William Angerer - Department of Physics and Astronomy - University ...

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145 1000 f r 800 .,...... ~ « '--" 600 >- -i , (JJ c Q) c c.J I V1 40J 200 ~ O~ -50 o Angle of Incidence 50 -J I -: I I l -l i Figure 6.3: SHG as a function of angle of incidence from GaN / Al 2 0 3 . The polarization configuration is p-in/p-out. The minimum of the curve is at ",,1° . which is consistent with the miscut angle determined from SHG rotational measurements. The anisotropy in the SHG response for positive and negative angles is due to the sample miscut [22J. Reproduced with permission of the copyright owner. Further reproduction prohibited without permission.
146 6.3 Theory of Nonlinear Optical Spectroscopy from GaN/ A1 2 0 3 We performed SHG spectroscopy of GaN / Al 2 0 3 over a two photon energy range of 2.6 to 3.4 eV in the s-in/p-out and p-in/p-out polarizations. As Table 6.1 indicates. our SHG measurements of GaN / Al 2 0 3 in the s-in/p-out polarization probe a single second-order susceptibility element, X~~. We also measured SHG from GaN/AI 2 0 3 in the p-in/p-out polarization at several angles of incidence. We fitted these spectra for x~2)x' but were unable to independently determine X~;)z. Determination of nonlinear optical susceptibilities from the SHG spectra requires precise knowledge of the linear optical properties, e.g. the index of refraction and sample thickness. The experiments in chapter 4 provide these numbers. Csing the linear optical properties of our GaN and sapphire samples, we developed a model for second-harmonic pulse propagation through GaN/AI 2 0 3 • The model includes ultrafast nonlinear pulse propagation effects based on the methods developed in 2.-1.2. Accurate determination of the nonlinear susceptibility requires the inel usion of ultrafast effects for two reasons. First, although our GaN samples have thicknesses less than 5 /-Lm. the highly dispersive nature of GaN affects the interference of the bound and free waves. vVe quantify the significance of ultrafast effects by defining the error, (J, with respect to the calculated SHG intensity that neglects these effects Reproduced with permission of the copyright owner. Further reproduction prohibited without permission.
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SHG SPECTROSCOPY OF GALLIUM NITRIDE
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COPYRIGHT vVilliam E. Angerer 1998
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ACKNOWLEDGEMENTS I am most grateful
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vi and support over the last three
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viii and we report on photoluminesc
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x 2.5 ~ovel Technique and Apparatus
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Xll 7.3 7.2.3 Registering and Posit
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xiv
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xvi 2.10 Device for measuring ultra
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xviii 6.5 Polarization and propagat
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2 scopies as a probe of these featu
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4 tionallinear microscopy is unable
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6 interference by group velocity mi
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Chapter 2 Introduction to Nonlinear
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10 the electric fields as In this t
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12 SHG is a virtual process, Le. th
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14 2.3 (2) Xijk and Symmetry In gen
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16 X (2) zxx = ,\.zyy v(2) (2) = v(
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18 X~}k(W = 2wo) of our GaN samples
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20 nonlinear element of quartz, X~~
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22 the transmitted wave, E:t'°, Th
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24 150 I I "1 I :) ~ >- -. iii c v
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26 Quartz fundamental Figure 2.5: I
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28 The bound wave, which propagates
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30 1/e 2 its ma.'{imum value. This
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32 Here, x~;!Aw = 2wo) is a constan
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34 simplifications (2.39) and (2.40
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36 nonlinear waves. This model assu
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38 Fourier transform to E /2 (r, w)
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40 3 mm and with the parameters dis
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42 I " i iii iii iii iii iii iii ii
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44 parameter value Bl 2.35728 B2 -0
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46 is measured as a function of tra
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48 send pulse into device \11 input
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50 2.6 Conclusion In this brief sec
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52 LOCK-IN AMPLIAER LOCK-IN AMPLIAE
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54 After polarization, the beam was
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56 PO HR !l o IV team BP Figure 3.3
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58 .. ........... • / ~ '" ~ r --
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60 The production of ultrafast, hig
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62 800 ~ 0 0 J 0 0 0 0 J ~ 0 600~ 0
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64 measurements. Typically, I incre
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66 described below. Note that laser
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68 sentiallya nonlinear optical int
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70 780 800 820 840 860 880 900 920
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72 Unlike the linear spectroscopic
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74 fore, the ratio of these two qua
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76 of :UN is deposited on the Ah03
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78 computer HeNe Las polarizer chop
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80 ~------".... GaN A12a3 index flu
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82 + d I , GaN A12a3 Figure 4.3: Co
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84 4.2 Measurement of Indices of Re
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86 fields at the lh interface to th
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88 traveling wave, i.e. (-1.7) wher
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90 Note that the additional subscri
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92 £b, are defined only at the int
Page 113 and 114: 94 Equations (4.30) and (4.32) are
Page 115 and 116: 96 the calculation of the transmitt
Page 117 and 118: 98 '- -0 OJ N 0.4 o E ~ o Z 0.2 o 2
Page 119 and 120: 100 2.0 "'"" "I 1.5 E ::t ~ --c 0 -
Page 121 and 122: 102 4.3 Photoluminescence of GaN To
Page 123 and 124: 104 a photoluminescence measurement
Page 125 and 126: 106 :J 0.01 0 ~ L ~ 0.008 r- :n :v
Page 127 and 128: 108 0.08 ~. j -i ,-... I I ""I :::l
Page 129 and 130: Chapter 5 Properties of GaN In rece
Page 131 and 132: 112 5.1 Crystal Structure :\ crucia
Page 133 and 134: 114 PJO'tI [{fall Figure 5.1: \Vurz
Page 135 and 136: 116 e 4 r .1 It Figure 5.2: Calcula
Page 137 and 138: 118 Parameter Symbol Value electron
Page 139 and 140: 120 high intrinsic electron concent
Page 141 and 142: 122 equation (5.2), is represented
Page 143 and 144: 124 C6v E E £l. 2C3 2C 3 2C6 2C 6
Page 145 and 146: 126 gap, the nonlinear susceptibili
Page 147 and 148: 128 rrb 10.0 eV -------- 5 9.0 eV r
Page 149 and 150: 130 In> 1m> 1m>
Page 151 and 152: 132 Emission of a photon on the bra
Page 153 and 154: 134 5.5 MOCVD Growth of GaN Our GaN
Page 155 and 156: 136 # dopant thickness mobility car
Page 157 and 158: 138 6.1 Nonlinear Optical Spectrosc
Page 159 and 160: 140 y lab X)lSlaJ / 2m Figure 6.1:
Page 161 and 162: 142 Fig. 6.2 displays the azimuthal
Page 163: 144 includes the effects of pulse p
Page 167 and 168: 148 L x i d 1 E( 00) air GaN sapphi
Page 169 and 170: 150 wavevector components. The free
Page 171 and 172: 152 z y x E( ro) air GaN Figure 6.5
Page 173 and 174: 154 various free waves and summing
Page 175 and 176: 156 factors are: the nonlinearity o
Page 177 and 178: 158 where v /2 is the group velocit
Page 179 and 180: 160 i N -' '- 0 ::J a 0 o.sf fiftH!
Page 181 and 182: 162 4 ""' ::J en Q) - -' .D 2L ·oJ
Page 183 and 184: 164 approximation. The agreement be
Page 185 and 186: 166 midgap state) could playa role
Page 187 and 188: 168 r: b S ~ r b I rs ~ r b I 0)1 r
Page 189 and 190: 170 in various bonding geometries w
Page 191 and 192: , 172 .----. ::l U'J Q) ttl 0 '-.,;
Page 193 and 194: Chapter 7 SHG Microscopy The majori
Page 195 and 196: 176 7.1 Historical Context of Secon
Page 197 and 198: 178 comPJter - - - - - - - - - ~ ,-
Page 199 and 200: 180 second-harmonic light towards t
Page 201 and 202: 182 ~ 20 _____ ~ ____ J -----f- ---
Page 203 and 204: 184 wave at normal incidence is (7.
Page 205 and 206: 186 polarization is negligible for
Page 207 and 208: chopper AGate B Gate Signal Figure
Page 209 and 210: 190 E 4000 1 c: 0 3000 ~ rJl -' 0 c
Page 211 and 212: 192 depend on two components: a hig
Page 213 and 214: 194 nanorope ~ Figure 7.8: Carbon n
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196 of light reflected from the sam
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198 mean square deviation, of the p
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200 7.3 Calculated SHG Signal from
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202 parameter symbol value laser re
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204 parameter symbol value surface
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Chapter 8 Conclusion In this brief
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208 properties of carbon nanotubes.
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210 that propagate through quartz a
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Appendix B Theory of Nonlinear Resp
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214 Fourier transforming equation (
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216 and (CA) with f.b == t(.:.vo) a
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218 The polarization, et, of the po
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220 and (0.1.,1) respectively. Equa
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Appendix E Effect of Sapphire Miscu
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224 with cosO 0 - sin (} o 1 o (E.3
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226 Let us compare the light transm
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228 , .............................
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230 it ( (fp·top..,(arr (ll, M r "
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232 nal-2.00 tab'(:r[ihi]-:r[ila] )
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234 1 - 2500.0; III - xU]; 1/ ti. t
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Bibliography [1] R. K. Chang~ J. Du
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238 [12] J. QL "V. Angerer, M. S. Y
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240 Diamond, SiC and Wide Bandgap S
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242 [40] M. M. Choy and R. L. Byer,
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244 [55] \V. P. Lin, P. M. Lundquis
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246 [70] J. vV. Yang, J. N. Kunzia,
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248 [85] B. Monemar and O. Lagerste
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250 [99] R. C. Miller, Optical Seco
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252 [114] "V. de HeeL W. S. Bacsa,
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William Angerer - Department of Physics and Astronomy - University ...

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