William Angerer - Department of Physics and Astronomy - University ...

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245 [63] S. Strite and H. MorkQ, CaN, AlN, and InN: A Review, J. Vac. Sci. Technol. B 10, 1237 (1992). [64] S. Strite, M. E. Lin, and H. MorkQ, Progress and Prospects for GaN and the III- V Nitride Semiconductors, Thin Solid Films 231, 197 (1993). [65] ~L A. Khan. J. N. Kuznia, J. M. VaN Hove, D. T. Olson, S. Krishnankutty. and R. N. Kolbas, Growth of High Optical and Electrical Quality GaN Layers Using Low-Pressure Metalorganic Chemical Vapor Deposition, Appl. Phys. Lett. 58. 527 (1991). [66] R. C. Powell, N. E. Lee, Y. W. Kim, and J. E. Greene, Heteroepitaxial Wurzite and Zinc-Blende Structure GaN Grown by Reactive-Ion Molecular-Beam Epitaxy: Growth Kinetics, A1icrostructure, and Properties, J. Appl. Phys. 73. 189 (1993). [67] T. Sasaki and T. ~Iatsuoka, Substrate-Polarity Dependence of Metal-Organic Vapor-Phase Epitaxy-Grown GaN on SiC, J. Appl. Phys. 64, 4531 (1988). [68] T. Sasaki, T. Matsuoka, and A. Katsui, MOVPE-Grown GaN on Polar Planes of 6H-SiC, Appl. Surf. Sci. 41, 504 (1989). [69] NI. E. Lin, S. Strite, A. Agarwal, A. Salvador, G. L. Zhou, N. Teraguchi. A.. Rockett, and H. Morkoc;, GaN Growth on Hydrogen Plasma Cleaned 6H-SiC Substrates, Appl. Phys. Lett. 62, 702 (1993). Reproduced with permission of the copyright owner. Further reproduction prohibited without permission.
246 [70] J. vV. Yang, J. N. Kunzia, Q. C. Chen, M. A. Khan, T. George, ~L De Graef. and S. ~Iahajar, Temperature Mediated Phase Selection During Growth of GaN on (lll)A and (111)B GaAs Substrates, Appl. Phys. Lett. 67,3759 (1995). [71] M. J. Paisley, Z. Sitar, J. 8. Posthill, and R. F. Davis, Growth of Cubic Phase Gallium Nitride by Modified Molecular-Beam Epitaxy, J. Vac. Sci. Tecjnol. .-\ 7. 701 (1989). [72] T. Lei, ~I. Fanciulli, R. J. Molnar, T. D. Moustakas. R. J. Graham, and .J. Scalon. Epitaxial Growth of Zinc-Blende and Wurzite Gallium Nitride Thin Films on (001) Silicon, Appl. Phys. Lett. 59, 944 (1991). [73] T. Lei, T. D. Moustakas, R. J. Graham, Y. He, and S. J. Berkowitz. Epitaxial Growth and Characterization of Zinc-Blende Gallium Nitride on (001) Silicon. J. Appl. Phys. 71, 4933 (1992). [74] B. D. Cullity, Elements of X-ray Diffraction (Addison-vVesley Publishing Company, Inc., Reading, ~IA, 19(8). [75] 1. C. of Crystallography, International Tables for X-ray Crystallography (Kynoch Press, Birmingham, AL, 1968). [76] H. P. Maruska and J. J. Tietjen, , Appl. Phys. Lett. 15, 327 (1969). Reproduced with permission of the copyright owner. Further reproduction prohibited without permission.
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SHG SPECTROSCOPY OF GALLIUM NITRIDE
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COPYRIGHT vVilliam E. Angerer 1998
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ACKNOWLEDGEMENTS I am most grateful
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vi and support over the last three
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viii and we report on photoluminesc
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x 2.5 ~ovel Technique and Apparatus
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Xll 7.3 7.2.3 Registering and Posit
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xiv
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xvi 2.10 Device for measuring ultra
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xviii 6.5 Polarization and propagat
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2 scopies as a probe of these featu
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4 tionallinear microscopy is unable
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6 interference by group velocity mi
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Chapter 2 Introduction to Nonlinear
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10 the electric fields as In this t
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12 SHG is a virtual process, Le. th
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14 2.3 (2) Xijk and Symmetry In gen
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16 X (2) zxx = ,\.zyy v(2) (2) = v(
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18 X~}k(W = 2wo) of our GaN samples
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20 nonlinear element of quartz, X~~
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22 the transmitted wave, E:t'°, Th
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24 150 I I "1 I :) ~ >- -. iii c v
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26 Quartz fundamental Figure 2.5: I
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28 The bound wave, which propagates
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30 1/e 2 its ma.'{imum value. This
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32 Here, x~;!Aw = 2wo) is a constan
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34 simplifications (2.39) and (2.40
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36 nonlinear waves. This model assu
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38 Fourier transform to E /2 (r, w)
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40 3 mm and with the parameters dis
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42 I " i iii iii iii iii iii iii ii
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44 parameter value Bl 2.35728 B2 -0
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46 is measured as a function of tra
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48 send pulse into device \11 input
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50 2.6 Conclusion In this brief sec
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52 LOCK-IN AMPLIAER LOCK-IN AMPLIAE
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54 After polarization, the beam was
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56 PO HR !l o IV team BP Figure 3.3
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58 .. ........... • / ~ '" ~ r --
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60 The production of ultrafast, hig
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62 800 ~ 0 0 J 0 0 0 0 J ~ 0 600~ 0
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64 measurements. Typically, I incre
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66 described below. Note that laser
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68 sentiallya nonlinear optical int
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70 780 800 820 840 860 880 900 920
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72 Unlike the linear spectroscopic
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74 fore, the ratio of these two qua
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76 of :UN is deposited on the Ah03
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78 computer HeNe Las polarizer chop
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80 ~------".... GaN A12a3 index flu
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82 + d I , GaN A12a3 Figure 4.3: Co
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84 4.2 Measurement of Indices of Re
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86 fields at the lh interface to th
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88 traveling wave, i.e. (-1.7) wher
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90 Note that the additional subscri
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92 £b, are defined only at the int
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94 Equations (4.30) and (4.32) are
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96 the calculation of the transmitt
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98 '- -0 OJ N 0.4 o E ~ o Z 0.2 o 2
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100 2.0 "'"" "I 1.5 E ::t ~ --c 0 -
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102 4.3 Photoluminescence of GaN To
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104 a photoluminescence measurement
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106 :J 0.01 0 ~ L ~ 0.008 r- :n :v
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108 0.08 ~. j -i ,-... I I ""I :::l
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Chapter 5 Properties of GaN In rece
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112 5.1 Crystal Structure :\ crucia
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114 PJO'tI [{fall Figure 5.1: \Vurz
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116 e 4 r .1 It Figure 5.2: Calcula
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118 Parameter Symbol Value electron
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120 high intrinsic electron concent
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122 equation (5.2), is represented
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124 C6v E E £l. 2C3 2C 3 2C6 2C 6
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126 gap, the nonlinear susceptibili
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128 rrb 10.0 eV -------- 5 9.0 eV r
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130 In> 1m> 1m>
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132 Emission of a photon on the bra
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134 5.5 MOCVD Growth of GaN Our GaN
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136 # dopant thickness mobility car
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138 6.1 Nonlinear Optical Spectrosc
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140 y lab X)lSlaJ / 2m Figure 6.1:
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142 Fig. 6.2 displays the azimuthal
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144 includes the effects of pulse p
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146 6.3 Theory of Nonlinear Optical
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148 L x i d 1 E( 00) air GaN sapphi
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150 wavevector components. The free
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152 z y x E( ro) air GaN Figure 6.5
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154 various free waves and summing
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156 factors are: the nonlinearity o
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158 where v /2 is the group velocit
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160 i N -' '- 0 ::J a 0 o.sf fiftH!
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162 4 ""' ::J en Q) - -' .D 2L ·oJ
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164 approximation. The agreement be
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166 midgap state) could playa role
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168 r: b S ~ r b I rs ~ r b I 0)1 r
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170 in various bonding geometries w
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, 172 .----. ::l U'J Q) ttl 0 '-.,;
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Chapter 7 SHG Microscopy The majori
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176 7.1 Historical Context of Secon
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178 comPJter - - - - - - - - - ~ ,-
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180 second-harmonic light towards t
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182 ~ 20 _____ ~ ____ J -----f- ---
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184 wave at normal incidence is (7.
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186 polarization is negligible for
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chopper AGate B Gate Signal Figure
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190 E 4000 1 c: 0 3000 ~ rJl -' 0 c
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192 depend on two components: a hig
Page 213 and 214: 194 nanorope ~ Figure 7.8: Carbon n
Page 215 and 216: 196 of light reflected from the sam
Page 217 and 218: 198 mean square deviation, of the p
Page 219 and 220: 200 7.3 Calculated SHG Signal from
Page 221 and 222: 202 parameter symbol value laser re
Page 223 and 224: 204 parameter symbol value surface
Page 225 and 226: Chapter 8 Conclusion In this brief
Page 227 and 228: 208 properties of carbon nanotubes.
Page 229 and 230: 210 that propagate through quartz a
Page 231 and 232: Appendix B Theory of Nonlinear Resp
Page 233 and 234: 214 Fourier transforming equation (
Page 235 and 236: 216 and (CA) with f.b == t(.:.vo) a
Page 237 and 238: 218 The polarization, et, of the po
Page 239 and 240: 220 and (0.1.,1) respectively. Equa
Page 241 and 242: Appendix E Effect of Sapphire Miscu
Page 243 and 244: 224 with cosO 0 - sin (} o 1 o (E.3
Page 245 and 246: 226 Let us compare the light transm
Page 247 and 248: 228 , .............................
Page 249 and 250: 230 it ( (fp·top..,(arr (ll, M r "
Page 251 and 252: 232 nal-2.00 tab'(:r[ihi]-:r[ila] )
Page 253 and 254: 234 1 - 2500.0; III - xU]; 1/ ti. t
Page 255 and 256: Bibliography [1] R. K. Chang~ J. Du
Page 257 and 258: 238 [12] J. QL "V. Angerer, M. S. Y
Page 259 and 260: 240 Diamond, SiC and Wide Bandgap S
Page 261 and 262: 242 [40] M. M. Choy and R. L. Byer,
Page 263: 244 [55] \V. P. Lin, P. M. Lundquis
Page 267 and 268: 248 [85] B. Monemar and O. Lagerste
Page 269 and 270: 250 [99] R. C. Miller, Optical Seco
Page 271 and 272: 252 [114] "V. de HeeL W. S. Bacsa,
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