Star-Hspice Quick Reference Guide

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Behavior Macromodeling Multi-Input Gates General Form Gxxx n+ n- gatetype(k) in1+ in1- + ... ink+ ink- + + x1,y1 ... x100,y100 Delay Element General Form See “Voltage Controlled Current Source (VCCS)” in the Star-Hspice Manual. Behavioral Current Source General Form See “Behavioral Current Source” in the Star-Hspice Manual. Voltage Controlled Resistor—VCR Linear General Form Gxxx n+ n- DELAY in+ in- + TD=val + NPDELAY=val Gxxx n+ n- CUR=‘equation’ =val> + Gxxx n+ n- VCR in+ in- transfactor + + + 11-4 Star-Hspice Quick Reference Guide
Voltage and Current Controlled Elements Polynomial General Form Gxxx n+ n- VCR POLY(ndim) in1+ in1- ... + + + p0 + Piecewise Linear General Form Gxxx n+ n- VCR PWL(1) in+ in- + + x1,y1 x2,y2 ... + x100,y100 Or Gxxx n+ n- VCR NPWL(1) in+ in- + + x1,y1 x2,y2 ... + x100,y100 Or Gxxx n+ n- VCR PPWL(1) in+ in- + + x1,y1 x2,y2 ... + x100,y100 Multi-Input Gates General Form Gxxx n+ n- VCR gatetype(k) in1+ in1- ... + ink+ ink- + + x1,y1 ... x100,y100 See “Voltage Controlled Resistor (VCR)” in the Star-Hspice Manual. Star-Hspice Quick Reference Guide 11-5
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Star-Hspice Quick Reference Guide R
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AGREEMENT WITH AVANT! CORPORATION O
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1- Chapter 1 Introduction This Quic
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Input and Output Files Input and Ou
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.PARAMETER .END Input and Output Fi
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Input and Output Files tnom vt(t) v
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2- Chapter 2 Discrete Device Librar
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3- Chapter 3 Passive Devices and In
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n1 n2 R Rxxx SCALE TC1 TC2 user-def
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Capacitors M W L DTEMP C=‘equatio
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IC L=inductance L=‘equation’ LT
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Independent Source Element Lzzz Nam
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Pulse Source Function General Form
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Single-Frequency FM Source Function
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Independent Sources TIME tr v1 v2
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4- Chapter 4 Transmission Lines Sta
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5- Chapter 5 IBIS Conventions The t
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Buffers + [interpol={1|2}] + [ramp_
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Buffers I/O Open Drain, I/O Open Si
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Differential Pins + [buffer={13|io_
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6- Chapter 6 Diodes The topics cove
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Junction Model Statement WP Width o
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Junction Model Parameters Name (Ali
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Junction Cap Model nodeplus nminus
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Junction Cap Model Name (Alias) Uni
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Junction Cap Model Name (Alias) Uni
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Temperature Effects Temperature Eff
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Fowler-Nordheim Diode Name (Alias)
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Fowler-Nordheim Diode Name (Alias)
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7- Chapter 7 BJT Element The topics
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BJT Model Parameters mname NPN pnam
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BJT Model Parameters Low-Current Be
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See “Using Parasitic Resistance P
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BJT Model Parameters Transit Time P
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LEVEL 6 Philips Bipolar Model LEVEL
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LEVEL 6 Philips Bipolar Model Param
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LEVEL 6 Philips Bipolar Model Flags
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Avalanche Model Parameters - Level
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Base-Emitter Capacitances - Level 5
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Transit Time Parameters - Level 504
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LEVEL 6 Philips Bipolar Model Noise
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LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
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LEVEL 8 HiCUM Model BE Depletion Ca
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LEVEL 8 HiCUM Model Critical Curren
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LEVEL 8 HiCUM Model Parameter Unit
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LEVEL 8 HiCUM Model BE Tunneling Pa
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LEVEL 8 HiCUM Model Substrate Trans
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8- Chapter 8 Elements This chapter
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JFET and MESFET Model Statements JF
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JFET Model Parameters Name (Alias)
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JFET Model Parameters Name (Alias)
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Page 113 and 114: 9- Chapter 9 MOSFET Introduction Th
Page 115 and 116: MOSFET Element Statement RDC RSC W
Page 117 and 118: MOSFET Element Statement Capacitanc
Page 119 and 120: MOSFET Element Statement Name (Alia
Page 125 and 126: Charge Conservation Parameters (CAP
Page 129 and 130: 10- Chapter 10 MOSFET Models This c
Page 131 and 132: Model Table LEVEL MOSFET Model Desc
Page 133 and 134: Model Table LEVEL MOSFET Model Desc
Page 135 and 136: LEVEL 47 BSIM3 Version 2 MOS Model
Page 137 and 138: LEVELs 49 and 53 BSIM3v3 MOS Models
Page 139 and 140: LEVEL 54 BSIM 4.0 Model • Since d
Page 141 and 142: LEVEL 55 EPFL-EKV MOSFET Model LEVE
Page 143 and 144: LEVEL 57 UC Berkeley BSIM3-SOI Mode
Page 151 and 152: LEVEL 58 University of Florida SOI
Page 153 and 154: LEVEL 59 UC Berkeley BSIM3-SOI FD M
Page 155 and 156: LEVEL 60 UC Berkeley BSIM3-SOI DD M
Page 157 and 158: LEVEL 62 RPI Poli-Si TFT Model •
Page 159 and 160: 11- Chapter 11 Behavior Macromodeli
Page 161: G Elements Voltage Controlled Curre
Page 165 and 166: Voltage and Current Controlled Elem
Page 171 and 172: F Element Parameters Voltage and Cu
Page 177 and 178: 12- Chapter 12 Controlling Input Th
Page 179 and 180: General Control Options Option NOEL
Page 181 and 182: General Control Options Interface O
Page 183 and 184: General Control Options Error Optio
Page 185 and 186: Model Analysis Options Option DEFNR
Page 187 and 188: Model Analysis Options Option RELMO
Page 189 and 190: Model Analysis Options Option DCSTE
Page 191 and 192: Model Analysis Options Option PZTOL
Page 193 and 194: Model Analysis Options Option RELTO
Page 195 and 196: Model Analysis Options Option RELVA
Page 197 and 198: Statements Statements Star-Hspice s
Page 199 and 200: Statements pnami colnum fileout pva
Page 201 and 202: Statements elname Element name that
Page 203 and 204: .LIB Library File Definition Statem
Page 205 and 206: Statements VERSION Star-Hspice vers
Page 207 and 208: .TITLE Statement See “Title of Si
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Page 211 and 212: DC Analysis incr1 … MODEL MONTE=v
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AC Analysis See “.TF Statement
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stop SWEEP TEMP type var .DISTO Sta
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Small-Signal Network Analysis .NET
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Double-Point Analysis General Form
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tstop1… type UIC var FFT Analysis
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Worst Case Analysis Numerical Integ
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Worst Case Analysis AC Sweep Genera
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14- Chapter 14 Optimizing Data This
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.MODEL Statement Syntax General For
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Laplace Transforms Voltage Gain H(s
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15- Chapter 15 Output Format The to
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Graphing Results in AvanWaves Setup
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Print Commands Graph Commands A, D
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See “.GRAPH Statement” in the S
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Print Commands Target General Form
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Print Commands out_var result TO WE
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Print Commands YMAX If the absolute
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DC and Transient Output out_var(1,2
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AC Analysis Output AC Analysis Outp
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Element Template Output ZIN ZOUT In
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Element Template Listings Name Alia
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Element Template Listings Independe
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