Star-Hspice Quick Reference Guide

LEVEL 58 University of Florida SOI Model
arguments described in “LEVEL 57 Template Output” on
page 10-18.
In some processes, there is an external body contact to the
device. Star-Hspice only supports a 4-terminal device, which
includes drain, front gate, source and back gate (or substrate).
Additional body contact is not supported and is floated.
The effects of parasitic diodes in SOI are different from those
in bulk MOSFET. The Star-Hspice junction model (ACM),
developed for bulk MOSFETs, is not included in the SOI
model. For more information about this model, see “LEVEL
58 University of Florida SOI Model” in the Star-Hspice
Manual.
Using the UFSOI Model in Star-Hspice
• Default value for channel length L and width W is 1.0e-6.
• LEVEL 58 supports only 4 nodes (only floating-body
devices). AB is usually zero and should be specified.
• When the self-heating option is activated, RTH and CTH
define the thermal impedance of the device.
• For M > 1, W, AD, AS, NRD, NRS, NRB, PDJ, PSJ, RTH,
and CTH must be specified per gate finger.
• The initial condition IC is in the order: drain voltage Vds,
front gate voltage Vgfs, and back gate voltage Vbgs.
• The model line must include LEVEL=58 and NFDMOD=0
for FD or NFDMOD=1 for NFD devices.
• Specifying VFBF turns off the narrow-width effect defined
by NQFSW (positive or negative) and the reverse short-
Star-Hspice Quick Reference Guide 10-23