Star-Hspice Quick Reference Guide

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MOSFET Models • Set up the conversion of temperature between Star-Hspice and SPICE3 as follows: SPICE3:.OPTIONS TEMP=125 .MODEL NCH NMOS LEVEL=8 +TNOM =27 ... HSPICE:.TEMP 125 .MODEL NCH NMOS LEVEL=47 +TREF =27 ... • SCALM affects the common MOS parameters, such as XL, LD, XW, WD, CJ, CJSW, JS, and JSW. • LEVEL 47 uses MOS parasitic models, specified by ACM. • LEVEL 47 uses MOS noise models, specified by NLEV. • DELVTO and DTEMP on the element line can be used with LEVEL 47. • The impact ionization current set by PSCBE1 and PSCBE2 contributes to the drain-source current; not bulk current. For more information about this model, see “Using the BSIM3 Version 2 MOS Model in Star-Hspice” in the Star-Hspice Manual. 10-8 Star-Hspice Quick Reference Guide
LEVELs 49 and 53 BSIM3v3 MOS Models LEVELs 49 and 53 BSIM3v3 MOS Models LEVELs 49 and 53 use the general model statement described in “MOSFET Model Statement” on page 9-3. They also maintain compliance with the UC Berkeley release of BSIM3v3. The basic differences between LEVEL 49 and 53 are: • LEVEL 49 was designed to be compliant with Berkeley BSIM3v3, but enhanced for higher speed. To achieve this, ACM defaults to 0 in LEVEL 49; compliance with Berkeley BSIM3v3 requires ACM=10. • LEVEL 53, on the other hand, is completely compliant with Berkeley BSIM3v3; all Hspice-specific parameters default to OFF. For more information about this model, see “LEVELs 49 and 53 BSIM3v3 MOS Models” in the Star-Hspice Manual. Selecting Model Versions The recommended BSIM3v3 model specification is LEVEL=49, VERSION=3.22. See “Selecting Model Versions” in the Star-Hspice Manual. LEVEL 50 Philips MOS9 Model The Philips MOS9 model, available in Star-Hspice as LEVEL 50, uses the general model statement described in “MOSFET Model Statement” on page 9-3. Specific changes include: • The ACM Parasitic Diode Model, using parameters JS, JSW, N, CJ, CJSW, CJGATE, MJ, MJSW, PB, PHP, ACM, and HDIF was added. Star-Hspice Quick Reference Guide 10-9
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Star-Hspice Quick Reference Guide R
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AGREEMENT WITH AVANT! CORPORATION O
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1- Chapter 1 Introduction This Quic
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Input and Output Files Input and Ou
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.PARAMETER .END Input and Output Fi
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Input and Output Files tnom vt(t) v
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2- Chapter 2 Discrete Device Librar
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3- Chapter 3 Passive Devices and In
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n1 n2 R Rxxx SCALE TC1 TC2 user-def
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Capacitors M W L DTEMP C=‘equatio
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IC L=inductance L=‘equation’ LT
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Independent Source Element Lzzz Nam
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Pulse Source Function General Form
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Single-Frequency FM Source Function
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Independent Sources TIME tr v1 v2
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4- Chapter 4 Transmission Lines Sta
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5- Chapter 5 IBIS Conventions The t
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Buffers + [interpol={1|2}] + [ramp_
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Buffers I/O Open Drain, I/O Open Si
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Differential Pins + [buffer={13|io_
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6- Chapter 6 Diodes The topics cove
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Junction Model Statement WP Width o
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Junction Model Parameters Name (Ali
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Junction Cap Model nodeplus nminus
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Junction Cap Model Name (Alias) Uni
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Junction Cap Model Name (Alias) Uni
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Temperature Effects Temperature Eff
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Fowler-Nordheim Diode Name (Alias)
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Fowler-Nordheim Diode Name (Alias)
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7- Chapter 7 BJT Element The topics
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BJT Model Parameters mname NPN pnam
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BJT Model Parameters Low-Current Be
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See “Using Parasitic Resistance P
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BJT Model Parameters Transit Time P
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LEVEL 6 Philips Bipolar Model LEVEL
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LEVEL 6 Philips Bipolar Model Param
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LEVEL 6 Philips Bipolar Model Flags
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Avalanche Model Parameters - Level
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Base-Emitter Capacitances - Level 5
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Transit Time Parameters - Level 504
Page 85 and 86: LEVEL 6 Philips Bipolar Model Noise
Page 87 and 88: LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
Page 89 and 90: LEVEL 8 HiCUM Model BE Depletion Ca
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Page 103 and 104: 8- Chapter 8 Elements This chapter
Page 105 and 106: JFET and MESFET Model Statements JF
Page 107 and 108: JFET Model Parameters Name (Alias)
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Page 115 and 116: MOSFET Element Statement RDC RSC W
Page 117 and 118: MOSFET Element Statement Capacitanc
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Page 125 and 126: Charge Conservation Parameters (CAP
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Page 131 and 132: Model Table LEVEL MOSFET Model Desc
Page 133 and 134: Model Table LEVEL MOSFET Model Desc
Page 135: LEVEL 47 BSIM3 Version 2 MOS Model
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Page 141 and 142: LEVEL 55 EPFL-EKV MOSFET Model LEVE
Page 143 and 144: LEVEL 57 UC Berkeley BSIM3-SOI Mode
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Page 153 and 154: LEVEL 59 UC Berkeley BSIM3-SOI FD M
Page 155 and 156: LEVEL 60 UC Berkeley BSIM3-SOI DD M
Page 157 and 158: LEVEL 62 RPI Poli-Si TFT Model •
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Page 163 and 164: Voltage and Current Controlled Elem
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Model Analysis Options Option RELMO
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Model Analysis Options Option DCSTE
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Model Analysis Options Option PZTOL
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Model Analysis Options Option RELTO
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Model Analysis Options Option RELVA
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Statements Statements Star-Hspice s
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Statements pnami colnum fileout pva
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Statements elname Element name that
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.LIB Library File Definition Statem
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Statements VERSION Star-Hspice vers
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.TITLE Statement See “Title of Si
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13- Chapter 13 Analyzing Data You c
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DC Analysis incr1 … MODEL MONTE=v
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AC Analysis See “.TF Statement
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stop SWEEP TEMP type var .DISTO Sta
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Small-Signal Network Analysis .NET
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Double-Point Analysis General Form
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tstop1… type UIC var FFT Analysis
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Worst Case Analysis Numerical Integ
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Worst Case Analysis AC Sweep Genera
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14- Chapter 14 Optimizing Data This
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.MODEL Statement Syntax General For
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Laplace Transforms Voltage Gain H(s
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15- Chapter 15 Output Format The to
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Graphing Results in AvanWaves Setup
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Print Commands Graph Commands A, D
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See “.GRAPH Statement” in the S
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Print Commands Target General Form
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Print Commands out_var result TO WE
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Print Commands YMAX If the absolute
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DC and Transient Output out_var(1,2
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AC Analysis Output AC Analysis Outp
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Element Template Output ZIN ZOUT In
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Element Template Listings Name Alia
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Element Template Listings Independe
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