Star-Hspice Quick Reference Guide

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MOSFET Models channel effect defined by LRSCE (and NBH or NHALO); the latter effect is also turned off when WKF is specified. • For floating-body devices, set CGFBO=0. • JRO and SEFF influence the gain of the BJT, but LDIFF affects only bipolar charge storage in the source/drain. The BJT gain is influenced by NBH and NHALO (if THALO is specified) as well. • The (non-local) impact-ionization model is physical, and its parameters should not be varied arbitrarily. • The LDD option intensifies the model; set LLDD=0 for large-scale circuit simulation, and add the unbiased LDD resistance to RD. This simplification will stop if NLDD > 1e19. LEVEL 59 UC Berkeley BSIM3-SOI FD Model General Form Mxxx nd ng ns ne mname + + + + + AD Drain diffusion area AS Source diffusion area BJTOFF Turning off BJT if equal to 1 CTH0 Thermal capacitance per unit width IC Initial guess in the order 10-24 Star-Hspice Quick Reference Guide
LEVEL 59 UC Berkeley BSIM3-SOI FD Model L M mname Mxxx nd ne ng np NRB NRD NRS ns OFF PD PS SOI MOSFET channel length in meters Multiplier to simulate multiple SOI MOSFETs in parallel MOSFET model name reference SOI MOSFET element name Drain terminal node name or number Back gate (or substrate) node name or number Front gate node name or number Optional external body contact node name or number Number of squares for body series resistance Number of squares of drain diffusion for drain series resistance Number of squares of source diffusion for source series resistance Source terminal node name or number Sets initial condition to OFF in DC analysis Perimeter of drain junction, including the channel edge Perimeter of source junction, including the channel edge Star-Hspice Quick Reference Guide 10-25
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Star-Hspice Quick Reference Guide R
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AGREEMENT WITH AVANT! CORPORATION O
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1- Chapter 1 Introduction This Quic
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Input and Output Files Input and Ou
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.PARAMETER .END Input and Output Fi
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Input and Output Files tnom vt(t) v
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2- Chapter 2 Discrete Device Librar
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3- Chapter 3 Passive Devices and In
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n1 n2 R Rxxx SCALE TC1 TC2 user-def
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Capacitors M W L DTEMP C=‘equatio
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IC L=inductance L=‘equation’ LT
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Independent Source Element Lzzz Nam
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Pulse Source Function General Form
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Single-Frequency FM Source Function
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Independent Sources TIME tr v1 v2
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4- Chapter 4 Transmission Lines Sta
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5- Chapter 5 IBIS Conventions The t
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Buffers + [interpol={1|2}] + [ramp_
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Buffers I/O Open Drain, I/O Open Si
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Differential Pins + [buffer={13|io_
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6- Chapter 6 Diodes The topics cove
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Junction Model Statement WP Width o
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Junction Model Parameters Name (Ali
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Junction Cap Model nodeplus nminus
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Junction Cap Model Name (Alias) Uni
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Junction Cap Model Name (Alias) Uni
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Temperature Effects Temperature Eff
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Fowler-Nordheim Diode Name (Alias)
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Fowler-Nordheim Diode Name (Alias)
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7- Chapter 7 BJT Element The topics
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BJT Model Parameters mname NPN pnam
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BJT Model Parameters Low-Current Be
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See “Using Parasitic Resistance P
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BJT Model Parameters Transit Time P
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LEVEL 6 Philips Bipolar Model LEVEL
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LEVEL 6 Philips Bipolar Model Param
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LEVEL 6 Philips Bipolar Model Flags
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Avalanche Model Parameters - Level
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Base-Emitter Capacitances - Level 5
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Transit Time Parameters - Level 504
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LEVEL 6 Philips Bipolar Model Noise
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LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
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LEVEL 8 HiCUM Model BE Depletion Ca
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LEVEL 8 HiCUM Model Critical Curren
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LEVEL 8 HiCUM Model Parameter Unit
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LEVEL 8 HiCUM Model BE Tunneling Pa
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LEVEL 8 HiCUM Model Substrate Trans
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LEVEL 8 HiCUM Model Parameter Unit
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Page 103 and 104: 8- Chapter 8 Elements This chapter
Page 105 and 106: JFET and MESFET Model Statements JF
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Page 115 and 116: MOSFET Element Statement RDC RSC W
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Page 125 and 126: Charge Conservation Parameters (CAP
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Page 131 and 132: Model Table LEVEL MOSFET Model Desc
Page 133 and 134: Model Table LEVEL MOSFET Model Desc
Page 135 and 136: LEVEL 47 BSIM3 Version 2 MOS Model
Page 137 and 138: LEVELs 49 and 53 BSIM3v3 MOS Models
Page 139 and 140: LEVEL 54 BSIM 4.0 Model • Since d
Page 141 and 142: LEVEL 55 EPFL-EKV MOSFET Model LEVE
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Page 157 and 158: LEVEL 62 RPI Poli-Si TFT Model •
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Page 179 and 180: General Control Options Option NOEL
Page 181 and 182: General Control Options Interface O
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Page 185 and 186: Model Analysis Options Option DEFNR
Page 187 and 188: Model Analysis Options Option RELMO
Page 189 and 190: Model Analysis Options Option DCSTE
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Page 193 and 194: Model Analysis Options Option RELTO
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Page 197 and 198: Statements Statements Star-Hspice s
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.LIB Library File Definition Statem
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Statements VERSION Star-Hspice vers
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.TITLE Statement See “Title of Si
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13- Chapter 13 Analyzing Data You c
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DC Analysis incr1 … MODEL MONTE=v
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AC Analysis See “.TF Statement
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stop SWEEP TEMP type var .DISTO Sta
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Small-Signal Network Analysis .NET
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Double-Point Analysis General Form
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tstop1… type UIC var FFT Analysis
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Worst Case Analysis Numerical Integ
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Worst Case Analysis AC Sweep Genera
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14- Chapter 14 Optimizing Data This
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.MODEL Statement Syntax General For
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Laplace Transforms Voltage Gain H(s
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15- Chapter 15 Output Format The to
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Graphing Results in AvanWaves Setup
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Print Commands Graph Commands A, D
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See “.GRAPH Statement” in the S
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Print Commands Target General Form
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Print Commands out_var result TO WE
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Print Commands YMAX If the absolute
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DC and Transient Output out_var(1,2
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AC Analysis Output AC Analysis Outp
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Element Template Output ZIN ZOUT In
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Element Template Listings Name Alia
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Element Template Listings Independe
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