24.12.2014 Views

Set of supplementary notes.

Set of supplementary notes.

Set of supplementary notes.

SHOW MORE
SHOW LESS

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

Chapter 8<br />

Semiconductor devices<br />

We now consider the properties <strong>of</strong> inhomogeneous systems and devices. In this section we<br />

discuss the general properties <strong>of</strong> surfaces and interfaces between materials, and then the basic<br />

devices <strong>of</strong> bulk semiconductor physics. For bulk devices we will use the semiclassical approximation,<br />

treating electrons as classical particles obeying the Hamiltonian 1<br />

H = E n (k) − eφ(r) (8.1)<br />

with the momentum p = h¯k and a spatially varying potential φ(r). The potential will arise<br />

from externally applied fields, from charges induced by doping, and from changes in the material<br />

composition. When we discuss narrow quantum wells, we shall need to modify this<br />

approximation to quantise the levels.<br />

For an isolated solid in equilibrium, the energy difference between the chemical potential<br />

µ the vacuum level is the work function Φ. This is the energy required to remove an electron<br />

from the fermi level and place it in a state <strong>of</strong> zero kinetic energy in free space.<br />

Two different isolated materials with different work functions will then have different chemical<br />

potentials. If these two materials are placed in contact, their chemical potentials must<br />

equalise, and this is accomplished by electron flow to the more electronegative material; this<br />

material becomes charged, its potential φ changes, and an overall balance will be established.<br />

But in general, there will be as a result internal, inhomogeneous electric fields.<br />

8.1 Metal - semiconductor contact<br />

The figure Fig. 8.1 is a schematic <strong>of</strong> this process for an ideal metal placed in contact with<br />

a semiconductor. We consider the more interesting case when the chemical potential <strong>of</strong> the<br />

(doped) semiconductor is above that <strong>of</strong> the metal.<br />

8.1.1 Rectification by a metal contact<br />

The barrier set up between the metal and insulator inhibits current flow. An electron from<br />

the metal must either tunnel through the barrier (at low temperatures) or may be thermally<br />

1 We shall keep to the convention that e is a positive number, and therefore −eφ is the potential energy <strong>of</strong><br />

electrons in an electrostatic potential φ<br />

105

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!