soi”. Also see “LEVEL 57 UC Berkeley BSIM3-SOI Model” in the Star-Hspice Manual. Using BSIM3-SOI PD in Star-HSPICE • To use PD versions 2.0, 2.2, and 2.21 in Star-Hspice, apply VERSION. For example: - PD2.0 is invoked when VERSION=2.0 - PD2.2 and PD2.21 are invoked when VERSION=2.2 Star-Hspice Quick Reference Guide 10-17
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Star-Hspice Quick Reference Guide R
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AGREEMENT WITH AVANT! CORPORATION O
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1- Chapter 1 Introduction This Quic
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Input and Output Files Input and Ou
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.PARAMETER .END Input and Output Fi
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Input and Output Files tnom vt(t) v
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2- Chapter 2 Discrete Device Librar
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3- Chapter 3 Passive Devices and In
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n1 n2 R Rxxx SCALE TC1 TC2 user-def
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Capacitors M W L DTEMP C=‘equatio
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IC L=inductance L=‘equation’ LT
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Independent Source Element Lzzz Nam
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Pulse Source Function General Form
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Single-Frequency FM Source Function
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Independent Sources TIME tr v1 v2
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4- Chapter 4 Transmission Lines Sta
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5- Chapter 5 IBIS Conventions The t
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Buffers + [interpol={1|2}] + [ramp_
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Buffers I/O Open Drain, I/O Open Si
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Differential Pins + [buffer={13|io_
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6- Chapter 6 Diodes The topics cove
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Junction Model Statement WP Width o
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Junction Model Parameters Name (Ali
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Junction Cap Model nodeplus nminus
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Junction Cap Model Name (Alias) Uni
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Junction Cap Model Name (Alias) Uni
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Temperature Effects Temperature Eff
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Fowler-Nordheim Diode Name (Alias)
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Fowler-Nordheim Diode Name (Alias)
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7- Chapter 7 BJT Element The topics
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BJT Model Parameters mname NPN pnam
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BJT Model Parameters Low-Current Be
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See “Using Parasitic Resistance P
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BJT Model Parameters Transit Time P
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LEVEL 6 Philips Bipolar Model LEVEL
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LEVEL 6 Philips Bipolar Model Param
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LEVEL 6 Philips Bipolar Model Flags
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Avalanche Model Parameters - Level
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Base-Emitter Capacitances - Level 5
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Transit Time Parameters - Level 504
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LEVEL 6 Philips Bipolar Model Noise
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LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
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LEVEL 8 HiCUM Model BE Depletion Ca
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LEVEL 8 HiCUM Model Critical Curren
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Page 95 and 96: LEVEL 8 HiCUM Model BE Tunneling Pa
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Page 103 and 104: 8- Chapter 8 Elements This chapter
Page 105 and 106: JFET and MESFET Model Statements JF
Page 107 and 108: JFET Model Parameters Name (Alias)
Page 113 and 114: 9- Chapter 9 MOSFET Introduction Th
Page 115 and 116: MOSFET Element Statement RDC RSC W
Page 117 and 118: MOSFET Element Statement Capacitanc
Page 119 and 120: MOSFET Element Statement Name (Alia
Page 125 and 126: Charge Conservation Parameters (CAP
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Page 131 and 132: Model Table LEVEL MOSFET Model Desc
Page 133 and 134: Model Table LEVEL MOSFET Model Desc
Page 135 and 136: LEVEL 47 BSIM3 Version 2 MOS Model
Page 137 and 138: LEVELs 49 and 53 BSIM3v3 MOS Models
Page 139 and 140: LEVEL 54 BSIM 4.0 Model • Since d
Page 141 and 142: LEVEL 55 EPFL-EKV MOSFET Model LEVE
Page 143: LEVEL 57 UC Berkeley BSIM3-SOI Mode
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Page 149 and 150: LEVEL 57 UC Berkeley BSIM3-SOI Mode
Page 151 and 152: LEVEL 58 University of Florida SOI
Page 153 and 154: LEVEL 59 UC Berkeley BSIM3-SOI FD M
Page 155 and 156: LEVEL 60 UC Berkeley BSIM3-SOI DD M
Page 157 and 158: LEVEL 62 RPI Poli-Si TFT Model •
Page 159 and 160: 11- Chapter 11 Behavior Macromodeli
Page 161 and 162: G Elements Voltage Controlled Curre
Page 163 and 164: Voltage and Current Controlled Elem
Page 171 and 172: F Element Parameters Voltage and Cu
Page 177 and 178: 12- Chapter 12 Controlling Input Th
Page 179 and 180: General Control Options Option NOEL
Page 181 and 182: General Control Options Interface O
Page 183 and 184: General Control Options Error Optio
Page 185 and 186: Model Analysis Options Option DEFNR
Page 187 and 188: Model Analysis Options Option RELMO
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Model Analysis Options Option RELVA
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Statements Statements Star-Hspice s
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Statements pnami colnum fileout pva
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Statements elname Element name that
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.LIB Library File Definition Statem
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Statements VERSION Star-Hspice vers
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.TITLE Statement See “Title of Si
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13- Chapter 13 Analyzing Data You c
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DC Analysis incr1 … MODEL MONTE=v
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AC Analysis See “.TF Statement
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stop SWEEP TEMP type var .DISTO Sta
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Small-Signal Network Analysis .NET
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Double-Point Analysis General Form
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tstop1… type UIC var FFT Analysis
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Worst Case Analysis Numerical Integ
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Worst Case Analysis AC Sweep Genera
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14- Chapter 14 Optimizing Data This
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.MODEL Statement Syntax General For
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Laplace Transforms Voltage Gain H(s
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15- Chapter 15 Output Format The to
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Graphing Results in AvanWaves Setup
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Print Commands Graph Commands A, D
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See “.GRAPH Statement” in the S
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Print Commands Target General Form
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Print Commands out_var result TO WE
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Print Commands YMAX If the absolute
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DC and Transient Output out_var(1,2
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AC Analysis Output AC Analysis Outp
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Element Template Output ZIN ZOUT In
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Element Template Listings Name Alia
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Element Template Listings Independe
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