William Angerer - Department of Physics and Astronomy - University ...

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Parameter Symbol Value
electron mobility f..le 350 cm- 2 / Vs [65J
electron concentration (undoped) ne '" 10 17 cm- 3 [81J
electron concentration (doped) ne '" 10 19 cm- 3 [82J
hole mobility f..lh 20 em -2 IV s [83J
hole concentration nh 4.5xl017 cm- 3
temperature.
Table 5.2: GaN electrical properties
5.2.2 Electronic Properties
Control of the electrical properties of GaN is one of the largest obstacles to improving
GaN electro-optical device properties. U ndoped GaN displays high electron concentrations
(see Table .5.2.)
These high electron concentrations may result from the
formation of native donors that introduce electrons with energies near the valence
band [79]. These donors act as an efficient compensation mechanism that hinders
p-doping of GaN. For example, incorporation of '" 6 x 10 19 cm- 3 Mg acceptors into
the GaN lattice results in a hole concentration of"-' 5 x 10 17 cm- 3 [80J. An overview
of defects in GaN in presented in section 5.3.
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