William Angerer - Department of Physics and Astronomy - University ...

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6.5 Polarization and propagation directions of the nonlinear fields and
second-order polarization in GaN . . . . . . . .
6.6 SHG Spectrum of 1.020 f.Lm GaN sample in the s-in/p-out polarization 159
6.7 SHG Spectrum of 4.885 f.Lm GaN sample in the s-in/p-out polarization 160
6.8 Measured nonlinear susceptibility elements for GaN . . . . . . . . " 162
6.9 SHG Spectrum of 1.020 f.Lm GaN sample in the p-in/p-out polarization 163
6.10 Three photon processes in GaN involving a midgap defect state. 168
6.11 X~;~ of GaN determined by SHG azimuthal scans .. , . . . . . 172
7.1 Experimental setup for SHG microscopy of polycrystalline ZnSe 177
7.2 Experimental setup for nonlinear optical microscopy. . . . . . . 178
7.3 Diagram of Ti:Al 2 0 3 pulse incident on the microscope objective 181
7.-1 SHG rotational symmetry of Si (100) and Si(I11) measured by the
nonlinear optical microscope . . . . . . . . . . . . . . . . . . . . " 182
7.5 Relationship between the optical chopper and photon counter gates 188
7.6 Distribution of pulse voltages from the photon counting P)'-IT 190
7.7 Snubber schematic to reduce current pulse ringing. 191
7.8 Carbon nanotube sample mask ....... 194
7.9 Video microscopy apparatus to align sample 195
7.10 SHG micrograph from mask with deposited carbon nanorope 197
E.l Coordinate system of transmission through GaN/Sapphire . . . . .. 223
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