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70 CHAPTER 4. ELECTRONIC STRUCTURE<br />

It is now fairly clear how to extend this method to multiple orbitals per unit cell. We simply<br />

generalise the summation in (4.30):<br />

|ψ〉 = ∑ e ikRn c (ν) ∣ 〉 k n<br />

(ν)<br />

, (4.32)<br />

n,ν<br />

where the index ν labels the different local orbitals ∣ ∣ n<br />

(ν) 〉 , which exist in the n’th unit cell, and<br />

is the associated coefficient, which determines to what level this local orbital is mixed into<br />

the final state. This choice <strong>of</strong> Bloch state will give rise to an eigenvector/eigenvalue problem, in<br />

which the number <strong>of</strong> energy eigenvalues at a particular wavevector k, and thereby the number<br />

<strong>of</strong> bands, is equal to the number <strong>of</strong> local orbitals chosen per unit cell.<br />

c (ν)<br />

k<br />

4.4.4 Tight binding vs. Nearly Free Electron approximation<br />

Fundamentally, both the tight binding and the nearly free electron method do the same thing:<br />

a Bloch state is constructed from a set <strong>of</strong> basis functions, and the associated coefficients are<br />

determined by solving the eigenvector/eigenvalue equation which arises, when the Hamiltonian<br />

is expressed in that basis. If the basis is complete, then the Bloch state is an exact eigenstate<br />

<strong>of</strong> the Hamiltonian. However, a complete basis would give an infinite-dimensional eigenvector<br />

problem, so the expansion <strong>of</strong> the Bloch state is done within a reduced basis set.<br />

In the case <strong>of</strong> the nearly free electron approximation, the complete basis set required to form<br />

|ψ k 〉 is the set <strong>of</strong> all plane wave states |k − G〉 (eigenstates to the kinetic energy operator), but<br />

we can restrict this by concentrating on those states for which the matrix elements V G are large<br />

and which are nearly degenerate with |k〉. If the periodic potential is comparatively smoothly<br />

varying and weak (compared to the kinetic energy), then we can disregard Fourier components<br />

V G with high wavevector G, and the set <strong>of</strong> basis functions is small. In this case, the nearly free<br />

electron approximation is computationally efficient.<br />

If, on the other hand, the periodic potential varies strongly compared to the kinetic energy,<br />

then the plane wave expansion has to include a much larger set <strong>of</strong> states. In this case, the<br />

free electron approximation is less useful, and the tight binding approximation may be more<br />

appropriate. In the tight binding approximation (or linear combination <strong>of</strong> atomic orbitals), the<br />

eigenstates <strong>of</strong> the local Hamiltonians Ĥ(0) n , i.e. the set <strong>of</strong> all atomic orbitals associated with<br />

the different unit cells n, form a complete basis in which the Bloch states can be expanded.<br />

Section 4.4.3 showed that the number <strong>of</strong> bands generated in this method is equal to the number<br />

<strong>of</strong> atomic orbitals included per unit cell. If the hopping matrix elements are small compared<br />

to the separation between the bands, then the bands generated from different sets <strong>of</strong> atomic<br />

orbitals do not cross. In this case, the strength <strong>of</strong> the potential – which fixes the energies <strong>of</strong><br />

the atomic orbitals and also their spacing – is larger than the kinetic energy – which is related<br />

to the bandwidth. To get a good description <strong>of</strong> a particular electronic band only a small set <strong>of</strong><br />

atomic orbitals needs to be included.<br />

In short, in the nearly free electron scheme the kinetic energy appears on the diagonal <strong>of</strong><br />

energy matrix in the eigenvector equation, and the potential appears in the <strong>of</strong>f-diagonal terms,<br />

mixing basis states together. This is efficient, if the periodic potential is a weak perturbation.<br />

In the tight binding scheme, conversely, the potential energy appears on the diagonal and the<br />

hopping elements, which are the equivalent <strong>of</strong> the kinetic energy, form the <strong>of</strong>f-diagonal terms.<br />

This works best, if the potential is strong compared to the kinetic energy.

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