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ATMega chip full datasheet - UCSD Department of Physics

ATMega chip full datasheet - UCSD Department of Physics

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ATmega48A/PA/88A/PA/168A/PA/328/PTable 28-16.Command Byte Bit CodingCommand ByteCommand Executed0000 1000 Read Signature Bytes and Calibration byte0000 0100 Read Fuse and Lock bits0000 0010 Read Flash0000 0011 Read EEPROM28.7 Parallel Programming28.7.1 Enter Programming ModeThe following algorithm puts the device in Parallel (High-voltage) Programming mode:1. Set Prog_enable pins listed in Table 28-14 on page 304 to “0000”, RESET pin to 0V andV CC to 0V.2. Apply 4.5 - 5.5V between V CC and GND.Ensure that V CC reaches at least 1.8V within the next 20 µs.3. Wait 20 - 60 µs, and apply 11.5 - 12.5V to RESET.4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has beenapplied to ensure the Prog_enable Signature has been latched.5. Wait at least 300 µs before giving any parallel programming commands.6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.If the rise time <strong>of</strong> the V CC is unable to fulfill the requirements listed above, the following alternativealgorithm can be used.1. Set Prog_enable pins listed in Table 28-14 on page 304 to “0000”, RESET pin to 0V andV CC to 0V.2. Apply 4.5 - 5.5V between V CC and GND.3. Monitor V CC , and as soon as V CC reaches 0.9 - 1.1V, apply 11.5 - 12.5V to RESET.4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has beenapplied to ensure the Prog_enable Signature has been latched.5. Wait until V CC actually reaches 4.5 -5.5V before giving any parallel programmingcommands.6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.28.7.2 Considerations for Efficient ProgrammingThe loaded command and address are retained in the device during programming. For efficientprogramming, the following should be considered.• The command needs only be loaded once when writing or reading multiple memory locations.• Skip writing the data value 0xFF, that is the contents <strong>of</strong> the entire EEPROM (unless theEESAVE Fuse is programmed) and Flash after a Chip Erase.• Address high byte needs only be loaded before programming or reading a new 256 wordwindow in Flash or 256 byte EEPROM. This consideration also applies to Signature bytesreading.8271D–AVR–05/11305

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