Star-Hspice Quick Reference Guide

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Diodes Name (Alias) Unit Default Description IB amp 1.0e-3 Current at breakdown voltage. IBV amp 1.0e-3 Current at breakdown voltage. IK (IKF, JBF) IKR (JBR) IS (JS) amp/ AREAeff amp/ AREAeff amp/ AREAeff 0.0 Forward knee current. 0.0 Reverse knee current. 1.0e-14 Saturation current per unit area. JSW (ISP) amp/PJeff 0.0 Sidewall saturation current per unit junction periphery. L - - Default length of diode. LEVEL - 1 Diode model selector. N - 1.0 Emission coefficient PJ - 0.0 Junction periphery RS ohms or ohms/m 2 0.0 Ohmic series resistance. SHRINK - 1.0 Shrink factor. 6-4 Star-Hspice Quick Reference Guide
Junction Model Parameters Name (Alias) Unit Default Description VB (BV, VAR, VRB) V 0.0 Reverse breakdown voltage. W - - Default width of diode XW - - Accounts for masking and etching effects. See “Using Junction Model Parameters” in the Star-Hspice Manual. Junction Capacitance Parameters Name (Alias) Unit Default Description CJ (CJA, CJO) CJP (CJSW) F/ AREAeff 0.0 Zero-bias bottomwall capacitance F/PJeff 0.0 Zero-bias periphery capacitance FC - 0.5 Coefficient for forward-bias depletion area capacitance formula FCS - 0.5 Coefficient for forward-bias depletion periphery capacitance formula Star-Hspice Quick Reference Guide 6-5
Page 1 and 2: Star-Hspice Quick Reference Guide R
Page 3 and 4: AGREEMENT WITH AVANT! CORPORATION O
Page 5 and 6: 1- Chapter 1 Introduction This Quic
Page 7 and 8: Input and Output Files Input and Ou
Page 9 and 10: .PARAMETER .END Input and Output Fi
Page 11 and 12: Input and Output Files tnom vt(t) v
Page 13 and 14: 2- Chapter 2 Discrete Device Librar
Page 15 and 16: 3- Chapter 3 Passive Devices and In
Page 17 and 18: n1 n2 R Rxxx SCALE TC1 TC2 user-def
Page 19 and 20: Capacitors M W L DTEMP C=‘equatio
Page 21 and 22: IC L=inductance L=‘equation’ LT
Page 23 and 24: Independent Source Element Lzzz Nam
Page 25 and 26: Pulse Source Function General Form
Page 27 and 28: Single-Frequency FM Source Function
Page 29 and 30: Independent Sources TIME tr v1 v2
Page 31 and 32: 4- Chapter 4 Transmission Lines Sta
Page 33 and 34: 5- Chapter 5 IBIS Conventions The t
Page 35 and 36: Buffers + [interpol={1|2}] + [ramp_
Page 37 and 38: Buffers I/O Open Drain, I/O Open Si
Page 39 and 40: Differential Pins + [buffer={13|io_
Page 41 and 42: 6- Chapter 6 Diodes The topics cove
Page 43: Junction Model Statement WP Width o
Page 47 and 48: Junction Cap Model nodeplus nminus
Page 49 and 50: Junction Cap Model Name (Alias) Uni
Page 51 and 52: Junction Cap Model Name (Alias) Uni
Page 53 and 54: Temperature Effects Temperature Eff
Page 55 and 56: Fowler-Nordheim Diode Name (Alias)
Page 57 and 58: Fowler-Nordheim Diode Name (Alias)
Page 59 and 60: 7- Chapter 7 BJT Element The topics
Page 61 and 62: BJT Model Parameters mname NPN pnam
Page 63 and 64: BJT Model Parameters Low-Current Be
Page 65 and 66: See “Using Parasitic Resistance P
Page 67 and 68: BJT Model Parameters Transit Time P
Page 69 and 70: LEVEL 6 Philips Bipolar Model LEVEL
Page 71 and 72: LEVEL 6 Philips Bipolar Model Param
Page 77 and 78: LEVEL 6 Philips Bipolar Model Flags
Page 79 and 80: Avalanche Model Parameters - Level
Page 81 and 82: Base-Emitter Capacitances - Level 5
Page 83 and 84: Transit Time Parameters - Level 504
Page 85 and 86: LEVEL 6 Philips Bipolar Model Noise
Page 87 and 88: LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
Page 89 and 90: LEVEL 8 HiCUM Model BE Depletion Ca
Page 91 and 92: LEVEL 8 HiCUM Model Critical Curren
Page 93 and 94: LEVEL 8 HiCUM Model Parameter Unit
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LEVEL 8 HiCUM Model BE Tunneling Pa
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LEVEL 8 HiCUM Model Substrate Trans
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LEVEL 8 HiCUM Model Parameter Unit
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LEVEL 8 HiCUM Model Parameter Unit
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8- Chapter 8 Elements This chapter
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JFET and MESFET Model Statements JF
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JFET Model Parameters Name (Alias)
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9- Chapter 9 MOSFET Introduction Th
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MOSFET Element Statement RDC RSC W
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MOSFET Element Statement Capacitanc
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MOSFET Element Statement Name (Alia
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Charge Conservation Parameters (CAP
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10- Chapter 10 MOSFET Models This c
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Model Table LEVEL MOSFET Model Desc
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Model Table LEVEL MOSFET Model Desc
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LEVEL 47 BSIM3 Version 2 MOS Model
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LEVELs 49 and 53 BSIM3v3 MOS Models
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LEVEL 54 BSIM 4.0 Model • Since d
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LEVEL 55 EPFL-EKV MOSFET Model LEVE
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LEVEL 57 UC Berkeley BSIM3-SOI Mode
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LEVEL 58 University of Florida SOI
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LEVEL 59 UC Berkeley BSIM3-SOI FD M
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LEVEL 60 UC Berkeley BSIM3-SOI DD M
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LEVEL 62 RPI Poli-Si TFT Model •
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11- Chapter 11 Behavior Macromodeli
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G Elements Voltage Controlled Curre
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Voltage and Current Controlled Elem
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F Element Parameters Voltage and Cu
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12- Chapter 12 Controlling Input Th
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General Control Options Option NOEL
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General Control Options Interface O
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General Control Options Error Optio
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Model Analysis Options Option DEFNR
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Model Analysis Options Option RELMO
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Model Analysis Options Option DCSTE
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Model Analysis Options Option PZTOL
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Model Analysis Options Option RELTO
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Model Analysis Options Option RELVA
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Statements Statements Star-Hspice s
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Statements pnami colnum fileout pva
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Statements elname Element name that
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.LIB Library File Definition Statem
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Statements VERSION Star-Hspice vers
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.TITLE Statement See “Title of Si
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13- Chapter 13 Analyzing Data You c
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DC Analysis incr1 … MODEL MONTE=v
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AC Analysis See “.TF Statement
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stop SWEEP TEMP type var .DISTO Sta
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Small-Signal Network Analysis .NET
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Double-Point Analysis General Form
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tstop1… type UIC var FFT Analysis
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Worst Case Analysis Numerical Integ
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Worst Case Analysis AC Sweep Genera
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14- Chapter 14 Optimizing Data This
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.MODEL Statement Syntax General For
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Laplace Transforms Voltage Gain H(s
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15- Chapter 15 Output Format The to
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Graphing Results in AvanWaves Setup
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Print Commands Graph Commands A, D
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See “.GRAPH Statement” in the S
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Print Commands Target General Form
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Print Commands out_var result TO WE
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Print Commands YMAX If the absolute
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DC and Transient Output out_var(1,2
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AC Analysis Output AC Analysis Outp
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Element Template Output ZIN ZOUT In
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Element Template Listings Name Alia
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Element Template Listings Independe
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