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Proceedings of the European Summer School of Photovoltaics 4 – 7 ...

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PIF:PCBM (1:1)<br />

PIF:PCBM (2:1)<br />

Current density (mA/cm 2 )<br />

0,04<br />

0,02<br />

0,00<br />

Current density (mA/cm 2 )<br />

0,04<br />

0,02<br />

0,00<br />

-0,02<br />

-0,2 0,0 0,2 0,4 0,6 0,8 1,0<br />

Voltage (V)<br />

-0,02<br />

-0,2 0,0 0,2 0,4 0,6 0,8 1,0<br />

Voltage (V)<br />

Fig. 7. Current-voltage characteristics <strong>of</strong> loaded junctions <strong>of</strong> PIF:PCBM (1:1) (left) and PIF:PCBM (2:1) (right)<br />

Current density |J| (mA/cm 2 )<br />

10<br />

1<br />

0,1<br />

0,01<br />

1E-3<br />

P3HT:PCBM (1:1)<br />

PIF:PCBM (2:1)<br />

PIF:PCBM (1:1)<br />

1E-4<br />

-0,2 0,0 0,2 0,4 0,6 0,8 1,0<br />

Voltage (V)<br />

Fig. 8. Absolute value <strong>of</strong> current density against generated voltage<br />

for three junctions created in first part <strong>of</strong> experiment: PIF:PCBM<br />

(1:1), PIF:PCBM (2:1) and P3HT:PCBM (1:1), depicted for comparison<br />

purposes<br />

Results<br />

According to achieved characteristics we read out or calculated<br />

typical parameters which describe <strong>the</strong> performance <strong>of</strong> cells. The<br />

nominal parameters <strong>of</strong> solar cells manufactured in two stages<br />

were presented in Table.<br />

To define <strong>the</strong> base improvement we created two bulk heterojunctions<br />

i.e. PIF:PCBM (1:1) and PIF:PCBM (2:1). It turned<br />

out that increased amount <strong>of</strong> PIF in blend deteriorates <strong>the</strong> performance<br />

<strong>of</strong> <strong>the</strong> cell because <strong>of</strong> insufficient amount <strong>of</strong> electronacceptor<br />

compound. Taking that factors into account we came<br />

to a conclusion that <strong>the</strong>re is a particular need to apply additional<br />

compound with negative character <strong>of</strong> conductivity such as TCNQ.<br />

Photoinduced current density/intensity is supposed to be consider<br />

as <strong>the</strong> most crucial parameter <strong>of</strong> all solar cells. Insertion <strong>of</strong><br />

TCNQ to <strong>the</strong> polymer/fullerene matrix produces <strong>the</strong> short circuit<br />

current improvement. Although <strong>the</strong> degree <strong>of</strong> that improvement is<br />

ra<strong>the</strong>r poor we can conclude that TCNQ increases <strong>the</strong> efficiency<br />

<strong>of</strong> charge transfer between constituent phases and causes significant<br />

extending <strong>of</strong> absorption spectrum up to 900 nm. Despite<br />

<strong>the</strong> current growth process it is not possible that TCQN improve<br />

<strong>the</strong> conductivity <strong>of</strong> percolation paths. External quantum and power<br />

conversion efficiencies growth for PIF:PCBM:TCNQ (2:2:1)<br />

are mainly due to <strong>the</strong> extended absorption spectrum but deterioration<br />

<strong>of</strong> open circuit voltage is a result <strong>of</strong> application ytterbium<br />

as a cathode which has lower work function than aluminum.<br />

10<br />

P3HT:PCBM<br />

PIF:PCBM:TCNQ<br />

1<br />

0<br />

P3HT:PCBM<br />

EQE (%)<br />

1<br />

0,1<br />

0,01<br />

Current density (mA/cm 2 )<br />

-1<br />

-2<br />

-3<br />

-4<br />

1E-3<br />

400 500 600 700 800 900<br />

Wavelength (nm)<br />

-5<br />

-0,2 0,0 0,2 0,4 0,6 0,8 1,0<br />

Voltage (V)<br />

Fig. 9. Left: Absorption spectra <strong>of</strong> junctions in visible and near infrared part <strong>of</strong> spectrum: PIF:PCBM:TCNQ (2:2:1) and for comparison purposes<br />

P3HT:PCBM (1:0.8), Right: Current-voltage characteristic <strong>of</strong> loaded junction <strong>of</strong> P3HT:PCBM (1:0.8)<br />

124<br />

Elektronika 6/2012

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