Star-Hspice Quick Reference Guide

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Behavior Macromodeling Voltage Controlled Capacitors—VCCAP General Form See “Voltage Controlled Capacitor (VCCAP)” in the Star-Hspice Manual. G Element Parameters Parameter Gxxx n+ n- VCCAP PWL(1) in+ in- + + + x1,y1 x2,y2 ... x100,y100 + Description ABS Output is absolute value if ABS=1. CUR= equation Current output which flows from n+ to n-. DELAY Keyword for the delay element. DELTA Used to control the curvature of the piecewise linear corners. Gxxx Voltage controlled element name. gatetype(k) May be AND, NAND, OR, or NOR. IC Initial condition. in +/- Positive or negative controlling nodes. M Number of replications of the element in parallel. MAX Maximum current or resistance value. MIN Minimum current or resistance value. 11-6 Star-Hspice Quick Reference Guide
Voltage and Current Controlled Elements Parameter Description n+/- Positive or negative node of controlled element. NPDELAY Sets the number of data points to be used in delay simulations. NPWL Models the symmetrical bidirectional switch or transfer gate, NMOS. p0, p1 … Polynomial coefficients. POLY Polynomial dimension. PWL Piecewise linear function keyword. PPWL Models the symmetrical bidirectional switch or transfer gate, PMOS. SCALE Element value multiplier. SMOOTH For piecewise linear dependent source elements, SMOOTH selects the curve smoothing method. TC1,TC2 First-order and second-order temperature coefficients. TD Time delay keyword. transconductance Voltage to current conversion factor. transfactor Voltage to resistance conversion factor. VCCAP Keyword for voltage controlled capacitance element. Star-Hspice Quick Reference Guide 11-7
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Star-Hspice Quick Reference Guide R
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AGREEMENT WITH AVANT! CORPORATION O
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1- Chapter 1 Introduction This Quic
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Input and Output Files Input and Ou
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.PARAMETER .END Input and Output Fi
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Input and Output Files tnom vt(t) v
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2- Chapter 2 Discrete Device Librar
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3- Chapter 3 Passive Devices and In
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n1 n2 R Rxxx SCALE TC1 TC2 user-def
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Capacitors M W L DTEMP C=‘equatio
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IC L=inductance L=‘equation’ LT
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Independent Source Element Lzzz Nam
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Pulse Source Function General Form
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Single-Frequency FM Source Function
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Independent Sources TIME tr v1 v2
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4- Chapter 4 Transmission Lines Sta
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5- Chapter 5 IBIS Conventions The t
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Buffers + [interpol={1|2}] + [ramp_
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Buffers I/O Open Drain, I/O Open Si
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Differential Pins + [buffer={13|io_
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6- Chapter 6 Diodes The topics cove
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Junction Model Statement WP Width o
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Junction Model Parameters Name (Ali
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Junction Cap Model nodeplus nminus
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Junction Cap Model Name (Alias) Uni
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Junction Cap Model Name (Alias) Uni
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Temperature Effects Temperature Eff
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Fowler-Nordheim Diode Name (Alias)
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Fowler-Nordheim Diode Name (Alias)
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7- Chapter 7 BJT Element The topics
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BJT Model Parameters mname NPN pnam
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BJT Model Parameters Low-Current Be
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See “Using Parasitic Resistance P
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BJT Model Parameters Transit Time P
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LEVEL 6 Philips Bipolar Model LEVEL
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LEVEL 6 Philips Bipolar Model Param
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LEVEL 6 Philips Bipolar Model Flags
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Avalanche Model Parameters - Level
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Base-Emitter Capacitances - Level 5
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Transit Time Parameters - Level 504
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LEVEL 6 Philips Bipolar Model Noise
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LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
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LEVEL 8 HiCUM Model BE Depletion Ca
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LEVEL 8 HiCUM Model Critical Curren
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LEVEL 8 HiCUM Model Parameter Unit
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LEVEL 8 HiCUM Model BE Tunneling Pa
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LEVEL 8 HiCUM Model Substrate Trans
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8- Chapter 8 Elements This chapter
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JFET and MESFET Model Statements JF
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JFET Model Parameters Name (Alias)
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Page 113 and 114: 9- Chapter 9 MOSFET Introduction Th
Page 115 and 116: MOSFET Element Statement RDC RSC W
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Page 125 and 126: Charge Conservation Parameters (CAP
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Page 131 and 132: Model Table LEVEL MOSFET Model Desc
Page 133 and 134: Model Table LEVEL MOSFET Model Desc
Page 135 and 136: LEVEL 47 BSIM3 Version 2 MOS Model
Page 137 and 138: LEVELs 49 and 53 BSIM3v3 MOS Models
Page 139 and 140: LEVEL 54 BSIM 4.0 Model • Since d
Page 141 and 142: LEVEL 55 EPFL-EKV MOSFET Model LEVE
Page 143 and 144: LEVEL 57 UC Berkeley BSIM3-SOI Mode
Page 151 and 152: LEVEL 58 University of Florida SOI
Page 153 and 154: LEVEL 59 UC Berkeley BSIM3-SOI FD M
Page 155 and 156: LEVEL 60 UC Berkeley BSIM3-SOI DD M
Page 157 and 158: LEVEL 62 RPI Poli-Si TFT Model •
Page 159 and 160: 11- Chapter 11 Behavior Macromodeli
Page 161 and 162: G Elements Voltage Controlled Curre
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Page 171 and 172: F Element Parameters Voltage and Cu
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Page 179 and 180: General Control Options Option NOEL
Page 181 and 182: General Control Options Interface O
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Page 185 and 186: Model Analysis Options Option DEFNR
Page 187 and 188: Model Analysis Options Option RELMO
Page 189 and 190: Model Analysis Options Option DCSTE
Page 191 and 192: Model Analysis Options Option PZTOL
Page 193 and 194: Model Analysis Options Option RELTO
Page 195 and 196: Model Analysis Options Option RELVA
Page 197 and 198: Statements Statements Star-Hspice s
Page 199 and 200: Statements pnami colnum fileout pva
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Page 205 and 206: Statements VERSION Star-Hspice vers
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Page 211 and 212: DC Analysis incr1 … MODEL MONTE=v
Page 213 and 214: AC Analysis See “.TF Statement
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stop SWEEP TEMP type var .DISTO Sta
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Small-Signal Network Analysis .NET
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Double-Point Analysis General Form
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tstop1… type UIC var FFT Analysis
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Worst Case Analysis Numerical Integ
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Worst Case Analysis AC Sweep Genera
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14- Chapter 14 Optimizing Data This
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.MODEL Statement Syntax General For
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Laplace Transforms Voltage Gain H(s
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15- Chapter 15 Output Format The to
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Graphing Results in AvanWaves Setup
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Print Commands Graph Commands A, D
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See “.GRAPH Statement” in the S
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Print Commands Target General Form
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Print Commands out_var result TO WE
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Print Commands YMAX If the absolute
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DC and Transient Output out_var(1,2
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AC Analysis Output AC Analysis Outp
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Element Template Output ZIN ZOUT In
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Element Template Listings Name Alia
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Element Template Listings Independe
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