William Angerer - Department of Physics and Astronomy - University ...

III
read 0.2 /-Lm pit lengths on a 0.4 /-Lm track. The predicted storage density is 15 Cbyte.
Despite predictions of the commercially available short-wavelength laser diodes.
the development of CaN based electro-optic devices has been hindered by a number
of factors; these factors include lack of suitable substrates, difficulty in p-doping
the nitrides, presence of large background electron concentrations, and lack of modern
crystal growth techniques [63]. Only recently have advances by Nakamura and
coworkers [19J in CaN laser diode lifetimes suggested that the goal of commercially
available short-wavelength laser diodes by 2000 is within reach .
.-\lthough the commercial potential for CaN based laser diodes is enormous. we are
concerned with the fundamental optical properties of GaN. Theoretical and experimental
investigations have elucidated the structure of defects levels in CaN and have
contributed to our understanding of self-compensation in GaN. Because a thorough
understanding of material properties is essential for the interpretation of our spectroscopic
data, in this chapter we briefly review the properties of GaN. The chapter
is organized as follows. First we discuss the structural and electronic properties of
GaN with an emphasis on the electronic properties near the valence band maximum
and conduction band minimum. We then summarize the experimental and theoretical
investigations of defects in GaN. Finally, we apply group theory to calculate all
resonantly enhanced second-order nonlinear optical process in GaN.
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