Set of supplementary notes.
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Chapter 6<br />
Experimental probes <strong>of</strong> the band<br />
structure<br />
6.1 Optical transitions<br />
The band structure provides the excitation spectrum <strong>of</strong> the solid. The ground state <strong>of</strong> the<br />
system involves filling states up to the fermi energy, but we can also excite the system in<br />
different ways. One <strong>of</strong> the simplest is the absorption <strong>of</strong> a photon, which can be visualised as an<br />
excitation <strong>of</strong> an electron from an occupied state into an empty state, leaving behind a ”hole”<br />
in the valence band. See Fig. 6.1.<br />
Figure 6.1: Direct absorption by light is a nearly vertical transition since the wavevector <strong>of</strong> a<br />
photon with energy <strong>of</strong> order a semiconductor gap is much smaller than the typical momentum <strong>of</strong><br />
an electron. (a) In a direct gap semiconductor, such as GaAs, the lowest energy available states<br />
for hole and electron are at the same momentum, and the optical threshold is at the vertical<br />
energy gap. (b) IN an indirect gap material (e.g. Si or Ge), the minimum energy excitation<br />
<strong>of</strong> electron and hole pair connects state <strong>of</strong> different momenta - and a phonon <strong>of</strong> momentum q<br />
must be excited concurrently with the photon.<br />
The minimum gap in a semiconductor is the energy difference between the highest occupied<br />
state and the lowest unoccupied state, and this is the threshold for optical absorption (neglecting<br />
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