testing

▍
BIOS Setup
“Advance DRAM Configuration” sub-menu to be determined by BIOS based on the configurations
on the SPD. Selecting [Manual] allows users to configure the DRAM timings
and the following related “Advance DRAM Configuration” sub-menu manually.
▶Advance DRAM Configuration
Press to enter the sub-menu.
▶CH1/ CH2 1T/2T Memory Timing
This item controls the SDRAM command rate. Select [1N] makes SDRAM signal
controller to run at 1N (N=clock cycles) rate. Selecting [2N] makes SDRAM signal
controller run at 2N rate.
▶CH1/ CH2 CAS Latency (CL)
This controls the CAS latency, which determines the timing delay (in clock cycles)
before SDRAM starts a read command after receiving it.
▶CH1/ CH2 tRCD
When DRAM is refreshed, both rows and columns are addressed separately. This
setup item allows you to determine the timing of the transition from RAS (row address
strobe) to CAS (column address strobe). The less the clock cycles, the faster
the DRAM performance.
▶CH1/ CH2 tRP
This setting controls the number of cycles for Row Address Strobe (RAS) to be
allowed to precharge. If insufficient time is allowed for the RAS to accumulate its
charge before DRAM refresh, refresh may be incomplete and DRAM may fail to
retain data. This item applies only when synchronous DRAM is installed in the system.
▶CH1/ CH2 tRAS
This setting determines the time RAS takes to read from and write to memory cell.
▶CH1/ CH2 tRFC
This setting determines the time RFC takes to read from and write to a memory
cell.
▶CH1/ CH2 tWR
Minimum time interval between end of write data burst and the start of a precharge
command. Allows sense amplifiers to restore data to cells.
▶CH1/ CH2 tWTR
Minimum time interval between the end of write data burst and the start of a column-read
command. It allows I/O gating to overdrive sense amplifiers before read
command starts.
▶CH1/ CH2 tRRD
Specifies the active-to-active delay of different banks.
▶CH1/ CH2 tRTP
Time interval between a read and a precharge command.
▶CH1/
CH2 tFAW
This item is used to set the tFAW timing.
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