Numonyxâ„¢ Wireless Flash Memory (W30)

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6.0 Electrical Specifications 6.1 DC Current Characteristics Table 9: DC Current Characteristics (Sheet 1 of 2) Sym Parameter (1) Note 32/64 Mbit V CCQ = 3.0 V 128 Mbit Typ Max Typ Max I LI Input Load 9 - ±2 - ±2 µA I LO 180 nm I CCS 130 nm ICCS 180 nm ICCAPS 130 nm I CCAPS I CCR Output Leakage Numonyx Wireless Flash Memory (W30) (W30) Datasheet November 2007 26 Order Number: 290702-13 Uni t DQ[15:0] - ±10 - ±10 µA V CC Standby 10 APS 11 Average V CC Read Asynchronous Page Mode f=13 MHz Synchronous CLK = 40 MHz I CCW V CC Program 3,4,5 I CCE V CC Block Erase 3,4,5 6 21 6 30 8 50 8 70 6 21 6 30 8 50 8 70 µA µA V CC = V CC Max V CCQ = V CCQMax V IN = V CCQ or GND V CC = V CC Max V CCQ = V CCQMax V IN = V CCQ or GND V CC = V CCMax V CCQ = V CCQ Max CE# = V CCQ RST# =V CCQ 2 4 7 4 10 mA 4 Word Read 2 Test Conditions V CC = V CC Max V CCQ = V CCQ Max CE# = V SSQ RST# =V CCQ All other inputs =V CCQ or V SSQ 7 15 7 15 mA Burst length = 4 9 16 9 16 mA Burst length = 8 11 19 11 19 mA Burst length =16 12 22 12 22 mA Burst length = Continuous V CC = V CC Max CE# = V IL OE# = V IH Inputs = V IH or V IL 18 40 18 40 mA V PP = V PPL, Program in Progress 8 15 8 15 mA V PP = V PPH, Program in Progress 18 40 18 40 mA V PP = V PPL, Block Erase in Progress 8 15 8 15 mA V PP = V PPH, Block Erase in Progress I CCWS V CC Program Suspend 6 6 21 6 30 µA CE# = V CC, Program Suspended I CCES V CC Erase Suspend 6 6 21 6 30 µA CE# = V CC, Erase Suspended I PPS (I PPWS, I PPES ) V PP Standby V PP Program Suspend V PP Erase Suspend 3 0.2 5 0.2 5 µA V PP < V CC I PPR V PP Read - 2 15 2 15 µA V PP < V CC I PPW V PP Program 4 0.05 0.10 0.05 0.10 VPP = VPPL, Program in Progress mA 8 22 16 37 VPP = VPPH, Program in Progress
Numonyx Wireless Flash Memory (W30) Table 9: DC Current Characteristics (Sheet 2 of 2) Sym Parameter (1) IPPE Notes: VPP Erase 4 0.05 8 0.10 22 0.05 8 0.10 22 mA VPP = VPPL, Erase in Progress VPP = VPPH, Erase in Progress 1. 2. All currents are RMS unless noted. Typical values at typical VCC , TA = +25°C. Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation. See ICCRQ specification for details. 3. Sampled, not 100% tested. 4. 5. 6. 7. 8. 9. 10. 11. VCC read + program current is the sum of VCC read and VCC program currents. VCC read + erase current is the sum of VCC read and VCC erase currents. ICCES is specified with the flash device deselected. If the flash device is read while in erase suspend, the current is ICCES plus ICCR . VPP < VPPLK inhibits erase and program operations. Do not use VPPL and VPPH outside their valid ranges. VIL can undershoot to –0.4V and VIH can overshoot to VCCQ +0.4V for durations of 20 ns or less. If VIN>VCC the input load current increases to 10 µA max. ICCS is the average current measured over any 5ms time interval 5 µs after a CE# de-assertion. Refer to section Section 8.2, “Automatic Power Savings (APS)” on page 44 for ICCAPS measurement details. 6.2 DC Voltage Characteristics Table 10: DC Voltage Characteristics Sym Parameter (1) Note V CCQ= 3.0 V 32/64 Mbit 128 Mbit Min Max Min Max V IL Input Low 8 0 0.4 0 0.4 V V IH Input High - V OL V OH Output Low Output High V CCQ – 0.4 V CCQ Unit Test Conditions November 2007 Datasheet Order Number: 290702-13 27 V CCQ – 0.4 V CCQ - - 0.1 - 0.1 V - Note V CCQ – 0.1 32/64 Mbit V CCQ= 3.0 V - 128 Mbit Typ Max Typ Max V CCQ – 0.1 V - V V PPLK V PP Lock-Out 7 - 0.4 - 0.4 V V CC = V CC Min V CCQ = V CCQ Min I OL = 100 µA V CC = V CC Min V CCQ = V CCQMin I OH = –100 µA VLKO VCC Lock - 1.0 - 1.0 - V VILKOQ VCCQ Lock - 0.9 - 0.9 - V Note: For all numbered note references in this table, refer to the notes in Table 9, “DC Current Characteristics” on page 26. Uni t Test Conditions
Page 2 and 3: Legal Lines and Disclaimers INFORMA
Page 4 and 5: Numonyx Wireless Flash Memory (W30)
Page 6 and 7: Date of Revision 11/17/03 -008 Vers
Page 8 and 9: • RWE - Read-While-Erase • RWW
Page 12 and 13: Table 2: Top Parameter Memory Map M
Page 14 and 15: Figure 2: 32Mb, 64Mb and 128Mb QUAD
Page 16 and 17: Figure 4: 32Mb VF BGA Package Drawi
Page 18 and 19: 4.0 Ballout and Signal Descriptions
Page 20 and 21: 4.2 Signal Descriptions Numonyx Wir
Page 22 and 23: Table 6: Signal Descriptions - QUAD
Page 28 and 29: 7.0 AC Characteristics 7.1 Read Ope
Page 30 and 31: Table 12: Read Operations - 180 nm
Page 32 and 33: Figure 9: Latched Asynchronous Read
Page 34 and 35: Figure 11: Single Synchronous Read-
Page 38 and 39: Figure 15: Burst Suspend CLK Addres
Page 40 and 41: Figure 16: Write Operations Wavefor
Page 42 and 43: Figure 19: Synchronous Read to Writ
Page 44 and 45: 8.0 Power and Reset Specifications
Page 46 and 47: 8.6 Reset Specifications Table 15:
Page 48 and 49: 9.0 Flash Device Operations Numonyx
Page 50 and 51: 9.1.4 Reset 9.1.5 Write Numonyx Wir
Page 52 and 53: Table 18: Command Codes and Descrip
Page 54 and 55: Figure 26: Interleaving a 2-Cycle W
Page 56 and 57: Table 20: Flash Device Identificati
Page 58 and 59: 10.5 Clear Status Register Numonyx
Page 60 and 61: Figure 28: Word Program Flowchart S
Page 62 and 63: 11.3.2 Setup Numonyx Wireless Flash
Page 64 and 65: Figure 29: Enhanced Factory Program
Page 72 and 73: Figure 33: Block Locking State Diag
Page 76 and 77:
Table 26: Simultaneous Operations A
Page 78 and 79:
Figure 36: Protection Register Lock
Page 80 and 81:
Table 28: Read Configuration Regist
Page 82 and 83:
Numonyx Wireless Flash Memory (W30)
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Page 86 and 87:
Appendix A Write State Machine Numo
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Page 90 and 91:
B.2 Query Structure Overview Numony
Page 92 and 93:
Table 37: System Interface Informat
Page 94 and 95:
B.6 Numonyx-Specific Extended Query
Page 96 and 97:
Table 43: Partition Region 1 Inform
Page 98 and 99:
Table 45: Partition and Erase-Block
Page 100 and 101:
Table 47: 48F Type Stacked Componen
Page 102:
Table 51: Parameter / Mux Configura
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Numonyxâ„¢ Wireless Flash Memory (W30)

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