William Angerer - Department of Physics and Astronomy - University ...

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A
degrease
substrate
et ch s u tGt rate
in H 3P04H2S04
cleaning
procedures
B
heat sample
introduce gas
pre cuss as
to reaction chambers
grow AIN buffer layer
using triethylalumimum (TEA)
and ammonia
pre cuss as diffuse to
sam pie and nucleate crt
sample surface
grow GaN layer
using triethylgallium (TEG)
and ammonia
850°C
vent unreacted gases and
byproducts through exhaust
system
Figure 5.8: Flow diagram for LPMOCVD growth of GaN on Ah03' Diagram A
represents the general procedures for growth. Diagram B represents specific procedures
involved in the growth of the AIN and GaN films. The box with the thick lines
represents the steps in the nucleation of the film
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