III International Conference

PP-I-52«AUTOCATALYTICAL» EFFECT OF INCREASE OF GROWTH RATE OFGe x Si 1-x LAYERS IN MIXED HYDRIDE AND DICHLORINE-SILANE PROCESSESIN LASER AND PULSE MODESTimoshenkov S.P. 1 , Artemov E.I. 1 , Prokop’ev E.P. 1, 21 Moscow Institute Electronics Technology (Technical University), Moscow, Russia2 A.I. Alikhanov Institute Theoretical and Experimental Physics, Moscow, RussiaE-mail:epprokopiev@mail.ruSi-Ge solid solutions are widely used in manufacturing of heterojunction-based bipolartransistors and in modern technologies of opto-, nano- and microelectronics [1-4]. Epitaxialgrowth in stationary mode or in laser and impulse mode of hydride mixed and dichlorinesilaneprocesses with the using of GeH 4 +SiH 4 and GeH 4 +SiH 2 Cl 2 gas mixtures are usuallyused for the deposition of Ge x Si 1-x layers. It was determined [1, 2] that the presence ofgermane in the gas mixture sharply increases the growth rate of Ge x Si 1-x layers as comparedwith the growth rate of Ge layer and Si layer separately, i.e. the catalytic effect is observed[1, 2]. In the case of hydride process the growth rate increases approximately in 10 times dueto the catalytic effect, while in the dichlorine-silane mode V p increases approximately in twoorders of magnitude.The introduced reaction schemes of growth processes of Ge x Si 1-x layers naturally explainthe catalytic effect of increase acceleration of growth rate of germanium layers deposited ingermane-silane and germane-dichlorine-silane processes in laser and impulse modes and thedecrease of the J parameter of the growth model that were revealed during the experiments[1, 2]. The calculation of constant J using formula (1) with given P j at T=625 o C has shownthat parameter J isn’t constant if P GeH4 varies. It shows that the growth rate in experimentswith GeH 4 and SiH 2 Cl 2 isn’t limited by adsorption phase only but it can be limited by otherprocesses such as gaseous kinetics, surface nucleation, desorption of oxygen and chlorine.References1. P.M.Carone, J.C.Sturm, P.V.Schwartz // Appl. Phys. Letters. 1990. Vol.56. №13. P.1273.2. B.S.Meyerson, K.J.Uram, F.K.Legouers // Appl. Phys. Letters. 1988. Vol.53. №13. P.2555.3. E.P.Prokop’ev, S.P.Timoshenkov, V.V.Kalugin, V.I.Grafutin // Materials Sciences Transactions.2004. №6. С.8. (see also http://www. prokopep.narod.ru).101