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Direct Energy, 2018a

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94 5.2 Physics of the Hall Eect<br />

The electric eld intensity can be expressed as a function of the voltage<br />

V AB measured across the width of the device, in the â y direction.<br />

−→ E =<br />

V AB<br />

w ây (5.5)<br />

q −→ E = −q −→ v × −→ B (5.6)<br />

V AB<br />

w = v xB z (5.7)<br />

While the magnitude of the velocity of the charges v x is often not known,<br />

the applied current, I x , in units amperes, is known. The current density<br />

through a cross section of the device is the product of the charge concentration,<br />

the strength of the charges, and the velocity of the charges.<br />

current density =<br />

I x<br />

w·d thick<br />

= q · v x · p (5.8)<br />

Fromthe above expression, velocity can be expressed in terms of the current.<br />

I x<br />

v x =<br />

(5.9)<br />

w · d thick · q · p<br />

Equations 5.7 and 5.9 can be combined.<br />

V AB =<br />

w · I x · B z<br />

(5.10)<br />

w · d thick · q · p<br />

A magnetometer is a device that measures magnetic eld. To use a<br />

Hall eect device as a magnetometer, start with a piece of semiconductor<br />

of known dimensions and known charge concentration, and then apply a<br />

current. If the voltage perpendicular to the current is measured, the magnetic<br />

eld can be calculated. The measured voltage is proportional to the<br />

strength of the external magnetic ux density.<br />

B z = d thick · q · p · V AB<br />

(5.11)<br />

I x<br />

Voltage is easily measured with a voltmeter, so no specialized tools are<br />

needed. To reliably measure this voltage, it is often amplied.<br />

Alternatively, if the strength of an external magnetic eld is known, the<br />

Hall eect can be used to measure the concentrations of holes or electrons<br />

in a piece of semiconductor. With some algebra, we can write the hole concentration<br />

as a function of the dimensions of the semiconductor, the known<br />

magnetic eld strength, the applied current, and the measured voltage.<br />

p =<br />

I x · B z<br />

d thick · q · V AB<br />

(5.12)

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