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Nanotechnology-Enabled Sensors

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116 Chapter 3: Transduction Platforms<br />

The first FET sensors were developed in early 1970 at the Stanford University<br />

by Wise et al. 27 Fig. 3.41 shows one of the original design drawings.<br />

25 They used the device for the measurement of pH. As the device is<br />

very sensitive to the presence of ions in the analyte, for measuring the redox<br />

interactions on the sensitive layer a reference electrode is also needed.<br />

A MOSFET incorporating a reference electrode is called an ion-sensitive<br />

field effect transistor (ISFET). 26 Hence, the incorporation of a reference<br />

electrode is deemed necessary to make an electrochemically sensitive<br />

device.<br />

Fig. 3.41 One of the ISFETs original design drawings. Reprinted with permission<br />

from Elsevier publications. 25,27<br />

For ISFET the equation for the threshold voltage changes to: 25,26<br />

φ Q + Q + Q<br />

= , (3.82)<br />

sol s ox ss b<br />

Vt Eref<br />

−ψ<br />

+ χ + −<br />

+ 2φ<br />

f<br />

q Cox<br />

There are two new parameters that can be seen in this equation: the interfacial<br />

potential, Eref, and the potential at the solution/oxide interface, and<br />

ψ+χ sol . The term ψ+χ sol consists of ψ, which is a function of the analyte’s

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