Ultralow power ARM-based 32-bit MCU with 384 Kbytes Flash ... - Keil

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Electrical characteristicsSTM32L162VD, STM32L162ZD, STM32L162QD, STM32L162RDFigure 22.Synchronous non-multiplexed PSRAM write timings Table 41. Synchronous non-multiplexed PSRAM write timings (1)(2)Symbol Parameter Min Max Unitt w(CLK) FSMC_CLK period 2*T HCLK nst d(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x = 0...2) TBD nst d(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x = 0...2) TBD nst d(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low TBD nst d(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high TBD nst d(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x = 16...25) 0 nst d(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x = 16...25) TBD nst d(CLKL-NWEL) FSMC_CLK low to FSMC_NWE low TBD nst d(CLKL-NWEH) FSMC_CLK low to FSMC_NWE high TBD nst d(CLKL-Data) FSMC_D[15:0] valid data after FSMC_CLK low TBD nst su(NWAITV-CLKH) FSMC_NWAIT valid before FSMC_CLK high TBD nst h(CLKH-NWAITV) FSMC_NWAIT valid after FSMC_CLK high TBD nst d(CLKL-NBLH) FSMC_CLK low to FSMC_NBL high TBD ns1. C L = 15 pF.2. Preliminary values.86/124 Doc ID 022268 Rev 2
STM32L162VD, STM32L162ZD, STM32L162QD, STM32L162RDElectrical characteristics6.3.10 EMC characteristicsSusceptibility tests are performed on a sample basis during device characterization.Functional EMS (electromagnetic susceptibility)While a simple application is executed on the device (toggling 2 LEDs through I/O ports). thedevice is stressed by two electromagnetic events until a failure occurs. The failure isindicated by the LEDs:● Electrostatic discharge (ESD) (positive and negative) is applied to all device pins untila functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.● FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V DD andV SS through a 100 pF capacitor, until a functional disturbance occurs. This test iscompliant with the IEC 61000-4-4 standard.A device reset allows normal operations to be resumed.The test results are given in Table 42. They are based on the EMS levels and classesdefined in application note AN1709.Table 42.EMS characteristicsSymbol Parameter ConditionsLevel/ClassV FESDVoltage limits to be applied on any I/O pin toinduce a functional disturbanceV DD = 3.3 V, LQFP100, T A = +25 °C,f HCLK = 32 MHzconforms to IEC 61000-4-22BV EFTBFast transient voltage burst limits to beapplied through 100 pF on V DD and V SSpins to induce a functional disturbanceV DD = 3.3 V, LQFP100, T A = +25 °C,f HCLK = 32 MHzconforms to IEC 61000-4-44ADesigning hardened software to avoid noise problemsEMC characterization and optimization are performed at component level with a typicalapplication environment and simplified MCU software. It should be noted that good EMCperformance is highly dependent on the user application and the software in particular.Therefore it is recommended that the user applies EMC software optimization andprequalification tests in relation with the EMC level requested for his application.Software recommendationsThe software flowchart must include the management of runaway conditions such as:● Corrupted program counter● Unexpected reset● Critical data corruption (control registers...)Doc ID 022268 Rev 2 87/124
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Functional overviewSTM32L162VD, STM
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Functional overviewSTM32L162VD, STM
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Pin descriptionsSTM32L162VD, STM32L
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Ultralow power ARM-based 32-bit MCU with 384 Kbytes Flash ... - Keil

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