Star-Hspice Quick Reference Guide

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MOSFET Models Name Alias Description GMO LX7 DC gate transconductance (GMO) GDSO LX8 DC drain-source conductance (GDSO) GMESO LX9 DC substrate transconductance (GMBSO) GBDO LX10 Conductance of the drain diode (GBDO) GBSO LX11 Conductance of the source diode (GBSO) See “LEVEL 57 Template Output” in the Star-Hspice Manual. Meyer and Charge Conservation Model Parameters Name Alias Description QB LX12 Body charge (QB) CQB LX13 Body charge current (CQB) QG LX14 Gate charge (QG) CQG LX15 Gate charge current (CQG) QD LX16 Channel charge (QD) CQD LX17 Channel charge current (CQD) CGGBO LX18 CGGBO = ∂Qg/ ∂Vgb = CGS + CGD + CGB 10-20 Star-Hspice Quick Reference Guide
LEVEL 57 UC Berkeley BSIM3-SOI Model Name Alias Description CGDBO LX19 CGDBO = ∂Qg/ ∂Vdb , (for Meyer CGD=-CGDBO) CGSBO LX20 CGSBO = ∂Qg/ ∂Vsb , (for Meyer CGS=-CGSBO) CBGBO LX21 CBGBO = ∂Qb/ ∂Vgb , (for Meyer CGB=-CBGBO) CBDBO CBSBO CDGBO CDDBO CDSBO LX22 LX23 LX32 LX33 LX34 CBDBO CBSBO CDGBO CDDBO CDSBO = ∂Qb/ ∂Vdb = ∂Qb/ ∂Vsb = ∂Qd/ ∂Vgb = ∂Qd/ ∂Vdb = ∂Qd/ ∂Vsb QE LX35 Substrate charge (QE) CQE LX36 Substrate charge current (CQE) CDEBO CBEBO CEEBO CEGBO CEDBO LX37 LX38 LX39 LX40 LX41 CDEBO CBEBO CEEBO CEGBO CEDBO = ∂Qd/ ∂Veb = ∂Qb/ ∂Veb = ∂Qe/ ∂Veb = ∂Qe/ ∂Vgb = ∂Qe/ ∂Vdb Star-Hspice Quick Reference Guide 10-21
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Star-Hspice Quick Reference Guide R
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AGREEMENT WITH AVANT! CORPORATION O
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1- Chapter 1 Introduction This Quic
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Input and Output Files Input and Ou
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.PARAMETER .END Input and Output Fi
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Input and Output Files tnom vt(t) v
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2- Chapter 2 Discrete Device Librar
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3- Chapter 3 Passive Devices and In
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n1 n2 R Rxxx SCALE TC1 TC2 user-def
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Capacitors M W L DTEMP C=‘equatio
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IC L=inductance L=‘equation’ LT
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Independent Source Element Lzzz Nam
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Pulse Source Function General Form
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Single-Frequency FM Source Function
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Independent Sources TIME tr v1 v2
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4- Chapter 4 Transmission Lines Sta
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5- Chapter 5 IBIS Conventions The t
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Buffers + [interpol={1|2}] + [ramp_
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Buffers I/O Open Drain, I/O Open Si
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Differential Pins + [buffer={13|io_
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6- Chapter 6 Diodes The topics cove
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Junction Model Statement WP Width o
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Junction Model Parameters Name (Ali
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Junction Cap Model nodeplus nminus
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Junction Cap Model Name (Alias) Uni
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Junction Cap Model Name (Alias) Uni
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Temperature Effects Temperature Eff
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Fowler-Nordheim Diode Name (Alias)
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Fowler-Nordheim Diode Name (Alias)
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7- Chapter 7 BJT Element The topics
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BJT Model Parameters mname NPN pnam
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BJT Model Parameters Low-Current Be
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See “Using Parasitic Resistance P
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BJT Model Parameters Transit Time P
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LEVEL 6 Philips Bipolar Model LEVEL
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LEVEL 6 Philips Bipolar Model Param
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LEVEL 6 Philips Bipolar Model Flags
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Avalanche Model Parameters - Level
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Base-Emitter Capacitances - Level 5
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Transit Time Parameters - Level 504
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LEVEL 6 Philips Bipolar Model Noise
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LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
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LEVEL 8 HiCUM Model BE Depletion Ca
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LEVEL 8 HiCUM Model Critical Curren
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LEVEL 8 HiCUM Model Parameter Unit
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LEVEL 8 HiCUM Model BE Tunneling Pa
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Page 103 and 104: 8- Chapter 8 Elements This chapter
Page 105 and 106: JFET and MESFET Model Statements JF
Page 107 and 108: JFET Model Parameters Name (Alias)
Page 113 and 114: 9- Chapter 9 MOSFET Introduction Th
Page 115 and 116: MOSFET Element Statement RDC RSC W
Page 117 and 118: MOSFET Element Statement Capacitanc
Page 119 and 120: MOSFET Element Statement Name (Alia
Page 125 and 126: Charge Conservation Parameters (CAP
Page 129 and 130: 10- Chapter 10 MOSFET Models This c
Page 131 and 132: Model Table LEVEL MOSFET Model Desc
Page 133 and 134: Model Table LEVEL MOSFET Model Desc
Page 135 and 136: LEVEL 47 BSIM3 Version 2 MOS Model
Page 137 and 138: LEVELs 49 and 53 BSIM3v3 MOS Models
Page 139 and 140: LEVEL 54 BSIM 4.0 Model • Since d
Page 141 and 142: LEVEL 55 EPFL-EKV MOSFET Model LEVE
Page 143 and 144: LEVEL 57 UC Berkeley BSIM3-SOI Mode
Page 145 and 146: LEVEL 57 UC Berkeley BSIM3-SOI Mode
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Page 151 and 152: LEVEL 58 University of Florida SOI
Page 153 and 154: LEVEL 59 UC Berkeley BSIM3-SOI FD M
Page 155 and 156: LEVEL 60 UC Berkeley BSIM3-SOI DD M
Page 157 and 158: LEVEL 62 RPI Poli-Si TFT Model •
Page 159 and 160: 11- Chapter 11 Behavior Macromodeli
Page 161 and 162: G Elements Voltage Controlled Curre
Page 163 and 164: Voltage and Current Controlled Elem
Page 171 and 172: F Element Parameters Voltage and Cu
Page 177 and 178: 12- Chapter 12 Controlling Input Th
Page 179 and 180: General Control Options Option NOEL
Page 181 and 182: General Control Options Interface O
Page 183 and 184: General Control Options Error Optio
Page 185 and 186: Model Analysis Options Option DEFNR
Page 187 and 188: Model Analysis Options Option RELMO
Page 189 and 190: Model Analysis Options Option DCSTE
Page 191 and 192: Model Analysis Options Option PZTOL
Page 193 and 194: Model Analysis Options Option RELTO
Page 195 and 196: Model Analysis Options Option RELVA
Page 197 and 198: Statements Statements Star-Hspice s
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Statements pnami colnum fileout pva
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Statements elname Element name that
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.LIB Library File Definition Statem
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Statements VERSION Star-Hspice vers
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.TITLE Statement See “Title of Si
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13- Chapter 13 Analyzing Data You c
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DC Analysis incr1 … MODEL MONTE=v
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AC Analysis See “.TF Statement
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stop SWEEP TEMP type var .DISTO Sta
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Small-Signal Network Analysis .NET
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Double-Point Analysis General Form
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tstop1… type UIC var FFT Analysis
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Worst Case Analysis Numerical Integ
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Worst Case Analysis AC Sweep Genera
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14- Chapter 14 Optimizing Data This
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.MODEL Statement Syntax General For
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Laplace Transforms Voltage Gain H(s
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15- Chapter 15 Output Format The to
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Graphing Results in AvanWaves Setup
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Print Commands Graph Commands A, D
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See “.GRAPH Statement” in the S
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Print Commands Target General Form
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Print Commands out_var result TO WE
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Print Commands YMAX If the absolute
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DC and Transient Output out_var(1,2
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AC Analysis Output AC Analysis Outp
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Element Template Output ZIN ZOUT In
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Element Template Listings Name Alia
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Element Template Listings Independe
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