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Guide to STN Patent Databases – Basic Version - Paton - TU Ilmenau

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264<br />

<strong>Guide</strong> <strong>to</strong> <strong>STN</strong> <strong>Patent</strong> <strong>Databases</strong><br />

35 Legal status search example<br />

35.1 Example 1<br />

We are interested in the current legal status of various members of the patent family of the US patent numbered<br />

6,479,876.<br />

Note: The patent databases with legal status information allow searching by publication or application number.<br />

Appropriate DISPLAY formats for the legal status are available.<br />

The details available vary between the databases.<br />

35.1.1 Search in INPADOCDB<br />

=> FIL INPADOCDB<br />

FILE 'INPADOCDB' ENTERED<br />

COPYRIGHT (C) 2007 European <strong>Patent</strong> Office / FIZ Karlsruhe<br />

=> S US6479876/PN<br />

L1 1 US6479876/PN<br />

=> D FFAM<br />

SEARCH with the patent or application number. The legal status<br />

can be displayed e.g. by D MAX or D ALL LS or D LS (legal status<br />

field only).<br />

If there is a patent family with few members it is more effective<br />

<strong>to</strong> use a family display format with legal status information for<br />

all members (if the full information is needed). LFAM or FFAM<br />

are possible. The IFAM format would have even more details<br />

(Indented Family Format)<br />

L1 ANSWER 1 OF 1 INPADOCDB COPYRIGHT 2007 EPO/FIZ KA on <strong>STN</strong><br />

-----------<br />

MEMBER 1<br />

-----------<br />

AN 21397282 INPADOCDB UP 20070719 UW 200729<br />

TI Vertical power MOSFET.<br />

Vertikaler Leistungs-MOSFET.<br />

TL English; German<br />

IN TIHANYI, JENOE, DR.-ING., 85551 KIRCHHEIM, DE; DEBOY, GERALD,<br />

DR.RER.NAT., 82008 UNTERHACHING, DE<br />

INS TIHANYI JENOE DR ING, DE; DEBOY GERALD DR RER NAT, DE<br />

PA SIEMENS AG, 80333 MUENCHEN, DE<br />

PAS SIEMENS AG, DE<br />

DT <strong>Patent</strong><br />

PI DE 19730759 C1 19980903<br />

PIT DEC1 PATENT SPECIFICATION (FIRST PUBL.) [FROM 1,400,000 ON]<br />

FDT DED1 Grant of a patent without 'OFFENLEGUNGSSCHRIFT'<br />

DAV 19980903 printed-with-grant<br />

STA GRANTED<br />

AI DE 1997-19730759 A 19970717<br />

AIT DEA <strong>Patent</strong> application<br />

PRAI DE 1997-19730759 A 19970717 (DEA)<br />

PRAIT DEA <strong>Patent</strong> application<br />

IC.V 6<br />

ICM H01L0029-78<br />

IPCR H01L0021-336 [I,A]; H01L0029-167 [I,A]; H01L0029-32 [I,A]; H01L0029-76<br />

[I,A]; H01L0029-78 [I,A]; H01L0031-062 [I,A]<br />

H01L0021-02 [I,C*]; H01L0029-02 [I,C*]; H01L0029-66 [I,C*]; H01L0031-06<br />

[I,C*]<br />

EPC H01L0029-78B2; H01L0029-06B2B3R2; H01L0029-167; H01L0029-32<br />

FA AB; AI; AN; DAV; DT; EPC; ICM; IN; INS; IPC; IPCR; PA; PAS; PI; PIT;<br />

PRAI; REP; TI<br />

CHG EPC C

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