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Nanotechnology-Enabled Sensors

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6.2 Density and Number of States 295<br />

Obviously, the Fig. 6.5 graphs can be utilized to visualize how the properties<br />

of nanomaterials can be quantized when the dimensions of a material<br />

are reduced to quantum sizes.<br />

For instance, the conductance of a 1D structure can be derived from the<br />

DOS. In a 1D structure (such as a nanowire) with a length of L, if a potential<br />

equal to V is applied, for a mobile electron the energy difference (ΔE)<br />

between two sides of this 1D structure is equal to:<br />

ΔE = eV/L. (6.27)<br />

where e is an electron charge. Now, if q is charge (equal to –e for an electron),<br />

and v is the velocity, the net current, I, flowing through the channel<br />

will be:<br />

I = N(E)qv = D(E)ΔE qv, (6.28)<br />

where D(E) and N(E) are the density of states and the number of states in a<br />

1D case, respectively, for which D(E) was presented by Eq. (6.24). Replacing<br />

vi which is the velocity of an electron from Eq. (6.1) in sub-band i<br />

the DOS can be obtained as: 3<br />

D(<br />

E)<br />

1 D<br />

L ⎛ m ⎞<br />

dE = ⎜ ⎟ 2 π ⎝ � ⎠<br />

1/<br />

2<br />

⎛<br />

⎜<br />

1<br />

⎜<br />

⎝ ( E − Ei<br />

)<br />

1/<br />

2<br />

⎞<br />

⎟<br />

4L<br />

⎟<br />

= , (6.29)<br />

⎠ hvi<br />

where Ei is the energy in each sub-band and m is the mass for an electron.<br />

From Eqs. (6.28) and (6.29) we can obtain the equation defining current, I,<br />

as:<br />

I = 2e 2 V/h. (6.30)<br />

Interestingly, Eq. (6.30) shows that in a 1D structure, the current only<br />

depends on the voltage across it via fundamental constants. Consequently,<br />

the two-terminal resistance is calculated to be 12.906 kΩ for such a 1D<br />

structure.<br />

As can be observed, an ideal 1D structure has a finite resistance. This is<br />

called a resistance quantum (or the inverse conductance quantum). Such a<br />

resistance can also be experimentally measured. At the end of the 1980s,<br />

the University of Cambridge and Delft groups reported the measurements<br />

of steps in the conductance of a quasi 1D configuration in a field effect<br />

transistor structure by means of the voltage applied at the gate as shown in<br />

Fig. 6.6. 4,5<br />

All the above assumptions are for near zero degree Kelvin temperatures.<br />

At higher temperatures a thermal effect also appears which smoothes out<br />

the step shape.

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