Numonyxâ„¢ Wireless Flash Memory (W30)

Numonyx Wireless Flash Memory (W30)
Table 13: AC Write Characteristics (Sheet 2 of 2)
# Sym Parameter 1,2
W14 t WHGL (t EHGL ) Write Recovery before Read - 0 - 0 - ns
W16 t WHQV WE# High to Valid Data
November 2007 Datasheet
Order Number: 290702-13 39
3,6,1
0
t AVQV
+ 40
-
t AVQV
+ 50
- ns
W18 tWHAV WE# High to Address Valid
3,9,1
0
0 - 0 - ns
W19 tWHCV WE# High to CLK Valid 3,10 20 - 20 - ns
W20
Notes:
tWHVH WE# High to ADV# High 3,10 20 - 20 - ns
1. Write timing characteristics during erase suspend are the same as during write-only operations.
2. A write operation can be terminated with either CE# or WE#.
3. Sampled, not 100% tested.
4.
5.
6.
Write pulse width low (tWLWH or tELEH ) is defined from CE# or WE# low (whichever occurs last) to CE# or WE# high
(whichever occurs first). Hence, tWLWH = tELEH = tWLEH = tELWH .
Write pulse width high (tWHWL or tEHEL) is defined from CE# or WE# high (whichever is first) to CE# or WE# low
(whichever is last). Hence, tWHWL = tEHEL = tWHEL = tEHWL .
System designers must take this into account, and can insert a software No-Op instruction to delay the first read after
issuing a command.
7. For commands other than resume commands.
8.
9.
VPP must be held at VPPL or VPPH until block erase or program success is determined.
Applicable during asynchronous reads following a write.
10. tWHCH/L OR tWHVH must be met when transitioning from a write cycle to a synchronous burst read. tWHCH/L and tWHVH both refer to the address latching event (either the rising/falling clock edge or the rising ADV# edge, whichever occurs
first).
Notes
32-Mbit
64-Mbit
128-Mbit
-70 -85 / -90
Min Max Min Max
Unit