Program - Brookhaven National Laboratory

and the neutron and proton emission spectra for incident energies up to 150 MeV are calculated with the
above-mentioned method. The theoretical results are compared with the existing data. For the cross
sections and angular distributions, the calculated results are in good agreement with the experimental
data. For the emission spectra, the calculated results can reproduce the experimental data well for higher
emission energies, while they underestimate the experimental data for lower emission energies. The reason
of the discrepancy is that some other reaction channels except the breakup channel may contribute to this
energy region.
[1] M. Yahiro, N. Nakano, Y. Iseri and M. Kamimura, Prog. Theor. Phys. 67, 1467 (1982). [2] T.
Matsumoto et al., Phys. Rev. C 83, 064611 (2011). [3] A. Moro et al., Phys. Rev. C 65, 011602 (2001).
[4] T. Matsumoto, T. Kamizato, K. Ogata, Y. Iseri, E. Hiyama, M. Kamimura and M. Yahiro, Phys. Rev.
C 68, 064607 (2003). [5] Y. Sakuragi, M. Yahiro, and M. Kamimura, Prog. Theor. Phys. Suppl. 89, 136
(1986).
Session JD Space Applications
Wednesday March 6, 2013
Room: Empire West at 10:30 AM
JD 1 10:30 AM
Accelerator Testing for Neutron-Induced Failures in Semiconductor Devices
S. A. Wender
Los Alamos National Laboratory
Neutron-induced failures in semiconductor devices are an increasing concern in the semiconductor industry.
Understanding these failures involves several areas of nuclear science including reaction rate measurements,
modeling and simulations. Neutrons are produced in the upper atmosphere by cosmic-ray bombardment
of nuclei in the air. Because the neutrons are uncharged, they have long mean-free paths and can reach
aircraft altitudes and below. Neutron interactions in semiconductor devices produce ionized recoils or
reaction products that deposit charge in the vicinity of nodes and cause the devices to fail. These types of
failures include bit flips, latchups, burnout etc. Predicting the failure rate depends on knowing the neutron
flux in the environment of the semiconductor device and the response of the device to neutrons. To acurately
model the device response, neutron induced cross sections are needed for the materials in the semiconductor
devices. Many semiconductor companies have measured the system response at an accelerated rate by using
the high-energy Los Alamos Neutron Science Center (LANSCE) spallation neutron source. The LANSCE
source produces a neutron spectrum that is very similar in shape to the neutron spectrum produced by
cosmic rays in the earth’s atmosphere but is approximately 108 times more intense than the sea-level
neutron flux. This acceleration factor allows testing of semiconductor devices to measure their response,
and to develop and test failure models and mitigation approaches.
JD 2 11:00 AM
Nuclear Reaction Models Responsible for Simulation of Neutron-Induced Soft Errors in
Microelectronics
Yukinobu Watanabe, Shin-ichiro Abe
Department of Advanced Energy Engineering Science, Kyushu University, Japan
142