Ultralow power ARM-based 32-bit MCU with 384 Kbytes Flash ... - Keil

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Electrical characteristicsSTM32L162VD, STM32L162ZD, STM32L162QD, STM32L162RD6.3.3 Embedded internal reference voltageThe parameters given in Table 13 are based on characterization results, unless otherwisespecified.Table 13.Embedded internal reference voltageSymbol Parameter Conditions Min Typ Max Unit(1)V REFINT out Internal reference voltage – 40 °C < T J < +105 °C 1.202 1.224 1.242 VI REFINTInternal reference currentconsumption1.4 2.3 µAT VREFINT Internal reference startup time 2 3 msV VREF_MEASV DDA and V REF+ voltage duringV REFINT factory measure2.99 3 3.01 VA VREF_MEAST Coeff(3)A Coeff(3)Accuracy of factory-measuredV REF value (2)Temperature coefficientIncluding uncertaintiesdue to ADC andV DDA /V REF+ values–40 °C < T J < +105 °C 20 500 °C < T J < +50 °C 20±5 mVppm/°CLong-term stability 1000 hours, T= 25 °C 1000 ppmVDDCoeff (3) Voltage coefficient 3.0 V < V DDA < 3.6 V 2000 ppm/VT S_vrefint(3)(4)T ADC_BUF(3)I BUF_ADC(3)ADC sampling time whenreading the internal referencevoltageStartup time of reference voltagebuffer for ADCConsumption of referencevoltage buffer for ADC5 10 µs10 µs13.5 25 µA(3)I VREF_OUT VREF_OUT output current (5) 1 µA(3)C VREF_OUT VREF_OUT output load 50 pFI LPBUF(3)V REFINT_DIV1(3)V REFINT_DIV2(3)Consumption of referencevoltage buffer for VREF_OUTand COMP730 1200 nA1/4 reference voltage 24 25 261/2 reference voltage 49 50 51V REFINT_DIV3(3) 3/4 reference voltage 74 75 761. Tested in production;2. The internal V REF value is individually measured in production and stored in dedicated EEPROM bytes.3. Guaranteed by design, not tested in production.4. Shortest sampling time can be determined in the application by multiple iterations.5. To guarantee less than 1% VREF_OUT deviation.%V REFINT54/124 Doc ID 022268 Rev 2
STM32L162VD, STM32L162ZD, STM32L162QD, STM32L162RDElectrical characteristics6.3.4 Supply current characteristicsTable 14.The current consumption is a function of several parameters and factors such as theoperating voltage, ambient temperature, I/O pin loading, device software configuration,operating frequencies, I/O pin switching rate, program location in memory and executedbinary code. The current consumption is measured as described in Figure 10: Currentconsumption measurement scheme.All Run-mode current consumption measurements given in this section are performed with areduced code that gives a consumption equivalent to Dhrystone 2.1 code.Maximum current consumptionThe MCU is placed under the following conditions:● V DD = 3.6 V● All I/O pins are in input mode with a static value at V DD or V SS (no load)● All peripherals are disabled except when explicitly mentioned● The Flash memory access time is adjusted depending on f HCLK frequency and voltagerange● Prefetch and 64-bit access are enabled in configurations with 1 wait stateThe parameters given in Table 14, Table 10 and Table 12 are derived from tests performedunder ambient temperature and V DD supply voltage conditions summarized in Table 10.Current consumption in Run mode, code with data processing running from FlashSymbol Parameter Conditions f HCLK TypMax (1)55 °C 85 °C 105 °CUnitI DD(RunfromFlash)Supplycurrent inRun mode,codeexecutedfrom FlashV CORE =1.2 VVOS[1:0] = 11Range 3,f HSE = f HCLKup to 16 MHz,includedf HSE = f HCLK /2above 16 MHz(PLL ON) (2)HSI clock source(16 MHz)Range 2,V CORE =1.5 VVOS[1:0] = 10Range 1,V CORE =1.8 VVOS[1:0] = 01Range 2,V CORE =1.5 VVOS[1:0] = 10Range 1,V CORE =1.8 VVOS[1:0] = 011 MHz 360 500 500 5002 MHz 620 750 750 7504 MHz 1070 1200 1200 12004 MHz 1.30 1.6 1.6 1.68 MHz 2.4 2.9 2.9 2.916 MHz 4.6 5.2 5.2 5.28 MHz 2.9 3.5 3.5 3.516 MHz 5.7 6.5 6.5 6.532 MHz 10.4 12 12 1216 MHz 4.5 5.2 5.2 5.232 MHz 10.9 12.3 12.3 12.3µAmAMSI clock, 65 kHzRange 3,65 kHz 0.05 0.079 0.092 0.13MSI clock, 524 kHz V CORE =1.2 V 524 kHz 0.17 0.2 0.21 0.25MSI clock, 4.2 MHzVOS[1:0] = 114.2 MHz 1.0 1.1 1.1 1.21. Based on characterization, not tested in production, unless otherwise specified.2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).Doc ID 022268 Rev 2 55/124
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STM32L162VD STM32L162ZDSTM32L162QD
Page 3 and 4: STM32L162VD, STM32L162ZD, STM32L162
Page 6: List of tablesSTM32L162VD, STM32L16
Page 24 and 25: Functional overviewSTM32L162VD, STM
Page 26 and 27: Functional overviewSTM32L162VD, STM
Page 28 and 29: Pin descriptionsSTM32L162VD, STM32L
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Page 48 and 49: Electrical characteristicsSTM32L162
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Electrical characteristicsSTM32L162
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Package characteristicsSTM32L162VD,
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Ordering information schemeSTM32L16
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STM32L162VD, STM32L162ZD, STM32L162
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Ultralow power ARM-based 32-bit MCU with 384 Kbytes Flash ... - Keil

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