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Name (Title):<br />
Jun Chen (ICYS-MANA Researcher)<br />
Affiliation:<br />
International Center for Young Scientists (ICYS) &<br />
International Center for Materials Nanoarchitechtonics (MANA), NIMS<br />
Address:<br />
1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan<br />
Email: CHEN.Jun@nims.go.jp<br />
Home Page:<br />
Presentation Title:<br />
A versatile application of electron-beam-induced current technique in semiconductor diagnosis<br />
<strong>Abstract</strong>:<br />
We presented advanced semiconductor diagnosis by using electron-beam-induced current<br />
(EBIC) technique. By varying the parameters such as temperature, accelerating voltage, bias<br />
voltage, and time, it is possible to extend EBIC application from conventional defect<br />
characterization to advanced device diagnosis. Since electron beam can excite a certain volume<br />
even it is beneath the surface passive layer, EBIC can sometimes very easy to diagnose<br />
complicated devices with hybrid structure.<br />
Three topics were selected to demonstrate EBIC applications.[1] First, the electrical<br />
recombination activities of grain boundaries and their interaction with Fe impurity in<br />
photovoltaic multicrystalline Si are clarified by temperature-dependent EBIC. Second, the<br />
detection of dislocations between strained-Si and SiGe virtual substrate are shown to overcome<br />
the limitation of depletion region. Third, the observation of leakage sites in high-k gate dielectric<br />
is demonstrated for the characterization of advanced hybrid device structures. Fig.1 illustrated the<br />
application of EBIC on the next<br />
generation CMOS device with highk/metal<br />
gate structure. Local<br />
leakage sites in the gate dielectric<br />
can be directly visualized without<br />
peeling off covering layers and<br />
electrodes.<br />
For prospect, it is optimistic to<br />
image that this multi-dimensional<br />
EBIC technique will be quite<br />
helpful for studying novel materials<br />
and devices in future semiconductor<br />
research.<br />
References:<br />
[1] J. Chen, X. Yuan, T. Sekiguchi, Scanning 30 (2008) 347-353.<br />
116<br />
Poster Session PIR-3<br />
Fig. 1 Right: Illustration of EBIC on MOS with high-k/metal gate.<br />
Left: Top-view EBIC image of leakage sites in pMOS.
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