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Table 37: System Interface Information<br />
Numonyx <strong>Wireless</strong> <strong>Flash</strong> <strong>Memory</strong> (<strong>W30</strong>) (<strong>W30</strong>)<br />
Offset Length Description<br />
Add.<br />
Hex<br />
Code Value<br />
1Bh 1 1B: --17 1.7V<br />
1Ch 1 1C: --19 1.9V<br />
1Dh 1 1D: --B4 11.4V<br />
1Eh 1 1E: --C6 12.6V<br />
1Fh 1 “n” such that typical single word program time-out = 2 n μ-sec 1F: --04 16μs<br />
20h 1 “n” such that typical max. buffer write time-out = 2 n μ-sec 20: --00 NA<br />
21h 1 “n” such that typical block erase time-out = 2 n m-sec 21: --0A 1s<br />
22h 1 “n” such that typical full chip erase time-out = 2 n m-sec 22: --00 NA<br />
23h 1 “n” such that maximum word program time-out = 2 n times typical 23: --04 256μs<br />
24h 1 “n” such that maximum buffer write time-out = 2 n times typical 24: --00 NA<br />
25h 1 “n” such that maximum block erase time-out = 2 n times typical 25: --03 8s<br />
26h 1 “n” such that maximum chip erase time-out = 2 n VCC logic supply minimum program/erase voltage<br />
bits 0–3 BCD 100 mV<br />
bits 4–7 BCD volts<br />
VCC logic supply maximum program/erase voltage<br />
bits 0–3 BCD 100 mV<br />
bits 4–7 BCD volts<br />
VPP [programming] supply minimum program/erase voltage<br />
bits 0–3 BCD 100 mV<br />
bits 4–7 HEX volts<br />
VPP [programming] supply maximum program/erase voltage<br />
bits 0–3 BCD 100 mV<br />
bits 4–7 HEX volts<br />
times typical 26: --00 NA<br />
Datasheet November 2007<br />
92 Order Number: 290702-13
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