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Name (Title):
Jian-Yong LI (MANA Research Associate)
Affiliation:
International Center for Materials Nanoarchitectonics.
National Institute for Materials Science
Address:
1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Email: LI.Jianyong@nims.go.jp
Home Page: http://www.nims.go.jp/mana/
Presentation Title:
Electric Properties of Nano-structured Metal Oxides II
Abstract:
Perovskite-type oxides possess useful functions such as ferroelectricity. Thus, many
investigations on nano-sized perovskite-type metal oxide is currently extensively studied. For
developments of nano-sized ferroelectric materials, so-called size-effects, that is suppression of
ferroelectricity by reduction of grain size,. is one of the crucial issues. Although the size effect
has to be considered for developments of micro-devices using ferroelectric metal oxides, there
are many difficulties on evaluation of size effects in those materials. Electric field induced
property changes in nano-sized metal oxides are also very important issue. If we apply constant
bias to a certain material having different size, the filed strength increases proportionally to the
inverse material size. In fact, it has been indicated that paraelectric phases transforms to
ferroelectric phase by applying very high electric field, and, recently, electric field induced
resistance switching is a fascinating topic in terms of non-volatile memory applications. Thus, we
have to consider materials size-effect and field strength when we deal with the electric response
from nano-sized mater.
In this study, Pt/n-SrTiO3 interfaces have been
investigated to elucidate properties of nano-sized
SrTiO3 under very high field strength. Since the
depletion layer width is in nanometric scale in these
junctions, the filed strength in for this depletion layer
was more than 10MV/m. As seen in the figure, we
observed obvious resistance switching behavior at
Pt/n-SrTiO3 junction. From these results, we discuss
size effect and field induced property change within
the depletion layer having nanometric scale thickness.
In fact, we could see huge deviation of electric
properties from ordinary Schottky junction model.
Detailed results will be presented in the
conference.
Poster Session PM-25
Typical resistance switching behavior observed
at Pt/n-SrTiO3 interface. Here, n-SrTiO3 was
obtained by substituting niobium for titanium.
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