Nanotechnology-Enabled Sensors

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6.7 Magnetically Engineered Spintronic Sensors 359 Fig. 6.49 GMR results from interfacial spin-polarized scattering between ferromagnets separated by conducting spacers in a heterogeneous magnetic material, such as a magnetic multilayer or granular alloy. Reprinted with permission from the IEEE publications. 115 As was mentioned previously, one of the largest GMR effects at room temperature is approximately 100%, which has been found in sputter deposited Co/Cu multilayers. 122 The thinner the magnetic and nonmagnetic layers are the larger the GMR effect will be as the GMR effect is dominated by spin-dependent scattering at magnetic/nonmagnetic interfaces. 123 Thickening these layers largely results in shunting of current away from the interfacial regions. 124 Manganese oxides with a perovskite structure exhibit a transition between a paramagnetic insulating phase and a ferromagnetic metal phase. 125 Colossal magnetoresistance (CMR) is associated with this transition which was reported by Jin et al in 1993-1994. 126 In the vicinity of the transition temperature, such materials exhibit a large change in resistance in response to an applied magnetic field. CMR has not been explained by any current physical theories and is currently the focus of ongoing research. CMR
360 Chapter 6: Inorganic Nanotechnology Enabled Sensors materials are able to demonstrate resistance changes by several orders of magnitude. 6.7.2 Spin Valves A spin valve is a GMR-based device (Fig. 6.50). A typical spin valve may contain two ferromagnetic layers (e.g. alloys of nickel, iron, and cobalt) sandwiching a thin nonmagnetic metal (usually copper). 114 In such a structure one of the two magnetic layers is relatively insensitive to moderate magnetic fields while magnetization of the other magnetic layer can be changed by application of a relatively small magnetic field. An antiferromagnetic layer is also in intimate contact with the insensitive magnetic layer. As the magnetizations in the two layers change from parallel to antiparallel alignment, the resistance of the spin valve rises typically from 5 to 10%. There are other ways of forming a spin-valve. The insensitive magnetic layer can be replaced with a synthetic antiferromagnet which consists of two magnetic layers separated by a very thin (~10 Å) nonmagnetic conductor, such as ruthenium. 118 The magnetizations in the two magnetic layers are strongly antiparallel coupled. As a result, they are also effectively immune to outside magnetic fields. This structure improves both stand-off magnetic fields and the operational temperature of the spin valve. Another method of constructing a spin valve is by using a nano-oxide layer formed at the outside surface of the soft magnetic film. This layer reduces resistance due to surface scattering, thereby increasing the percentage change in magnetoresistance. 127
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Nanotechnology-Enabled Sensors
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Kourosh Kalantar-zadeh RMIT Univers
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Acknowledgments We have been fortun
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viii Contents Chapter 3: Transducti
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x Contents 5.7.1 Scanning Electron
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xii Contents 7.5 Nano-sensors based
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2 Chapter 1: Introduction Nobel lau
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4 Chapter 1: Introduction Fig. 1.2
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6 Chapter 1: Introduction ensure th
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8 Chapter 1: Introduction ments, th
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10 Chapter 1: Introduction aim is t
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12 Chapter 1: Introduction Referenc
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14 Chapter 2: Sensor Characteristic
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64 Chapter 3: Transduction Platform
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136 Chapter 4: Nano Fabrication and
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212 Chapter 5: Characterization Tec
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Chapter 6: Inorganic Nanotechnology
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6.2 Density and Number of States 28
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2 6.2 Density and Number of States
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6.3 Gas Sensing with Nanostructured
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6.3 Gas Sensing with Nanostructured
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7.4 Proteins in Nanotechnology Enab
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7.4.4 Using Proteins as Nanodevices
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Fig. 7.36 The general structure of
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+ 7.4 Proteins in Nanotechnology En
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7.5 Nano-sensors based on Nucleotid
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Fig. 7.57 The structure of DNA stra
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7.6 Sensors Based on Molecules with
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7.6 Sensors Based on Molecules with
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7.8 Biomagnetic Sensors 7.8 Biomagn
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7.9 Summary 471 metal oxides, carbo
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References 473 19 T. Kunitake, Ange
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63 J. X. Huang, S. Virji, B. H. Wei
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References 477 105 M. Plomer, G. G.
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References 479 145 R. F. Service, S
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7.8 References 481 185 J. Wang, D.
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Remote plasma enhanced CVD (RPECVD)
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Thin film equivalent circuit ... 32
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Optical waveguides ................
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About the Authors Dr. Kourosh Kalan
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Nanotechnology-Enabled Sensors

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