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Proceedings of the European Summer School of Photovoltaics 4 – 7 ...

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a)<br />

a)<br />

b)<br />

b)<br />

c)<br />

c)<br />

Fig. 3. Dependence <strong>of</strong> resistance on firing time for silicon doped with<br />

phosphorus samples for defined measuring points: a) R1, b) R2, c) R3<br />

Fig. 4. Dependence <strong>of</strong> resistance on firing time for silicon doped with<br />

antimony samples for defined measuring points: a) R1, b) R2, c) R3<br />

Tabl. 2. Measurement results <strong>of</strong> silver nanopowder layers on alundum basis<br />

after firing in chamber furnace<br />

Firing<br />

temperature<br />

[ 0 C]<br />

Layer thickness<br />

after firing [µm]<br />

Path<br />

resistance<br />

[Ω]<br />

Resistance/□<br />

[mΩ/□]<br />

Resistivity<br />

[Ω∙m×10 -8 ]<br />

300 5 1,5 7,5 3,75<br />

300 5 1,5 7,5 3,75<br />

350 3 1,5 7,5 2,25<br />

Fig. 5. The scheme <strong>of</strong> a mask used for screen printing <strong>of</strong> silver<br />

nanopowder contacts on alundum basis<br />

350 3 1,4 7,0 2,10<br />

84<br />

Elektronika 6/2012

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