Numonyxâ„¢ Wireless Flash Memory (W30)

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B.6 Numonyx-Specific Extended Query Table Table 39: Primary Vendor-Specific Extended Query Numonyx Wireless Flash Memory (W30) (W30) Offset (1) Length Description Hex P = 39h (Optional flash features and commands) Add. Code Value (P+0)h 3 Primary extended query table 39: --50 "P" (P+1)h Unique ASCII string “PRI“ 3A: --52 "R" (P+2)h 3B: --49 "I" (P+3)h 1 Major version number, ASCII 3C: --31 "1" (P+4)h 1 Minor version number, ASCII 3D: --33 "3" (P+5)h 4 Optional feature and command support (1=yes, 0=no) 3E: --E6 (P+6)h bits 10–31 are reserved; undefined bits are “0.” If bit 31 is 3F: --03 (P+7)h “1” then another 31 bit field of Optional features follows at 40: --00 (P+8)h the end of the bit–30 field. 41: --00 bit 0 Chip erase supported bit 0 = 0 No bit 1 Suspend erase supported bit 1 = 1 Yes bit 2 Suspend program supported bit 2 = 1 Yes bit 3 Legacy lock/unlock supported bit 3 = 0 No bit 4 Queued erase supported bit 4 = 0 No bit 5 Instant individual block locking supported bit 5 = 1 Yes bit 6 Protection bits supported bit 6 = 1 Yes bit 7 Pagemode read supported bit 7 = 1 Yes bit 8 Synchronous read supported bit 8 = 1 Yes bit 9 Simultaneous operations supported bit 9 = 1 Yes (P+9)h 1 Supported functions after suspend: read Array, Status, Query Other supported operations are: bits 1–7 reserved; undefined bits are “0” 42: --01 bit 0 Program supported after erase suspend bit 0 = 1 Yes (P+A)h 2 Block status register mask 43: --03 (P+B)h bits 2–15 are Reserved; undefined bits are “0” 44: --00 bit 0 Block Lock-Bit Status register active bit 0 = 1 Yes bit 1 Block Lock-Down Bit Status active bit 1 = 1 Yes (P+C)h 1 VCC logic supply highest performance program/erase voltage bits 0–3 BCD value in 100 mV bits 4–7 BCD value in volts 45: --18 1.8V (P+D)h 1 VPP optimum program/erase supply voltage bits 0–3 BCD value in 100 mV bits 4–7 HEX value in volts 46: --C0 12.0V Datasheet November 2007 94 Order Number: 290702-13
Numonyx Wireless Flash Memory (W30) Table 40: Protection Register Information Offset (1) P = 39h (P+E)h 1 (P+F)h (P+10)h (P+11)h (P+12)h Length Description (Optional flash device features and commands) Add. 4 Number of Protection register fields in JEDEC ID space. 00h indicates that 256 protection fields are available Protection Field 1: Protection Description This field describes user-available One Time Programmable (OTP) Protection register bytes. • Some bytes are pre-programmed with flash device-unique serial numbers. • Other bytes are user programmable. Bits 0-15 point to the Protection register Lock byte, the first byte in the section. The following bytes are factory pre-programmed and userprogrammable. • bits 0--7 = Lock/bytes Jedec-plane physical low address • bits 8--15 = Lock/bytes Jedec-plane physical high address • bits 16--23 = n such that 2n = factory pre-programmed bytes • bits 24--31 =n such that 2n = user programmable bytes Table 41: Burst Read Information for Non-Multiplexed Flash Device Table 42: Partition and Erase-Block Region Information Hex Code 47: --01 1 November 2007 Datasheet Order Number: 290702-13 95 48: 49: 4A: 4B: --80 --00 --03 --03 Value 80h 00h 8 byte 8 byte Offset (1) Length Description Hex P = 39h (Optional flash features and commands) Add. Code Value (P+13)h 1 Page Mode Read capability bits 0–7 = “n” such that 2 4C: --03 8 byte (P+14)h 1 4D: --04 4 (P+15)h 1 4E: --01 4 (P+16)h 1 Synchronous mode read capability configuration 2 4F: --02 8 (P+17)h 1 Synchronous mode read capability configuration 3 50: --03 16 (P+18)h 1 Synchronous mode read capability configuration 4 51: --07 Cont n HEX value represents the number of read-page bytes. See offset 28h for device word width to determine page-mode data output width. 00h indicates no read page buffer. Number of synchronous mode read configuration fields that follow. 00h indicates no burst capability. Synchronous mode read capability configuration 1 Bits 3–7 = Reserved bits 0–2 “n” such that 2 n+1 HEX value represents the maximum number of continuous synchronous reads when the device is configured for its maximum word width. A value of 07h indicates that the device is capable of continuous linear bursts that will output data until the internal burst counter reaches the end of the device’s burstable address space. This field’s 3-bit value can be written directly to the Read Configuration Register bits 0–2 if the device is configured for its maximum word width. See offset 28h for word width to determine the burst data output width. Offset (1) See table below P = 39h Description Address Bottom Top (Optional flash features and commands) Len Bot Top (P+19)h (P+19)h Number of device hardware-partition regions within the device. x = 0: a single hardware partition device (no fields follow). x specifies the number of device partition regions containing one or more contiguous erase block regions. 1 52: 52:
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Legal Lines and Disclaimers INFORMA
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Numonyx Wireless Flash Memory (W30)
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Date of Revision 11/17/03 -008 Vers
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• RWE - Read-While-Erase • RWW
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Table 2: Top Parameter Memory Map M
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Figure 2: 32Mb, 64Mb and 128Mb QUAD
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Figure 4: 32Mb VF BGA Package Drawi
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4.0 Ballout and Signal Descriptions
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4.2 Signal Descriptions Numonyx Wir
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Table 6: Signal Descriptions - QUAD
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6.0 Electrical Specifications 6.1 D
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7.0 AC Characteristics 7.1 Read Ope
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Table 12: Read Operations - 180 nm
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Figure 9: Latched Asynchronous Read
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Figure 11: Single Synchronous Read-
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Figure 15: Burst Suspend CLK Addres
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Figure 16: Write Operations Wavefor
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Figure 19: Synchronous Read to Writ
Page 44 and 45: 8.0 Power and Reset Specifications
Page 46 and 47: 8.6 Reset Specifications Table 15:
Page 48 and 49: 9.0 Flash Device Operations Numonyx
Page 50 and 51: 9.1.4 Reset 9.1.5 Write Numonyx Wir
Page 52 and 53: Table 18: Command Codes and Descrip
Page 54 and 55: Figure 26: Interleaving a 2-Cycle W
Page 56 and 57: Table 20: Flash Device Identificati
Page 58 and 59: 10.5 Clear Status Register Numonyx
Page 60 and 61: Figure 28: Word Program Flowchart S
Page 62 and 63: 11.3.2 Setup Numonyx Wireless Flash
Page 64 and 65: Figure 29: Enhanced Factory Program
Page 66 and 67: Numonyx Wireless Flash Memory (W30)
Page 72 and 73: Figure 33: Block Locking State Diag
Page 76 and 77: Table 26: Simultaneous Operations A
Page 78 and 79: Figure 36: Protection Register Lock
Page 80 and 81: Table 28: Read Configuration Regist
Page 86 and 87: Appendix A Write State Machine Numo
Page 90 and 91: B.2 Query Structure Overview Numony
Page 92 and 93: Table 37: System Interface Informat
Page 96 and 97: Table 43: Partition Region 1 Inform
Page 98 and 99: Table 45: Partition and Erase-Block
Page 100 and 101: Table 47: 48F Type Stacked Componen
Page 102: Table 51: Parameter / Mux Configura
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Numonyxâ„¢ Wireless Flash Memory (W30)

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