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Bhavin Shah<br />

(852) 2800-8538<br />

bhavin.a.shah@jpmorgan.com<br />

Asia Pacific Equity Research<br />

20 April 2009<br />

film layer. The morphology, or physical structure, of the resulting layer affects<br />

efficiency and other characteristics of the final cell.<br />

Figure 148: Sputtering diagram<br />

Source: Wikipedia.<br />

CIGS absorber layer<br />

In CIGS thin film, the critical absorber layer consists of a complex alloy of copper,<br />

indium, gallium, and selenium. Copper, indium, and selenium (CIS) exhibits a high<br />

degree of light absorption, requiring a very thin layer to capture maximum energy<br />

from incident light, and is thus a good material for use in PV cells. However, the<br />

band-gap of CIS is 1eV, below an optimal band-gap of 1.4-1.5eV for the solar<br />

spectrum. The addition of gallium is a means to raise the cell band-gap from 1eV up<br />

to 1.7eV, closer to that of the solar spectrum and therefore increase cell conversion<br />

efficiency.<br />

Various processes have been developed in the lab to form CIGS layers. The most<br />

common approach is to use either thermal co-evaporation or sputtering, whereby<br />

constituent elements are deposited in precise concentrations forming a layer 2-3<br />

microns thick on the molybdenum coated substrate. Nanosolar, a private startup, is<br />

developing a novel approach to manufacture CIGS cells utilizing nanoparticles in a<br />

proprietary process that resembles ink-jet printing.<br />

Deposition of CIGS can occur simultaneously with all four components applied<br />

during a single step or in multiple steps, which typically involves the initial<br />

deposition of a copper or selenium rich precursor layer, followed by the addition of<br />

any deficient elements to bring the thin film to desired final composition. Irrespective<br />

of the process used, the critical ratio of copper to indium and gallium should be in the<br />

range of 0.86-0.96 to produce a high efficiency cell. Varying the deposition rate of<br />

gallium during CIGS processing allows for grading the band-gap along the depth of<br />

the layer. Higher band-gap at the front and at the back of the layer increases overall<br />

efficiency by creating a band-gap profile that can absorb a larger light spectrum and<br />

minimize back recombination.<br />

Window layer<br />

As the name suggests, the window layer is an optically transparent material that<br />

allows light to pass though to the absorber layer and acts as an “N-type” electron<br />

source in the cell junction. CdS, is commonly used as the window layer in CIGS cells<br />

as it results in high cell efficiency and is typically applied using a relatively low-cost<br />

chemical bath deposition process. Cadmium is a toxic substance; however, only a<br />

247

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