Star-Hspice Quick Reference Guide

More documents

Recommendations

Info

Controlling Input Option ABSMOS = x ABSTOL = x ABSVDC = x DI = x KCLTEST MAXAMP = x RELH = x RELI = x Description Current error tolerance used for MOSFET devices in both DC and transient analysis. Sets the absolute node voltage error tolerance for DC and transient analysis. Sets the absolute minimum voltage for DC and transient analysis. Sets the maximum iteration-to-iteration current change through voltage defined branches (voltage sources and inductors). Activates the KCL test (Kirchhoff’s Current Law) function. Sets the maximum current through voltage defined branches (voltage sources and inductors). Sets relative current tolerance through voltage defined branches (voltage sources and inductors). Sets the relative error/tolerance change from iteration to iteration to determine convergence for all currents in diode, BJT, and JFET devices. 12-10 Star-Hspice Quick Reference Guide
Model Analysis Options Option RELMOS = x RELV = x RELVDC = x ITL1 = x ITL2 = x NOPIV PIVOT = x PIVREF PIVREL = x PIVTOL = x SPARSE = x Description Sets the relative drain-to-source current error tolerance percent from iteration to iteration to determine convergence for currents in MOSFET devices. Sets the relative error tolerance for voltages Sets the relative error tolerance for voltages. Sets the maximum DC iteration limit. Sets the DC transfer curve iteration limit. Prevents Star-Hspice from switching automatically to pivoting matrix factorization when a nodal conductance is less than PIVTOL. NOPIV inhibits pivoting. Also see PIVOT. Provides different pivoting algorithm selections. Pivot reference. Sets the maximum/minimum row/matrix ratio. Sets the absolute minimum value for which a matrix entry is accepted as a pivot. Same as PIVOT. Star-Hspice Quick Reference Guide 12-11
Page 1 and 2:
Star-Hspice Quick Reference Guide R
Page 3 and 4:
AGREEMENT WITH AVANT! CORPORATION O
Page 5 and 6:
1- Chapter 1 Introduction This Quic
Page 7 and 8:
Input and Output Files Input and Ou
Page 9 and 10:
.PARAMETER .END Input and Output Fi
Page 11 and 12:
Input and Output Files tnom vt(t) v
Page 13 and 14:
2- Chapter 2 Discrete Device Librar
Page 15 and 16:
3- Chapter 3 Passive Devices and In
Page 17 and 18:
n1 n2 R Rxxx SCALE TC1 TC2 user-def
Page 19 and 20:
Capacitors M W L DTEMP C=‘equatio
Page 21 and 22:
IC L=inductance L=‘equation’ LT
Page 23 and 24:
Independent Source Element Lzzz Nam
Page 25 and 26:
Pulse Source Function General Form
Page 27 and 28:
Single-Frequency FM Source Function
Page 29 and 30:
Independent Sources TIME tr v1 v2
Page 31 and 32:
4- Chapter 4 Transmission Lines Sta
Page 33 and 34:
5- Chapter 5 IBIS Conventions The t
Page 35 and 36:
Buffers + [interpol={1|2}] + [ramp_
Page 37 and 38:
Buffers I/O Open Drain, I/O Open Si
Page 39 and 40:
Differential Pins + [buffer={13|io_
Page 41 and 42:
6- Chapter 6 Diodes The topics cove
Page 43 and 44:
Junction Model Statement WP Width o
Page 45 and 46:
Junction Model Parameters Name (Ali
Page 47 and 48:
Junction Cap Model nodeplus nminus
Page 49 and 50:
Junction Cap Model Name (Alias) Uni
Page 51 and 52:
Junction Cap Model Name (Alias) Uni
Page 53 and 54:
Temperature Effects Temperature Eff
Page 55 and 56:
Fowler-Nordheim Diode Name (Alias)
Page 57 and 58:
Fowler-Nordheim Diode Name (Alias)
Page 59 and 60:
7- Chapter 7 BJT Element The topics
Page 61 and 62:
BJT Model Parameters mname NPN pnam
Page 63 and 64:
BJT Model Parameters Low-Current Be
Page 65 and 66:
See “Using Parasitic Resistance P
Page 67 and 68:
BJT Model Parameters Transit Time P
Page 69 and 70:
LEVEL 6 Philips Bipolar Model LEVEL
Page 71 and 72:
LEVEL 6 Philips Bipolar Model Param
Page 73 and 74:
Page 75 and 76:
Page 77 and 78:
LEVEL 6 Philips Bipolar Model Flags
Page 79 and 80:
Avalanche Model Parameters - Level
Page 81 and 82:
Base-Emitter Capacitances - Level 5
Page 83 and 84:
Transit Time Parameters - Level 504
Page 85 and 86:
LEVEL 6 Philips Bipolar Model Noise
Page 87 and 88:
LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
Page 89 and 90:
LEVEL 8 HiCUM Model BE Depletion Ca
Page 91 and 92:
LEVEL 8 HiCUM Model Critical Curren
Page 93 and 94:
LEVEL 8 HiCUM Model Parameter Unit
Page 95 and 96:
LEVEL 8 HiCUM Model BE Tunneling Pa
Page 97 and 98:
LEVEL 8 HiCUM Model Substrate Trans
Page 99 and 100:
Page 101 and 102:
Page 103 and 104:
8- Chapter 8 Elements This chapter
Page 105 and 106:
JFET and MESFET Model Statements JF
Page 107 and 108:
JFET Model Parameters Name (Alias)
Page 109 and 110:
Page 111 and 112:
Page 113 and 114:
9- Chapter 9 MOSFET Introduction Th
Page 115 and 116:
MOSFET Element Statement RDC RSC W
Page 117 and 118:
MOSFET Element Statement Capacitanc
Page 119 and 120:
MOSFET Element Statement Name (Alia
Page 121 and 122:
Page 123 and 124:
Page 125 and 126:
Charge Conservation Parameters (CAP
Page 127 and 128:
Page 129 and 130:
10- Chapter 10 MOSFET Models This c
Page 131 and 132:
Model Table LEVEL MOSFET Model Desc
Page 133 and 134:
Model Table LEVEL MOSFET Model Desc
Page 135 and 136: LEVEL 47 BSIM3 Version 2 MOS Model
Page 137 and 138: LEVELs 49 and 53 BSIM3v3 MOS Models
Page 139 and 140: LEVEL 54 BSIM 4.0 Model • Since d
Page 141 and 142: LEVEL 55 EPFL-EKV MOSFET Model LEVE
Page 143 and 144: LEVEL 57 UC Berkeley BSIM3-SOI Mode
Page 151 and 152: LEVEL 58 University of Florida SOI
Page 153 and 154: LEVEL 59 UC Berkeley BSIM3-SOI FD M
Page 155 and 156: LEVEL 60 UC Berkeley BSIM3-SOI DD M
Page 157 and 158: LEVEL 62 RPI Poli-Si TFT Model •
Page 159 and 160: 11- Chapter 11 Behavior Macromodeli
Page 161 and 162: G Elements Voltage Controlled Curre
Page 163 and 164: Voltage and Current Controlled Elem
Page 171 and 172: F Element Parameters Voltage and Cu
Page 177 and 178: 12- Chapter 12 Controlling Input Th
Page 179 and 180: General Control Options Option NOEL
Page 181 and 182: General Control Options Interface O
Page 183 and 184: General Control Options Error Optio
Page 185: Model Analysis Options Option DEFNR
Page 189 and 190: Model Analysis Options Option DCSTE
Page 191 and 192: Model Analysis Options Option PZTOL
Page 193 and 194: Model Analysis Options Option RELTO
Page 195 and 196: Model Analysis Options Option RELVA
Page 197 and 198: Statements Statements Star-Hspice s
Page 199 and 200: Statements pnami colnum fileout pva
Page 201 and 202: Statements elname Element name that
Page 203 and 204: .LIB Library File Definition Statem
Page 205 and 206: Statements VERSION Star-Hspice vers
Page 207 and 208: .TITLE Statement See “Title of Si
Page 209 and 210: 13- Chapter 13 Analyzing Data You c
Page 211 and 212: DC Analysis incr1 … MODEL MONTE=v
Page 213 and 214: AC Analysis See “.TF Statement
Page 215 and 216: stop SWEEP TEMP type var .DISTO Sta
Page 217 and 218: Small-Signal Network Analysis .NET
Page 219 and 220: Double-Point Analysis General Form
Page 221 and 222: tstop1… type UIC var FFT Analysis
Page 223 and 224: Worst Case Analysis Numerical Integ
Page 225 and 226: Worst Case Analysis AC Sweep Genera
Page 227 and 228: 14- Chapter 14 Optimizing Data This
Page 229 and 230: .MODEL Statement Syntax General For
Page 231 and 232: Laplace Transforms Voltage Gain H(s
Page 233 and 234: 15- Chapter 15 Output Format The to
Page 235 and 236: Graphing Results in AvanWaves Setup
Page 237 and 238:
Print Commands Graph Commands A, D
Page 239 and 240:
See “.GRAPH Statement” in the S
Page 241 and 242:
Print Commands Target General Form
Page 243 and 244:
Print Commands out_var result TO WE
Page 245 and 246:
Print Commands YMAX If the absolute
Page 247 and 248:
DC and Transient Output out_var(1,2
Page 249 and 250:
AC Analysis Output AC Analysis Outp
Page 251 and 252:
Element Template Output ZIN ZOUT In
Page 253 and 254:
Element Template Listings Name Alia
Page 255 and 256:
Element Template Listings Independe
Page 257 and 258:
Page 259 and 260:
Page 261 and 262:
Page 263 and 264:
Page 265 and 266:
show all

Star-Hspice Quick Reference Guide

Create successful ePaper yourself

Delete template?

Save as template?