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Workshopband als PDF - Mpc.belwue.de

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MPC-WORKSHOP FEBRUAR 2013<br />

Figure 4: Readout circuit diagram. The chain is consists of an<br />

integrator, track-and-hold stage and an ADC.<br />

B. Readout<br />

The readout chain consists of an integrator, a trackand-hold<br />

stage, and an ADC. Figure 4 shows the<br />

readout diagram.<br />

The stability of voltage at the output no<strong>de</strong> of the<br />

sensor core significantly affects the linearity performance.<br />

Hence, an active stage with feedback is preferred<br />

to keep this voltage constant during operation.<br />

The integrator topology has a number of advantages<br />

for this task. First, it serves as a low-pass filter and<br />

suppresses noise. Second, the voltage of the input<br />

no<strong>de</strong> is kept constant due to feedback. Finally and<br />

most importantly, the feedback loop only accommodates<br />

a capacitor which is stress insensitive. The feedback<br />

behavior remains the same un<strong>de</strong>r varying stress<br />

unlike resistive feedback structures.<br />

A two stage miller op-amp is used for the integrator.<br />

The amplifier is <strong>de</strong>signed to remain within acceptable<br />

limits un<strong>de</strong>r stress values up to 200 MPa. This may<br />

cause a mobility change up to ±15 %, <strong>de</strong>pending on<br />

the direction of the stress vector. The fundamental<br />

practice is to place all transistors of the same type in<br />

the same direction. Therefore, the parameter changes<br />

in the differential branches are cancelled out and it is<br />

easier to take account of a global mobility change for<br />

all transistors of the same type. Further measures are<br />

taken for higher stress insensitivity, as gain and phase<br />

margin are explicitly affected. The phase margin is<br />

pushed above 60° at the cost of higher power consumption.<br />

The minimum gain is set to be 80 dB for<br />

minimizing the voltage drift at the input no<strong>de</strong> un<strong>de</strong>r<br />

stress.<br />

The track-and-hold circuit is intrinsically not affected<br />

by stress. The size of the capacitor is selected consi<strong>de</strong>ring<br />

the load of the integrator and the kickback of<br />

the ADC. Complementary switches with charge injection<br />

cancellation are used.<br />

A 10-bit successive approximation register ADC<br />

from the IMS CHIPS intellectual property library is<br />

used for digitization. The ADC has a rail-to-rail input<br />

range and requires 20 clock cycles for one complete<br />

conversion. The stress insensitivity of the <strong>de</strong>vice is<br />

established by careful layout and <strong>de</strong>sign measures.<br />

Figure 5: Digital controller block diagram. Conceptual diagram is<br />

<strong>de</strong>duced from VHDL co<strong>de</strong> and simplified for clarity.<br />

C. Digital Controller<br />

The management of the analog blocks and external<br />

communication is to be done by the <strong>de</strong>signed controller.<br />

It is written in VHDL and realized using silicon<br />

compiling tools. Figure 5 shows the controller block<br />

diagram.<br />

The readout timing <strong>de</strong>termines the post-readout calculation<br />

and affects the overall performance. The<br />

controller supports external programming which enables<br />

testing different cases on silicon. The timing can<br />

be adjusted as precise as one pulse of system clock.<br />

Fine tuning of pulse widths and sequence of activities<br />

enable optimization of important system performance<br />

figures such as sensor bandwidth, noise performance,<br />

and dynamic range.<br />

The number of pads is minimized by serializing the<br />

sensor I/O’s. The data exchange with external electronics<br />

is done via two serial synchronous interfaces<br />

that are used for sensor configuration and ADC data<br />

read-out.<br />

IV. IMPLEMENTATION<br />

Several intrinsic and extrinsic restrictions are present<br />

in layout level due to the gate array technology and<br />

stress exposure. All circuits except stress sensor cores<br />

are constructed with same-oriented transistors due to<br />

gate array technology. Differential branches in the<br />

analog and digital circuitry benefit from uniform<br />

alignment as stress effects are nulled out. The stress<br />

sensor cores are built using the special [110], [1¯10],<br />

[100], and [010] oriented transistors in the used gate<br />

array master. Figure 6 illustrates the orthogonal transistor<br />

pairs in the master used for this work.<br />

Analog and digital circuits are implemented in their<br />

indigenous regions resulting from the technology. The<br />

wells and supplies of analog and digital domains are<br />

separated in or<strong>de</strong>r to minimize crosstalk. Chip size is<br />

4.5 mm x 4.5 mm.<br />

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