Star-Hspice Quick Reference Guide

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Output Format Name Alias Description CDO LX3 Drain current (CDO) CGDO LX4 Gate-to-drain current (CGDO) GMO LX5 Transconductance (GMO) GDSO LX6 Drain-source transconductance (GDSO) GGSO LX7 Gate-source transconductance (GGSO) GGDO LX8 Gate-drain transconductance (GGDO) QGS LX9 Gate-source charge (QGS) CQGS LX10 Gate-source charge current (CQGS) QGD LX11 Gate-drain charge (QGD) CQGD LX12 Gate-drain charge current (CQGD) CAP_GS LX13 Gate-source capacitance CAP_GD LX14 Gate-drain capacitance – LX15 Body-source voltage (not used in Star-Hspice releases after 95.3) QDS LX16 Drain-source charge (QDS) CQDS LX17 Drain-source charge current (CQDS) 15-28 Star-Hspice Quick Reference Guide
Element Template Listings Name Alias Description GMBS LX18 Drain-body (backgate) transconductance (GMBS) MOSFET Name Alias Description L LV1 Channel length (L) W LV2 Channel width (W) AD LV3 Area of the drain diode (AD) AS LV4 Area of the source diode (AS) ICVDS LV5 Initial condition for drainsource voltage (VDS) ICVGS LV6 Initial condition for gate-source voltage (VGS) ICVBS LV7 Initial condition for bulksource voltage (VBS) – LV8 Device polarity: 1 = forward, - 1 = reverse (not used in Star-Hspice releases after 95.3) VTH LV9 Threshold voltage (bias dependent) VDSAT LV10 Saturation voltage (VDSAT) PD LV11 Drain diode periphery (PD) Star-Hspice Quick Reference Guide 15-29
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Star-Hspice Quick Reference Guide R
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AGREEMENT WITH AVANT! CORPORATION O
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1- Chapter 1 Introduction This Quic
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Input and Output Files Input and Ou
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.PARAMETER .END Input and Output Fi
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Input and Output Files tnom vt(t) v
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2- Chapter 2 Discrete Device Librar
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3- Chapter 3 Passive Devices and In
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n1 n2 R Rxxx SCALE TC1 TC2 user-def
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Capacitors M W L DTEMP C=‘equatio
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IC L=inductance L=‘equation’ LT
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Independent Source Element Lzzz Nam
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Pulse Source Function General Form
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Single-Frequency FM Source Function
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Independent Sources TIME tr v1 v2
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4- Chapter 4 Transmission Lines Sta
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5- Chapter 5 IBIS Conventions The t
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Buffers + [interpol={1|2}] + [ramp_
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Buffers I/O Open Drain, I/O Open Si
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Differential Pins + [buffer={13|io_
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6- Chapter 6 Diodes The topics cove
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Junction Model Statement WP Width o
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Junction Model Parameters Name (Ali
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Junction Cap Model nodeplus nminus
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Junction Cap Model Name (Alias) Uni
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Junction Cap Model Name (Alias) Uni
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Temperature Effects Temperature Eff
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Fowler-Nordheim Diode Name (Alias)
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Fowler-Nordheim Diode Name (Alias)
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7- Chapter 7 BJT Element The topics
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BJT Model Parameters mname NPN pnam
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BJT Model Parameters Low-Current Be
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See “Using Parasitic Resistance P
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BJT Model Parameters Transit Time P
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LEVEL 6 Philips Bipolar Model LEVEL
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LEVEL 6 Philips Bipolar Model Param
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LEVEL 6 Philips Bipolar Model Flags
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Avalanche Model Parameters - Level
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Base-Emitter Capacitances - Level 5
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Transit Time Parameters - Level 504
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LEVEL 6 Philips Bipolar Model Noise
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LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
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LEVEL 8 HiCUM Model BE Depletion Ca
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LEVEL 8 HiCUM Model Critical Curren
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LEVEL 8 HiCUM Model Parameter Unit
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LEVEL 8 HiCUM Model BE Tunneling Pa
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LEVEL 8 HiCUM Model Substrate Trans
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8- Chapter 8 Elements This chapter
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JFET and MESFET Model Statements JF
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JFET Model Parameters Name (Alias)
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9- Chapter 9 MOSFET Introduction Th
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MOSFET Element Statement RDC RSC W
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MOSFET Element Statement Capacitanc
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MOSFET Element Statement Name (Alia
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Charge Conservation Parameters (CAP
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10- Chapter 10 MOSFET Models This c
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Model Table LEVEL MOSFET Model Desc
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Model Table LEVEL MOSFET Model Desc
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LEVEL 47 BSIM3 Version 2 MOS Model
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LEVELs 49 and 53 BSIM3v3 MOS Models
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LEVEL 54 BSIM 4.0 Model • Since d
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LEVEL 55 EPFL-EKV MOSFET Model LEVE
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LEVEL 57 UC Berkeley BSIM3-SOI Mode
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LEVEL 58 University of Florida SOI
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LEVEL 59 UC Berkeley BSIM3-SOI FD M
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LEVEL 60 UC Berkeley BSIM3-SOI DD M
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LEVEL 62 RPI Poli-Si TFT Model •
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11- Chapter 11 Behavior Macromodeli
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G Elements Voltage Controlled Curre
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Voltage and Current Controlled Elem
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F Element Parameters Voltage and Cu
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12- Chapter 12 Controlling Input Th
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General Control Options Option NOEL
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General Control Options Interface O
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General Control Options Error Optio
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Model Analysis Options Option DEFNR
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Model Analysis Options Option RELMO
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Model Analysis Options Option DCSTE
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Model Analysis Options Option PZTOL
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Model Analysis Options Option RELTO
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Model Analysis Options Option RELVA
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Statements Statements Star-Hspice s
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Statements pnami colnum fileout pva
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Statements elname Element name that
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.LIB Library File Definition Statem
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Statements VERSION Star-Hspice vers
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.TITLE Statement See “Title of Si
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Page 211 and 212: DC Analysis incr1 … MODEL MONTE=v
Page 213 and 214: AC Analysis See “.TF Statement
Page 215 and 216: stop SWEEP TEMP type var .DISTO Sta
Page 217 and 218: Small-Signal Network Analysis .NET
Page 219 and 220: Double-Point Analysis General Form
Page 221 and 222: tstop1… type UIC var FFT Analysis
Page 223 and 224: Worst Case Analysis Numerical Integ
Page 225 and 226: Worst Case Analysis AC Sweep Genera
Page 227 and 228: 14- Chapter 14 Optimizing Data This
Page 229 and 230: .MODEL Statement Syntax General For
Page 231 and 232: Laplace Transforms Voltage Gain H(s
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Page 235 and 236: Graphing Results in AvanWaves Setup
Page 237 and 238: Print Commands Graph Commands A, D
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Page 241 and 242: Print Commands Target General Form
Page 243 and 244: Print Commands out_var result TO WE
Page 245 and 246: Print Commands YMAX If the absolute
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Page 249 and 250: AC Analysis Output AC Analysis Outp
Page 251 and 252: Element Template Output ZIN ZOUT In
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