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Name (Title):<br />

Masato Nakaya (NIMS researcher)<br />

Affiliation:<br />

International Center for Materials Nanoarchitectonics<br />

(MANA), NIMS<br />

Address:<br />

1-1 Namiki, Tsukuba. Ibaraki 305-0044, Japan<br />

Email: NAKAYA.Masato@nims.go.jp<br />

Home Page:<br />

Presentation Title:<br />

Reversibility–controlled chemical reaction between fullerene molecules<br />

and its application for information storage devices<br />

<strong>Abstract</strong>:<br />

[Masato Nakaya, Masakazu Aono and Tomonobu Nakayama]<br />

One of the attractive features of fullerene C60 molecules is that their functionality changes<br />

depending on intermolecular chemical bonds. Thus, controlling chemical bonds formation<br />

(polymerization) and annihilation (depolymerization) between C60 molecules at single molecule<br />

level is of great interest for realizing nanoscale devices such as a stable switch and nonvolatile<br />

memory cells. Here, we present methodology and application of the control of local<br />

intermolecular reaction between C60 molecules using a tip of scanning tunneling microscope<br />

(STM).<br />

For experiments, we prepared C60 films formed on the highly oriented pyrolitic graphite<br />

(HOPG) and on the Si(111)√3×√3R30˚−Ag surfaces. We can control polymerization and<br />

depolymerization at room temperature only by selecting an appropriate bias voltage (Vs) applied<br />

to the C60 film. At negative Vs, C60 molecules are efficiently reacted with each other via [2+2]<br />

cycloaddition reaction beneath the tip (Fig. a−b). In contrast, the created [2+2] cycloadduct tends<br />

to dissociate into monomers by applying positive Vs (Fig. b−c). Magnitude of Vs is also important<br />

for controlling the spatial precision and the area of the STM–induced chemical reactions. By<br />

setting the appropriate polarity and magnitude of the bias voltage, we can induce the<br />

polymerization and depolymerization at designated single molecule beneath the tip. We also<br />

demonstrate ultradense rewritable data storage into C60 films. Writing and erasing of digital data<br />

were carried out by inducing polymerization and depolymerization in interlayer of C60 multilayer<br />

film, respectively, realizing a bit density of 190 Tbits/inch 2 .<br />

a b c<br />

Figure. STM image of C60 film a before polymerization, b after polymerization<br />

and c after depolymerization<br />

Poster Session PS-7<br />

77

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