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Nanotechnology-Enabled Sensors

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204 Chapter 4: Nano Fabrication and Patterning Techniques<br />

Bosch Company which first developed the method. The DRIE involves alternating<br />

different gas compositions during etching.<br />

In the Bosch process initially a sample with a patterned surface is placed<br />

in the chamber. Once inside, the following steps are carried out: (a) A<br />

highly reactive gas is introduced to the chamber, which isotropically etches<br />

the substrate for just a few seconds, (b) a polymeric passivation layer is<br />

then conformally deposited over the whole surface which generally takes a<br />

few seconds, (c) through the sputtering process, ions remove the passivation<br />

layer from the bottom of the previously etched trench, but not from<br />

the sides, (d) the process is then iteratively repeated, starting with the introduction<br />

of the highly reactive gas. This time, the sidewalls are covered<br />

by the passivation layer, so introducing the reactive gas, for a short period,<br />

ensures that only the bottom of the trench will be etched. Continuing these<br />

steps several times allows high aspect ration structures to be obtained, and<br />

therefore etching is preferential in the vertical direction. 97,98 Such high aspect<br />

ratio structures are very useful in the fabrication of devices such as<br />

sensors, actuators, micro-fluidic systems, and scanning probe tips.<br />

Another dry etching method is sputter etching. It is very similar in principle<br />

to the sputtering deposition process that was described previously in<br />

this chapter. However, the difference is that in this process, the substrate is<br />

now subjected to the ion bombardment instead of the target material.<br />

Vapor phase etching is another dry etching method. The sample to be<br />

etched is placed inside a chamber in which gases are subsequently introduced<br />

and the gas molecules chemically react with the surface of the sample.<br />

The two most common vapor phase etching technologies are silicon<br />

dioxide etching using hydrogen fluoride (HF) and silicon etching using<br />

xenon diflouride (XeF2). The byproducts condense on the surface and interfere<br />

with the etching process which have to be taken care of. 99<br />

4.10 Summary<br />

Different methods for the synthesis of nano-materials in the form of<br />

nano-particles, one-dimensional nanostructures, and nanostructured thin<br />

films were presented in this chapter. In addition, the most common techniques<br />

for the development of nano-resolution patterns were described.<br />

These methods and techniques are utilized for the fabrication of<br />

nanotechnology enabled sensors which will be presented in Chaps. 6 and<br />

7, with Chap. 6 focusing on inorganic sensors. The complementary methods<br />

which can be used for the development of organic nanomaterials for

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