William Angerer - Department of Physics and Astronomy - University ...

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101 1 .0 c OJ U I r 0.8 L I I ~ OJ 0 0.6 r , u I r c 0 f- ill ill ~ 0.4 ~ "- oJ i/l c 0 "- ~ 0.0 r r 400 500 600 700 800 900 Wavelength (nm) Figure .. 1.9: Transmission coefficient of CaN / Ab03 . The solid line is the data from a normal incident transmission data. The dashed line is a fit to the data using the two slab matrix model with the Sellmeier equation and the measured absorption coefficient as parameters. Reproduced with permission of the copyright owner. Further reproduction prohibited without permission.
102 4.3 Photoluminescence of GaN To characterize the defect structure of GaN we measured the photoluminescence spectra of several GaN samples. The optical layout for the photoluminescence measurement is displayed in Fig. 4.10. A 10 mvV 356 nm beam from a Spectra-Physics model 2025-11 CvV Krypton-Ion laser optically excited electrons from the GaN valence band to the conduction band. The photoluminescent light from the GaN sample was collected using a lens and then focused on the entrance sli~ of a ISA model HR320 single pass monochrometer with a 1200 grooves/mm grating. The light was detected with a Hamamatsu PMT and measured with a lock-in amplifier. The monochrometer slits were set to 0.25 mm to resolve the spectrum to ",.5 nm. A computer recorded and analyzed the data and automatically positioned the monochrometer with a stepper motor. In order to remove the spectral sensitivity of the optical system, we calibrated the system by recording the spectrum from a lamp with a known power spectrum. The calibration lamp is a Optronics model 245C, 45 W tungsten-halogen coiled filament powered by an Optronics model 65DS constant current source. The spectrum recorded from the tungsten lamp was compared with the known spectral irradiance of the lamp to determine the spectral response of the photoluminescence system. The raw data from the GaN photoluminescence spectra was then corrected using the measured spectral response of the system to yield the real photoluminescence spectra. vVe measured the photoluminescence at room temperature and at 82 K. The sam- Reproduced with permission of the copyright owner. Further reproduction prohibited without permission.
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SHG SPECTROSCOPY OF GALLIUM NITRIDE
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COPYRIGHT vVilliam E. Angerer 1998
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ACKNOWLEDGEMENTS I am most grateful
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vi and support over the last three
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viii and we report on photoluminesc
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x 2.5 ~ovel Technique and Apparatus
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Xll 7.3 7.2.3 Registering and Posit
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xiv
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xvi 2.10 Device for measuring ultra
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xviii 6.5 Polarization and propagat
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2 scopies as a probe of these featu
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4 tionallinear microscopy is unable
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6 interference by group velocity mi
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Chapter 2 Introduction to Nonlinear
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10 the electric fields as In this t
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12 SHG is a virtual process, Le. th
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14 2.3 (2) Xijk and Symmetry In gen
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16 X (2) zxx = ,\.zyy v(2) (2) = v(
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18 X~}k(W = 2wo) of our GaN samples
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20 nonlinear element of quartz, X~~
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22 the transmitted wave, E:t'°, Th
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24 150 I I "1 I :) ~ >- -. iii c v
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26 Quartz fundamental Figure 2.5: I
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28 The bound wave, which propagates
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30 1/e 2 its ma.'{imum value. This
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32 Here, x~;!Aw = 2wo) is a constan
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34 simplifications (2.39) and (2.40
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36 nonlinear waves. This model assu
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38 Fourier transform to E /2 (r, w)
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40 3 mm and with the parameters dis
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42 I " i iii iii iii iii iii iii ii
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44 parameter value Bl 2.35728 B2 -0
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46 is measured as a function of tra
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48 send pulse into device \11 input
Page 69 and 70: 50 2.6 Conclusion In this brief sec
Page 71 and 72: 52 LOCK-IN AMPLIAER LOCK-IN AMPLIAE
Page 73 and 74: 54 After polarization, the beam was
Page 75 and 76: 56 PO HR !l o IV team BP Figure 3.3
Page 77 and 78: 58 .. ........... • / ~ '" ~ r --
Page 79 and 80: 60 The production of ultrafast, hig
Page 81 and 82: 62 800 ~ 0 0 J 0 0 0 0 J ~ 0 600~ 0
Page 83 and 84: 64 measurements. Typically, I incre
Page 85 and 86: 66 described below. Note that laser
Page 87 and 88: 68 sentiallya nonlinear optical int
Page 89 and 90: 70 780 800 820 840 860 880 900 920
Page 91 and 92: 72 Unlike the linear spectroscopic
Page 93 and 94: 74 fore, the ratio of these two qua
Page 95 and 96: 76 of :UN is deposited on the Ah03
Page 97 and 98: 78 computer HeNe Las polarizer chop
Page 99 and 100: 80 ~------".... GaN A12a3 index flu
Page 101 and 102: 82 + d I , GaN A12a3 Figure 4.3: Co
Page 103 and 104: 84 4.2 Measurement of Indices of Re
Page 105 and 106: 86 fields at the lh interface to th
Page 107 and 108: 88 traveling wave, i.e. (-1.7) wher
Page 109 and 110: 90 Note that the additional subscri
Page 111 and 112: 92 £b, are defined only at the int
Page 113 and 114: 94 Equations (4.30) and (4.32) are
Page 115 and 116: 96 the calculation of the transmitt
Page 117 and 118: 98 '- -0 OJ N 0.4 o E ~ o Z 0.2 o 2
Page 119: 100 2.0 "'"" "I 1.5 E ::t ~ --c 0 -
Page 123 and 124: 104 a photoluminescence measurement
Page 125 and 126: 106 :J 0.01 0 ~ L ~ 0.008 r- :n :v
Page 127 and 128: 108 0.08 ~. j -i ,-... I I ""I :::l
Page 129 and 130: Chapter 5 Properties of GaN In rece
Page 131 and 132: 112 5.1 Crystal Structure :\ crucia
Page 133 and 134: 114 PJO'tI [{fall Figure 5.1: \Vurz
Page 135 and 136: 116 e 4 r .1 It Figure 5.2: Calcula
Page 137 and 138: 118 Parameter Symbol Value electron
Page 139 and 140: 120 high intrinsic electron concent
Page 141 and 142: 122 equation (5.2), is represented
Page 143 and 144: 124 C6v E E £l. 2C3 2C 3 2C6 2C 6
Page 145 and 146: 126 gap, the nonlinear susceptibili
Page 147 and 148: 128 rrb 10.0 eV -------- 5 9.0 eV r
Page 149 and 150: 130 In> 1m> 1m>
Page 151 and 152: 132 Emission of a photon on the bra
Page 153 and 154: 134 5.5 MOCVD Growth of GaN Our GaN
Page 155 and 156: 136 # dopant thickness mobility car
Page 157 and 158: 138 6.1 Nonlinear Optical Spectrosc
Page 159 and 160: 140 y lab X)lSlaJ / 2m Figure 6.1:
Page 161 and 162: 142 Fig. 6.2 displays the azimuthal
Page 163 and 164: 144 includes the effects of pulse p
Page 165 and 166: 146 6.3 Theory of Nonlinear Optical
Page 167 and 168: 148 L x i d 1 E( 00) air GaN sapphi
Page 169 and 170: 150 wavevector components. The free
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152 z y x E( ro) air GaN Figure 6.5
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154 various free waves and summing
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156 factors are: the nonlinearity o
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158 where v /2 is the group velocit
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160 i N -' '- 0 ::J a 0 o.sf fiftH!
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162 4 ""' ::J en Q) - -' .D 2L ·oJ
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164 approximation. The agreement be
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166 midgap state) could playa role
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168 r: b S ~ r b I rs ~ r b I 0)1 r
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170 in various bonding geometries w
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, 172 .----. ::l U'J Q) ttl 0 '-.,;
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Chapter 7 SHG Microscopy The majori
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176 7.1 Historical Context of Secon
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178 comPJter - - - - - - - - - ~ ,-
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180 second-harmonic light towards t
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182 ~ 20 _____ ~ ____ J -----f- ---
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184 wave at normal incidence is (7.
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186 polarization is negligible for
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chopper AGate B Gate Signal Figure
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190 E 4000 1 c: 0 3000 ~ rJl -' 0 c
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192 depend on two components: a hig
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194 nanorope ~ Figure 7.8: Carbon n
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196 of light reflected from the sam
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198 mean square deviation, of the p
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200 7.3 Calculated SHG Signal from
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202 parameter symbol value laser re
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204 parameter symbol value surface
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Chapter 8 Conclusion In this brief
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208 properties of carbon nanotubes.
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210 that propagate through quartz a
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Appendix B Theory of Nonlinear Resp
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214 Fourier transforming equation (
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216 and (CA) with f.b == t(.:.vo) a
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218 The polarization, et, of the po
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220 and (0.1.,1) respectively. Equa
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Appendix E Effect of Sapphire Miscu
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224 with cosO 0 - sin (} o 1 o (E.3
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226 Let us compare the light transm
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228 , .............................
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230 it ( (fp·top..,(arr (ll, M r "
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232 nal-2.00 tab'(:r[ihi]-:r[ila] )
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234 1 - 2500.0; III - xU]; 1/ ti. t
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Bibliography [1] R. K. Chang~ J. Du
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238 [12] J. QL "V. Angerer, M. S. Y
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240 Diamond, SiC and Wide Bandgap S
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242 [40] M. M. Choy and R. L. Byer,
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244 [55] \V. P. Lin, P. M. Lundquis
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246 [70] J. vV. Yang, J. N. Kunzia,
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248 [85] B. Monemar and O. Lagerste
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250 [99] R. C. Miller, Optical Seco
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252 [114] "V. de HeeL W. S. Bacsa,
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William Angerer - Department of Physics and Astronomy - University ...

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