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Star-Hspice Quick Reference Guide

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LEVEL 54 BSIM 4.0 Model<br />

• Since defaults are non-zero, every model parameter listed in<br />

LEVEL 50 Model Parameters table should be set in the<br />

.MODEL statement.<br />

• Select one of two available parasitic junction diode models,<br />

ACM and JUNCAP. JUNCAP=1 selects the Philips<br />

JUNCAP model, JUNCAP=0 (default) selects the<br />

<strong>Star</strong>-<strong>Hspice</strong> ACM model.<br />

See “Using the Philips MOS9 Model in <strong>Star</strong>-<strong>Hspice</strong>” in the<br />

<strong>Star</strong>-<strong>Hspice</strong> Manual.<br />

LEVEL 54 BSIM 4.0 Model<br />

The UC Berkeley BSIM 4.0.0 MOS model is the LEVEL 54<br />

<strong>Star</strong>-<strong>Hspice</strong> model; it is designed for modeling sub-0.13<br />

micron CMOS technology and RF high-speed CMOS circuit<br />

simulation. LEVEL 54 uses the general model statement<br />

described in “MOSFET Model Statement” on page 9-3.<br />

BSIM4.0.0 has major improvements and additions over<br />

BSIM3v3, including:<br />

• A model of the intrinsic input resistance (Rii) for both RF,<br />

high-frequency analog, and high-speed digital applications<br />

• Flexible substrate resistance network for RF modeling<br />

• A channel thermal noise model and a noise partition model<br />

for the induced gate noise<br />

• A non-quasi-static (NQS) model consistent with the Riibased<br />

RF model and an AC model that accounts for the NQS<br />

effect in both transconductances and capacitances<br />

<strong>Star</strong>-<strong>Hspice</strong> <strong>Quick</strong> <strong>Reference</strong> <strong>Guide</strong> 10-11

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