Ultralow power ARM-based 32-bit MCU with 384 Kbytes Flash ... - Keil

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Electrical characteristicsSTM32L162VD, STM32L162ZD, STM32L162QD, STM32L162RD6.3.7 PLL characteristicsThe parameters given in Table 30 are derived from tests performed under ambienttemperature and V DD supply voltage conditions summarized in Table 10.Table 30.SymbolPLL characteristicsParameterValueMin Typ Max (1)f PLL_INPLL input clock duty cycle 45 55 %PLL input clock (2)2 24 MHzf PLL_OUT PLL output clock 2 32 MHzt LOCKWorst case PLL lock timePLL input = 2 MHzPLL VCO = 96 MHz1. Based on characterization, not tested in production.Unit100 130 µsJitter Cycle-to-cycle jitter ± 600 psI DDA (PLL) Current consumption on V DDA 220 450I DD (PLL) Current consumption on V DD 120 1502. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible withthe range defined by f PLL_OUT .µA6.3.8 Memory characteristicsThe characteristics are given at T A = -40 to 105 °C unless otherwise specified.RAM memoryTable 31.RAM and hardware registersSymbol Parameter Conditions Min Typ Max UnitVRM Data retention mode (1)STOP mode (or RESET) 1.65 V1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardwareregisters (only in Stop mode).74/124 Doc ID 022268 Rev 2
STM32L162VD, STM32L162ZD, STM32L162QD, STM32L162RDElectrical characteristicsFlash memoryTable 32.Flash memory characteristicsSymbol Parameter Conditions Min Typ Max (1)UnitV DDt progI DDOperating voltageRead / Write / EraseProgramming time forword or half-pageAverage current duringthe whole programming /erase operationMaximum current (peak)during the whole programming/ erase operation1.65 3.6 VErasing 3.28 3.94msProgramming 3.28 3.94600 TBD µAT A = 25 °C, V DD = 3.6 V1.5 TBD mA1. Guaranteed by design, not tested in production.Table 33.Flash memory endurance and data retentionSymbol Parameter ConditionsMin (1)ValueTyp MaxUnitN CYC(2)Cycling (erase / write )Program memoryCycling (erase / write )EEPROM data memoryT A = -40°C to105 °C10300kcyclest RET(2)Data retention (program memory) after10 kcycles at T A = 85 °CData retention (EEPROM data memory)after 300 kcycles at T A = 85 °CData retention (program memory) after10 kcycles at T A = 105 °CData retention (EEPROM data memory)after 300 kcycles at T A = 105 °CT RET = +85 °CT RET = +105 °C30301010years1. Based on characterization not tested in production.2. Characterization is done according to JEDEC JESD22-A117.Doc ID 022268 Rev 2 75/124
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STM32L162VD STM32L162ZDSTM32L162QD
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STM32L162VD, STM32L162ZD, STM32L162
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List of tablesSTM32L162VD, STM32L16
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Page 24 and 25: Functional overviewSTM32L162VD, STM
Page 26 and 27: Functional overviewSTM32L162VD, STM
Page 28 and 29: Pin descriptionsSTM32L162VD, STM32L
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Page 48 and 49: Electrical characteristicsSTM32L162
Page 114 and 115: Package characteristicsSTM32L162VD,
Page 122 and 123: Ordering information schemeSTM32L16
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Ultralow power ARM-based 32-bit MCU with 384 Kbytes Flash ... - Keil

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